FEPB6BT-E3/45

FEP16xT, FEPF16xT, FEPB16xT www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Plastic Rectifier TO-220AB FEATURES ITO-220AB • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency 2 3 1 1 FEP16xT PIN 1 PIN 2 PIN 3 CASE 2 • High forward surge capability 3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) FEPF16xT PIN 1 • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) PIN 2 PIN 3 D2PAK (TO-263AB) • AEC-Q101 qualified (for ITO-220AB and TO-263AB package) K • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 TYPICAL APPLICATIONS 1 FEPB16xT PIN 1 For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. K PIN 2 HEATSINK DESIGN SUPPORT TOOLS MECHANICAL DATA click logo to get started Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Models Available Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 2 x 8.0 A VRRM 50 V to 600 V IFSM 200 A, 125 A trr 35 ns, 50 ns VF 0.95 V, 1.30 V, 1.50 V Polarity: as marked Mounting Torque: 10 in-lbs max. TJ max. 150 °C Package TO-220AB, ITO-220AB, D2PAK (TO-263AB) Circuit configurations Common cathode MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL FEP16AT FEP16BT FEP16CT FEP16DT FEP16FT FEP16GT FEP16HT FEP16JT UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 500 600 V Maximum average forward rectified current at TC = 100 °C IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Operating storage and temperature range TJ, TSTG 16 200 A 125 -55 to +150 A °C Revision: 08-Jun-2018 Document Number: 88596 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FEP16xT, FEPF16xT, FEPB16xT www.vishay.com Vishay General Semiconductor MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min SYMBOL FEP16AT FEP16BT FEP16CT FEP16DT FEP16FT FEP16GT FEP16HT FEP16JT UNIT VAC 1500 V Revision: 08-Jun-2018 Document Number: 88596 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FEP16xT, FEPF16xT, FEPB16xT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode SYMBOL FEP 16AT FEP 16BT VF (1) 8.0 A Maximum DC reverse current per diode at rated DC blocking voltage FEP 16CT FEP 16DT FEP 16FT 0.95 FEP 16GT FEP 16HT 1.30 TC = 25 °C FEP UNIT 16JT 1.50 V 10 IR μA TC = 100 °C 500 Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance per diode 4.0 V, 1 MHz CJ 35 50 85 ns 60 pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL FEP FEPF FEPB UNIT RJC 2.2 3.1 2.2 °C/W Typical thermal resistance from junction to case per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.85 45 50/tube Tube TO-220AB FEP16JT-E3/45 ITO-220AB FEPF16JT-E3/45 1.97 45 50/tube Tube TO-263AB FEPB16JT-E3/45 1.35 45 50/tube Tube TO-263AB FEPB16JT-E3/81 1.35 81 800/reel Tape and reel ITO-220AB FEPF16JTHE3/45 (1) 1.97 45 50/tube Tube FEPB16JTHE3/45 (1) 1.35 45 50/tube Tube FEPB16JTHE3/81 (1) 1.35 81 800/reel Tape and reel TO-263AB TO-263AB Note (1) AEC-Q101 qualified, available in ITO-220AB and TO-263AB package Revision: 08-Jun-2018 Document Number: 88596 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FEP16xT, FEPF16xT, FEPB16xT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 20 Instantaneous Reverse Leakage Current (μA) Average Forward Current (A) Resistive or Inductive Load 16 12 8 4 0 10 1 TJ = 100 °C TJ = 25 °C 0.1 0.01 0 50 100 0 150 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 300 1000 TC = 100 °C 8.3 ms Single Half Sine-Wave 250 200 150 100 50 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 50 V to 400 V 500 V to 600 V Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 125 °C 50 V to 400 V 500 V to 600 V 100 10 0 1 10 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Instantaneous Forward Current (A) 100 TJ = 125 °C 10 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 1 50 V to 200 V 300 V to 400 V 500 V to 600 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Revision: 08-Jun-2018 Document Number: 88596 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FEP16xT, FEPF16xT, FEPB16xT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.415 (10.54) max. 0.370 (9.40) 0.360 (9.14) TO-220AB 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) PIN 1 2 3 0.635 (16.13) 0.625 (15.87) 0.160 (4.06) 0.140 (3.56) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.076 (1.93) REF. 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) D2PAK (TO-263AB) 2 0.624 (15.85) 0.591 (15.00) 0.035 (0.89) 0.025 (0.64) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.110 (2.79) 0.100 (2.54) 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) K 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.057 (1.45) 0.045 (1.14) K 1 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 7° REF. 0.350 (8.89) 0.330 (8.38) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.245 (6.22) MIN. 0.671 (17.04) 0.651 (16.54) PIN 1 2 3 0.025 (0.64) 0.015 (0.38) 0.190 (4.83) 0.160 (4.06) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.035 (0.90) 0.028 (0.70) 0.411 (10.45) 0.380 (9.65) 7° REF. 0.076 (1.93) REF. 45° REF. 0.560 (14.22) 0.530 (13.46) 0.205 (5.20) 0.195 (4.95) ITO-220AB 0.404 (10.26) 0.384 (9.75) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 08-Jun-2018 Document Number: 88596 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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