End of Life - FEPF16 Series - October 2021
FEP16xT, FEPB16xT
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Vishay General Semiconductor
Dual Common Cathode Ultrafast Plastic Rectifier
FEATURES
D2PAK (TO-263AB)
TO-220AB
• Power pack
• Glass passivated pellet chip junction
K
• Ultrafast recovery time
• Low switching losses, high efficiency
2
• High forward surge capability
1
3
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for TO-263AB package)
2
1
FEP16xT
• Solder dip 275 °C max. 10 s, per JESD 22-B106 for
TO-220AB package
FEPB16xT
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 2
K
• AEC-Q101 qualified available
HEATSINK
- Automotive ordering code: base P/NHE3
for D2PAK (TO-263AB package)
LINKS TO ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3D 3D
3D Models
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 8.0 A
VRRM
50 V to 600 V
IFSM
200 A, 125 A
trr
35 ns, 50 ns
MECHANICAL DATA
VF
0.95 V, 1.30 V, 1.50 V
TJ max.
150 °C
Package
TO-220AB, D2PAK (TO-263AB)
Circuit configurations
Common cathode
Case: TO-220AB, D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL FEP16AT FEP16BT FEP16CT FEP16DT FEP16FT FEP16GT FEP16HT FEP16JT UNIT
Maximum repetitive peak reverse
voltage
VRRM
50
Maximum RMS voltage
VRMS
Maximum DC blocking voltage
VDC
Maximum average forward
rectified current at TC = 100 °C
IF(AV)
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load per diode
IFSM
Operating storage and temperature
range
TJ, TSTG
-55 to +150
°C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
100
150
200
300
400
500
600
V
35
70
105
140
210
280
350
420
V
50
100
150
200
300
400
500
600
V
16
200
A
125
A
Revision: 06-May-2021
Document Number: 88596
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life - FEPF16 Series - October 2021
FEP16xT, FEPB16xT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage per diode
8.0 A
SYMBOL
FEP
16AT
VF (1)
FEP
16BT
FEP
16CT
FEP
16DT
0.95
FEP
16GT
FEP
16HT
1.30
TC = 25 °C
Maximum DC reverse
current per diode at rated DC
blocking voltage
FEP
16FT
FEP
16JT
1.50
UNIT
V
10
IR
TC = 100 °C
Maximum reverse recovery
time per diode
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
μA
500
35
50
85
ns
60
pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP
FEPF
FEPB
UNIT
RθJC
2.2
3.1
2.2
°C/W
Typical thermal resistance from junction to case per diode
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-220AB
FEP16JT-E3/45
PREFERRED P/N
1.85
45
50/tube
Tube
TO-263AB
FEPB16JT-E3/45
1.35
45
50/tube
Tube
TO-263AB
FEPB16JT-E3/81
1.35
81
800/reel
Tape and reel
Tube
(1)
DELIVERY MODE
TO-220AB
FEP16JTHE3/45
1.85
45
50/tube
TO-263AB
FEPB16JTHE3_A/P (1)
1.35
P
50/tube
Tube
TO-263AB
FEPB16JTHE3_A/I (1)
1.35
I
800/reel
Tape and reel
Note
(1) AEC-Q101 qualified
Revision: 06-May-2021
Document Number: 88596
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life - FEPF16 Series - October 2021
FEP16xT, FEPB16xT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
20
Instantaneous Reverse Leakage
Current (μA)
Average Forward Current (A)
Resistive or Inductive Load
16
12
8
4
0
10
1
TJ = 100 °C
TJ = 25 °C
0.1
0.01
0
50
100
0
150
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
300
1000
TC = 100 °C
8.3 ms Single Half Sine-Wave
250
200
150
100
50
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
50 V to 400 V
500 V to 600 V
Junction Capacitance (pF)
Peak Forward Surge Current (A)
TJ = 125 °C
50 V to 400 V
500 V to 600 V
100
10
0
1
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Instantaneous Forward Current (A)
100
TJ = 125 °C
10
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
1
50 V to 200 V
300 V to 400 V
500 V to 600 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Revision: 06-May-2021
Document Number: 88596
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life - FEPF16 Series - October 2021
FEP16xT, FEPB16xT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.415 (10.54) max.
0.370 (9.40)
0.360 (9.14)
TO-220AB
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
PIN
1 2 3
0.635 (16.13)
0.625 (15.87)
0.160 (4.06)
0.140 (3.56)
0.145 (3.68)
0.135 (3.43)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 06-May-2021
Document Number: 88596
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 09-Jul-2021
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Document Number: 91000