FEPE16AT-E3/45

FEPE16AT thru FEPE16GT www.vishay.com Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time TO-220AB • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 FEPE16XT Series TYPICAL APPLICATIONS PIN 1 PIN 2 PIN 3 CASE For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 8.0 A VRRM 50 V to 400 V IFSM 200 A, 125 A trr 35 ns, 50 ns VF 0.95 V, 1.30 V TJ max. 150 °C Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commerical grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL FEPE16AT FEPE16BT FEPE16CT FEPE16DT FEPE16FT FEPE16GT UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 V Maximum RMS voltage VRMS 35 70 105 140 210 280 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 V Maximum average forward rectified current at TC = 100 °C IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Operating and storage temperature range Revision: 30-Jan-13 TJ, TSTG 16 200 A 125 - 55 to + 150 A °C Document Number: 89981 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FEPE16AT thru FEPE16GT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL FEPE16AT FEPE16BT FEPE16CT FEPE16DT FEPE16FT FEPE16GT UNIT Maximum instantaneous forward voltage per diode 8.0 A Maximum DC reverse current per diode at rated VR Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance per diode 4.0 V, 1 MHz CJ VF (1) TC = 25 °C 0.95 1.30 V 10 IR (2) μA TC = 100 °C 500 35 50 ns 85 pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL FEPE16AT Typical thermal resistance FEPE16BT FEPE16CT FEPE16DT per diode RJC 2.2 per device RJA (1) 50 FEPE16FT FEPE16GT UNIT °C/W Note (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.92 45 50/tube Tube FEPE16GT-E3/45 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 20 Average Forward Current (A) 16 12 8 4 0 Peak Forward Surge Current (A) 300 Resistive or Inductive Load TC = 100 °C 8.3 ms Single Half Sine-Wave 250 200 150 100 50 0 0 50 100 150 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 30-Jan-13 Document Number: 89981 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FEPE16AT thru FEPE16GT www.vishay.com Vishay General Semiconductor 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 50 V to 400 V TJ = 125 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 1 100 50 V to 200 V 300 V to 400 V 10 0.1 0.2 0.4 0.6 1.0 0.8 1.4 1.2 1.6 1.8 0.1 2.0 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 TJ = 125 °C Instantaneous Reverse Leakage Current (μA) 50 V to 400 V 10 TJ = 100 °C 1 TJ = 25 °C 0.1 0.01 0 20 40 80 60 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.185 (4.70) 0.175 (4.44) 0.415 (10.54) Max. 0.113 (2.87) 0.103 (2.62) 0.055 (1.39) 0.045 (1.14) 0.260 (6.6) 0.236 (6.0) 0.159 (4.04) 0.143 (3.64) 0.603 (15.32) 0.573 (14.55) 1 0.060 (1.50) 0.047 (1.20) 2 3 0.160 (4.06) 0.140 (3.56) 0.560 (14.22) 0.530 (13.46) 0.040 (0.84) 0.024 (0.62) Pin 1 Pin 2 0.10 (2.54) Revision: 30-Jan-13 0.10 (2.54) Pin 3 0.022 (0.56) 0.014 (0.36) Document Number: 89981 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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