FEP6DT-5410HE3/45

FEP(F,B)6AT thru FEP(F,B)6DT Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction ITO-220AB • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current 2 PIN 2 PIN 3 CASE 1 1 FEP6xT Series PIN 1 3 2 • High forward surge capability 3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) FEPF6xT Series PIN 1 • Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) PIN 2 PIN 3 TO-263AB K • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. 2 1 FEPB6xT Series PIN 1 K PIN 2 HEATSINK MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 6.0 A VRRM 50 V to 200 V IFSM 75 A trr 35 ns VF 0.975 V TJ max. 150 °C MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL FEP6AT FEP6BT FEP6CT FEP6DT UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current at TC = 105 °C IF(AV) 6.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 75 A TJ, TSTG - 55 to + 150 °C VAC 1500 V Operating storage and temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Document Number: 88598 Revision: 07-Nov-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 FEP(F,B)6AT thru FEP(F,B)6DT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode (1) 3.0 A TC = 25 °C TC = 100 °C Maximum DC reverse current at rated DC blocking voltage per diode SYMBOL FEP6AT FEP6BT FEP6CT FEP6DT UNIT VF 0.975 V IR 5.0 50 μA Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 35 ns Typical junction capacitance per diode 4.0 V, 1 MHz CJ 28 pF Note: (1) Pulse test: 300μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance from junction to case per diode SYMBOL FEP6 FEPF6 FEPB6 UNIT RTJC 3.6 5.1 3.6 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB FEP6DT-E3/45 1.81 45 50/tube Tube ITO-220AB FEPF6DT-E3/45 1.97 45 50/tube Tube TO-263AB FEPB6DT-E3/45 1.33 45 50/tube Tube TO-263AB FEPB6DT-E3/81 1.33 81 800/reel Tape and reel TO-220AB FEP6DTHE3/45 (1) 1.81 45 50/tube Tube ITO-220AB FEPF6DTHE3/45 (1) 1.97 45 50/tube Tube TO-263AB FEPB6DTHE3/45 (1) 1.33 45 50/tube Tube TO-263AB (1) 1.33 81 800/reel Tape and reel FEPB6DTHE3/81 Note: (1) Automotive grade AEC Q101 qualified www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88598 Revision: 07-Nov-07 FEP(F,B)6AT thru FEP(F,B)6DT Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Resistive or Inductive Load Instantaneous Reverse Leakage Current (μA) Average Forward Rectified Current (A) 10 8 6 4 2 TJ = 125 °C TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0 0 25 50 75 100 125 0 150 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Figure 1. Maximum Forward Current Derating Curve Figure 4. Typical Reverse Leakage Characteristics Per Diode 80 60 70 Junction Capacitance (pF) Peak Forward Surge Current (A) 10 60 50 40 30 20 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 50 40 30 20 10 10 0 0 1 10 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 5. Typical Junction Capacitance Per Diode Instantaneous Forward Current (A) 100 TJ = 125 °C 10 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 1 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Document Number: 88598 Revision: 07-Nov-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 FEP(F,B)6AT thru FEP(F,B)6DT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) PIN 2 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 3 7° REF. 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 7° REF. 0.076 (1.93) REF. 45° REF. 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88598 Revision: 07-Nov-07 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000