FESF8GT-E3/45

FES16xT, FESF16xT, FESB16xT www.vishay.com Vishay General Semiconductor Ultrafast Plastic Rectifier TO-220AC FEATURES ITO-220AC • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency Available 2 2 1 1 FES16xT Series FESF16xT Series PIN 1 PIN 2 PIN 1 CASE PIN 2 D2PAK (TO-263AB) K 2 1 • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for D2PAK (TO-263AB) package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package) • AEC-Q101 qualified available - Automotive ordering code:  base P/NHE3(for ITO-220AC) base P/NHM3(for D2PAK (TO-263AB package)) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 FESB16xT Series PIN 1 PIN 2 K HEATSINK DESIGN SUPPORT TOOLS AVAILABLE 3D 3D TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. 3D Models MECHANICAL DATA Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB) PRIMARY CHARACTERISTICS IF(AV) 16 A VRRM 50 V to 600 V IFSM 250 A trr 35 ns, 50 ns VF 0.975 V, 1.30 V, 1.50 V TJ max. 150 °C Package TO-220AC, ITO-220AC, D2PAK (TO-263AB) Circuit configurations Single Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,....) Base P/N-M3 - RoHS-compliant, halogen-free, commercial grade Base P/NHM3 AEC-Q101 qualified RoHS-compliant, Terminals: matte tin plated J-STD-002 and JESD 22-B102 leads, halogen-free, solderable per E3 and M3 suffix meets JESD 201 class 1A whisker test, HE3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: as marked Mounting Torque: 10 in-lbs max. Revision: 25-Oct-2023 Document Number: 88599 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FES16xT, FESF16xT, FESB16xT www.vishay.com Vishay General Semiconductor MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) SYMBOL FES16AT FESF16AT FES16BT FESF16BT FES16CT FESF16CT FES16DT FESF16DT FESB16DT FES16FT FESF16FT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 Maximum RMS voltage VRMS 35 70 105 140 210 Maximum DC blocking voltage VDC 50 100 150 200 300 Maximum average forward rectified current at  TC = 100 °C IF(AV) 16 A Peak forward surge current 8.3 ms single half sine-wave superimposed on  rated load IFSM 250 A Operating storage and temperature range TJ, TSTG -65 to +150 °C Isolation voltage  (ITO-220AC only) from terminal to heatsink t = 1 min VAC 1500 V PARAMETER FES16GT FES16HT FESF16GT FESF16HT FESB16GT FES16JT FESF16JT FESB16JT UNIT 500 600 V 280 350 420 V 400 500 600 V ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage FES16DT FES16FT FES16GT FES16JT FES16AT FES16BT FES16CT FES16HT TEST FESF16JT UNIT FESF16DT FESF16FT FESF16GT SYMBOL FESF16AT FESF16BT FESF16CT FESF16HT CONDITIONS FESB16DT FESB16GT FESB16JT VF (1) 16 A 0.975 1.30 TC = 25 °C TC = 100 °C 1.50 V 10 IR Maximum reverse recovery time IF = 0.5 A,  IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance 4.0 V,  1 MHz CJ μA 500 35 50 175 ns 145 pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to case SYMBOL FES FESF FESB UNIT RJC 1.2 1.7 1.2 °C/W ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY TO-220AC FES16JT-E3/45 PREFERRED P/N 1.78 45 50/tube DELIVERY MODE Tube ITO-220AC FESF16JT-E3/45 1.80 45 50/tube Tube D2PAK (TO-263AB) FESB16JT-M3/I 1.33 I 800/reel Tape and reel ITO-220AC FESF16JTHE3_A/P (1) 1.80 P 50/tube Tube D2PAK (TO-263AB) FESB16JTHM3/I (1) 1.33 I 800/reel Tape and reel Note AEC-Q101 qualified, available in ITO-220AC and D2PAK (TO-263AB) package (1) Revision: 25-Oct-2023 Document Number: 88599 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FES16xT, FESF16xT, FESB16xT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 Resistive or Inductive Load Instantaneous Reverse Leakage Current (μA) Average Forward Rectified Current (A) 20 16 12 8 4 0 TJ = 125 °C 100 10 TJ = 100 °C TJ = 25 °C 1 0.1 0 50 100 150 0 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 300 1000 TJ = TJ max. 8.3 ms Single Half Sine-Wave (JEDEC Method) 250 Junction Capacitance (pF) Peak Forward Surge Current (A) 50 V to 200 V 300 V to 400 V 200 150 100 50 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 50 V to 400 V 500 V to 600 V 10 0 1 100 10 0.1 1 10 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 100 Instantaneous Forward Current (A) 100 TJ = 125 °C 10 TJ = 25 °C 1 50 V to 200 V 300 V to 400 V 500 V to 600 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Revision: 25-Oct-2023 Document Number: 88599 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FES16xT, FESF16xT, FESB16xT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) DIA. 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 1 PIN 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 2 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) PIN 1 CASE PIN 2 0.105 (2.67) 0.095 (2.41) 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) ITO-220AC 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF. 45° REF. 0.600 (15.24) 0.580 (14.73) 0.671 (17.04) 0.651 (16.54) PIN 1 2 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.38) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.110 (2.79) 0.100 (2.54) 0.028 (0.71) 0.020 (0.51) Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 25-Oct-2023 Document Number: 88599 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Jan-2024