FESE16BT-E3/45

FESE16AT thru FESE16GT www.vishay.com Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time TO-220AC • Low switching losses, high efficiency • High forward surge capability • Low leakage current • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 FESE16XT Series TYPICAL APPLICATIONS PIN 1 PIN 2 For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. CASE MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 16 A VRRM 50 V to 400 V IFSM 250 A trr 35 ns, 50 ns VF 0.975 V, 1.30 V TJ max. 150 °C Case: TO-220AC Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commerical grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL FESE16AT FESE16BT FESE16CT FESE16DT FESE16FT FESE16GT UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 V Maximum RMS voltage VRMS 35 70 105 140 210 280 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 V Maximum average forward rectified current at TC = 100 °C IF(AV) 16 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 250 A Operating storage and temperature range TJ, TSTG - 65 to + 150 °C Revision: 01-Feb-13 Document Number: 89983 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FESE16AT thru FESE16GT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL FESE16AT FESE16BT FESE16CT FESE16DT FESE16FT FESE16GT UNIT Maximum instantaneous forward voltage 16 A Maximum DC reverse current at rated VR Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance 4.0 V, 1 MHz CJ VF (1) TC = 25 °C TC = 100 °C 0.975 1.30 V 10 IR (2) μA 500 35 50 ns 175 pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance FESE16AT FESE16BT FESE16CT FESE16DT RJC 1.2 RJA (1) 50 FESE16FT FESE16GT UNIT °C/W Note (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC FESE16GT-E3/45 1.86 45 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 300 Resistive or Inductive Load 16 12 8 4 0 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 20 TJ = TJ max. 8.3 ms Single Half Sine-Wave (JEDEC Method) 250 200 150 100 50 0 0 50 100 150 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 01-Feb-13 Document Number: 89983 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FESE16AT thru FESE16GT www.vishay.com Vishay General Semiconductor 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = 125 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 25 °C 1 100 50 V to 200 V 300 V to 400 V 0.1 0.2 50 V to 400 V 10 0.4 0.6 0.8 1.0 1.4 1.2 1 0.1 1.6 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Instantaneous Reverse Leakage Current (μA) 1000 50 V to 200 V 300 V to 400 V TJ = 125 °C 100 10 TJ = 100 °C TJ = 25 °C 1 0.1 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.185 (4.70) 0.175 (4.44) 0.415 (10.54) Max. 0.113 (2.87) 0.103 (2.62) 0.055 (1.39) 0.045 (1.14) 0.260 (6.6) 0.236 (6.0) 0.159 (4.04) 0.143 (3.64) 0.603 (15.32) 0.573 (14.55) 1 2 0.160 (4.06) 0.140 (3.56) 0.060 (1.50) 0.047 (1.20) 0.560 (14.22) 0.530 (13.46) 0.040 (0.84) 0.024 (0.62) Pin 1 0.20 (5.08) Revision: 01-Feb-13 Pin 2 0.022 (0.56) 0.014 (0.36) Document Number: 89983 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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