FES8DT-E3/45

FES8xT, FESF8xT, FESB8xT www.vishay.com Vishay General Semiconductor Ultrafast Plastic Rectifier TO-220AC FEATURES ITO-220AC • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency Available 2 2 1 1 FES8xT FESF8xT PIN 1 PIN 1 PIN 2 CASE PIN 2 D2PAK (TO-263AB) 2 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (D2PAK (TO-263AB package)) • Solder dip 275 °C max., 10 s per JESD 22-B106 (for TO-220AC and ITO-220AC package) - Automotive ordering code: base P/NHE3 (for ITO-220AC) base P/NHM3 (for D2PAK (TO-263AB package)) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 FESB8xT PIN 2 • High forward surge capability • AEC-Q101 qualified available K PIN 1 • Low leakage current K HEATSINK LINKS TO ADDITIONAL RESOURCES 3D 3D TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. 3D Models MECHANICAL DATA Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB) PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 50 V to 600 V IFSM 125 A trr 35 ns, 50 ns VF 0.95 V, 1.30 V, 1.50 V TJ max. 150 °C Package TO-220AC, ITO-220AC, D2PAK (TO-263AB) Circuit configurations Single Molding compound meets UL 94V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified (“_X” denotes revision code, e.g. A, B, ...) Base P/N-M3 - RoHS-compliant, halogen-free, commercial grade Base P/NHM3 - RoHS-compliant, halogen-free, AEC-Q101 qualified Terminals: matte tin plated J-STD-002 and JESD22-B102 leads, solderable per E3 and M3 suffix meets JESD 201 class 1A whisker test, HE3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: as marked Mounting Torque: 10 in-lbs max. Revision: 25-Oct-2023 Document Number: 88600 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FES8xT, FESF8xT, FESB8xT www.vishay.com Vishay General Semiconductor MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) FES8DT FES8GT FES8JT FES8BT FES8CT FES8FT FES8HT FESF8DT FESF8GT FESF8JT UNIT FESF8BT FESF8CT FESF8FT FESF8HT FESB8GT FESB8JT FESB8DT SYMBOL FES8AT FESF8AT Max. repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V PARAMETER Max. RMS voltage VRMS 35 70 105 140 210 280 350 420 V Max. DC blocking voltage VDC 50 100 150 200 300 400 500 600 V Max. average forward rectified current at TC = 100 °C IF(AV) 8.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 125 A Operating storage and temperature range TJ, TSTG -55 to +150 °C VAC 1500 V Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Max. instantaneous forward voltage (1) Max. DC reverse current at rated DC blocking voltage FES8DT FES8GT FES8JT FES8AT FES8BT FES8CT FES8FT FES8HT TEST FESF8GT FESF8JT UNIT FESF8DT SYMBOL FESF8AT FESF8BT FESF8CT FESF8FT FESF8HT CONDITIONS FESB8DT FESB8GT FESB8JT 8.0 A VF 0.95 1.3 TC = 25 °C 1.5 V 10 IR μA TC = 100 °C 500 Max. reverse recovery time IF = 0.5 A,  IR = 1.0  Irr = 0.25 A trr Typical junction capacitance 4.0 V,  1 MHz CJ 35 50 85 ns 50 pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance from junction to case SYMBOL FES FESF FESB UNIT RJC 2.2 5.0 2.2 °C/W ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY TO-220AC FES8JT-E3/45 PREFERRED P/N 1.80 45 50/tube DELIVERY MODE Tube ITO-220AC FESF8JT-E3/45 1.85 45 50/tube Tube D2PAK (TO-263AB) FESB8JT-M3/I 1.33 I 800/reel Tape and reel ITO-220AC FESF8JTHE3_A/P (1) 1.85 P 50/tube Tube D2PAK (TO-263AB) FESB8JTHM3/I (1) 1.33 I 800/reel Tape and reel Note AEC-Q101 qualified, available in ITO-220AC and D2PAK (TO-263AB) package (1) Revision: 25-Oct-2023 Document Number: 88600 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FES8xT, FESF8xT, FESB8xT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted) 100 Resistive or Inductive Load Instantaneous Reverse Leakage Current (µA) Average Forward Rectified Current (A) 10 8 Heatsink, Case Temperature, TC 6 Free Air, Ambient Temperature, TA 4 2 10 1 TJ = 100 °C 50 - 200 V 500 - 600 V 0.1 TJ = 25 °C 0.01 0 0 50 100 0 150 40 20 60 80 100 Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Max. Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 150 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TC = 100 °C 8.3 ms Single Half Sine-Wave 125 Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 125 °C 100 75 50 25 100 50 - 200 V 500 - 600 V 0 10 1 10 100 0.1 1 10 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 100 Instantaneous Forward Current (A) 100 Pulse Width = 300 µs 1 % Duty Cycle TJ = 125 °C 10 TJ = 25 °C 1 50 - 200 V 300 - 400 V 500 - 600 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Revision: 25-Oct-2023 Document Number: 88600 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FES8xT, FESF8xT, FESB8xT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54) MAX. ITO-220AC 0.154 (3.91) DIA. 0.148 (3.74) DIA. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.076 (1.93) REF. 0.076 (1.93) REF. 45° REF. 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 1 PIN 0.350 (8.89) 0.330 (8.38) 0.603 (15.32) 0.573 (14.55) 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) PIN 1 PIN 2 2 0.560 (14.22) 0.530 (13.46) 0.025 (0.64) 0.015 (0.38) 0.022 (0.56) 0.014 (0.36) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.028 (0.71) 0.020 (0.51) Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 2 0.624 (15.85) 0.591 (15.00) 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 7° REF. 0.350 (8.89) 0.330 (8.38) 7° REF. K K 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.191 (4.85) 0.171 (4.35) D2PAK (TO-263AB) 1 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. CASE 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.411 (10.45) 0.380 (9.65) 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.105 (2.67) 0.095 (2.41) 0.600 (15.24) 0.580 (14.73) 1.148 (29.16) 1.118 (28.40) 2 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.404 (10.26) 0.384 (9.75) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 25-Oct-2023 Document Number: 88600 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Jan-2024