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FESF8HTHE3/45

FESF8HTHE3/45

  • 厂商:

    TFUNK(威世)

  • 封装:

    ITO220FP-2

  • 描述:

    DIODE GEN PURP 500V 8A ITO220AC

  • 数据手册
  • 价格&库存
FESF8HTHE3/45 数据手册
FES8xT, FESF8xT, FESB8xT www.vishay.com Vishay General Semiconductor Ultrafast Plastic Rectifier TO-220AC FEATURES ITO-220AC • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current 2 2 • High forward surge capability 1 1 FES8xT FESF8xT PIN 1 PIN 1 PIN 2 CASE • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max., 10 s per JESD 22-B106 (for TO-220AC and ITO-220AC package) PIN 2 D2PAK (TO-263AB) • AEC-Q101 qualified (for ITO-220AC and TO-263AB package) K • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 TYPICAL APPLICATIONS FESB8xT PIN 1 K PIN 2 For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. HEATSINK DESIGN SUPPORT TOOLS click logo to get started MECHANICAL DATA Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB) Models Available Molding compound meets UL 94V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 50 V to 600 V Terminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test IFSM 125 A trr 35 ns, 50 ns VF 0.95 V, 1.30 V, 1.50 V TJ max. 150 °C Package TO-220AC, ITO-220AC, D2PAK (TO-263AB) Circuit configurations Single Polarity: as marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL FES 8AT FES 8BT FES 8CT FES 8DT FES 8FT FES 8GT FES 8HT FES 8JT UNIT V Max. repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 Max. RMS voltage VRMS 35 70 105 140 210 280 350 420 V Max. DC blocking voltage VDC 50 100 150 200 300 400 500 600 V Max. average forward rectified current at TC = 100 °C IF(AV) 8.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 125 A TJ, TSTG -55 to +150 °C VAC 1500 V Operating storage and temperature range Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min Revision: 08-Jun-2018 Document Number: 88600 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FES8xT, FESF8xT, FESB8xT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL FES8AT FES8BT FES8CT FES8DT FES8FT FES8GT FES8HT FES8JT UNIT Max. instantaneous forward voltage (1) Max. DC reverse current at rated DC blocking voltage 8.0 A VF 0.95 1.3 TC = 25 °C 1.5 V 10 μA IR TC = 100 °C 500 Max. reverse recovery time IF = 0.5 A, IR = 1.0  Irr = 0.25 A trr Typical junction capacitance 4.0 V, 1 MHz CJ 35 50 85 ns 50 pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL FES FESF FESB UNIT RJC 2.2 5.0 2.2 °C/W Typical thermal resistance from junction to case ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC FES8JT-E3/45 1.80 45 50/tube Tube ITO-220AC FESF8JT-E3/45 1.85 45 50/tube Tube TO-263AB FESB8JT-E3/45 1.33 45 50/tube Tube TO-263AB FESB8JT-E3/81 1.33 81 800/reel Tape and reel ITO-220AC FESF8JTHE3/45 (1) 1.85 45 50/tube Tube TO-263AB FESB8JTHE3/45 (1) 1.33 45 50/tube Tube TO-263AB FESB8JTHE3/81 (1) 1.33 81 800/reel Tape and reel Note AEC-Q101 qualified, available in ITO-220AC and TO-263AB package (1) Revision: 08-Jun-2018 Document Number: 88600 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FES8xT, FESF8xT, FESB8xT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted) 100 Resistive or Inductive Load Instantaneous Reverse Leakage Current (µA) Average Forward Rectified Current (A) 10 8 Heatsink, Case Temperature, TC 6 Free Air, Ambient Temperature, TA 4 2 10 1 TJ = 100 °C 50 - 200 V 500 - 600 V 0.1 TJ = 25 °C 0.01 0 0 50 100 0 150 40 20 60 80 100 Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Max. Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 150 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TC = 100 °C 8.3 ms Single Half Sine-Wave 125 Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 125 °C 100 75 50 25 100 50 - 200 V 500 - 600 V 0 10 1 10 100 0.1 1 10 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 100 Instantaneous Forward Current (A) 100 Pulse Width = 300 µs 1 % Duty Cycle TJ = 125 °C 10 TJ = 25 °C 1 50 - 200 V 300 - 400 V 500 - 600 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Revision: 08-Jun-2018 Document Number: 88600 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FES8xT, FESF8xT, FESB8xT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC ITO-220AC 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) DIA. 0.113 (2.87) 0.103 (2.62) 0.076 (1.93) REF. 0.635 (16.13) 0.625 (15.87) 1 PIN 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1 2 0.037 (0.94) 0.027 (0.68) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) K 2 0.624 (15.85) 0.591 (15.00) 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) Mounting Pad Layout K 1 0.110 (2.79) 0.100 (2.54) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.38) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 7° REF. 0.057 (1.45) 0.045 (1.14) CASE 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) PIN 1 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.671 (17.04) 0.651 (16.54) PIN 0.110 (2.79) 0.100 (2.54) PIN 2 0.105 (2.67) 0.095 (2.41) 0.600 (15.24) 0.580 (14.73) 1.148 (29.16) 1.118 (28.40) 2 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.076 (1.93) REF. 45° REF. 0.145 (3.68) 0.135 (3.43) 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.404 (10.26) 0.384 (9.75) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 08-Jun-2018 Document Number: 88600 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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