FESF8JTHE3_A/P

FES(F,B)8AT thru FES(F,B)8JT Vishay General Semiconductor Ultrafast Plastic Rectifier TO-220AC FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC ITO-220AC 2 2 1 1 FESF8xT FES8xT PIN 1 PIN 1 CASE PIN 2 PIN 2 TO-263AB K TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. 2 1 FESB8xT PIN 1 K PIN 2 HEATSINK MECHANICAL DATA Case: TO-220AC, ITO-220AC, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meests JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 50 V to 600 V IFSM 125 A trr 35 ns, 50 ns VF 0.95 V, 1.30 V, 1.50 V TJ max. 150 °C MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) SYMBOL FES 8AT FES 8BT FES 8CT FES 8DT FES 8FT FES 8GT FES 8HT FES 8JT UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS voltage PARAMETER VRMS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 500 600 V Maximum average forward rectified current at TC = 100 °C IF(AV) 8.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 125 A TJ, TSTG - 55 to + 150 °C VAC 1500 V Operating storage and temperature range Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min Document Number: 88600 Revision: 07-Nov-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 FES(F,B)8AT thru FES(F,B)8JT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage (1) SYMBOL 8.0 A Maximum DC reverse current at rated DC blocking voltage FES 8AT FES 8BT VF TC = 25 °C TC = 100 °C FES 8CT FES 8DT 0.95 IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance 4.0 V, 1 MHz CJ FES 8GT FES 8HT 1.3 FES 8JT UNIT 1.5 V 10 500 IR Maximum reverse recovery time FES 8FT µA 35 50 85 ns 50 pF Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance from junction to case SYMBOL FES FESF FESB UNIT RθJC 2.2 5.0 2.2 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.80 45 50/tube Tube 45 50/tube Tube 45 50/tube Tube 81 800/reel Tape and reel 1.80 45 50/tube Tube 1.85 45 50/tube Tube TO-220AC FES8JT-E3/45 ITO-220AC FESF8JT-E3/45 1.85 TO-263AB FESB8JT-E3/45 1.33 TO-263AB FESB8JT-E3/81 1.33 TO-220AC FES8JTHE3/45 (1) ITO-220AC FESF8JTHE3/45 (1) TO-263AB FESB8JTHE3/45 (1) 1.33 45 50/tube Tube TO-263AB FESB8JTHE3/81 (1) 1.33 81 800/reel Tape and reel Note: (1) Automotive grade AEC Q101 qualified www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88600 Revision: 07-Nov-07 FES(F,B)8AT thru FES(F,B)8JT Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Resistive or Inductive Load Instantaneous Reverse Leakage Current (µA) Average Forward Rectified Current (A) 10 8 Heatsink, Case Temperature, TC 6 Free Air, Ambient Temperature, TA 4 2 10 1 TJ = 100 °C 50 - 200 V 500 - 600 V 0.1 TJ = 25 °C 0.01 0 0 50 100 0 150 40 20 60 80 100 Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Figure 1. Maximum Forward Current Derating Curve Figure 4. Typical Reverse Leakage Characteristics 150 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TC = 100 °C 8.3 ms Single Half Sine-Wave 125 Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 125 °C 100 75 50 25 100 50 - 200 V 500 - 600 V 0 10 1 10 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Figure 5. Typical Junction Capacitance Instantaneous Forward Current (A) 100 Pulse Width = 300 µs 1 % Duty Cycle TJ = 125 °C 10 TJ = 25 °C 1 50 - 200 V 300 - 400 V 500 - 600 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Document Number: 88600 Revision: 07-Nov-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 FES(F,B)8AT thru FES(F,B)8JT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AC TO-220AC 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) DIA. 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.560 (14.22) 0.530 (13.46) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 7° REF. 0.191 (4.85) 0.171 (4.35) CASE 0.037 (0.94) 0.027 (0.68) 7° REF. 2 1 0.560 (14.22) 0.530 (13.46) PIN 1 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.350 (8.89) 0.330 (8.38) 0.110 (2.79) 0.100 (2.54) PIN 2 0.105 (2.67) 0.095 (2.41) 0.671 (17.04) 0.651 (16.54) PIN 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 7° REF. 0.076 (1.93) REF. 45° REF. 0.635 (16.13) 0.625 (15.87) 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88600 Revision: 07-Nov-07 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000