G3SBA20, G3SBA60, G3SBA80
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
~
~
• High case dielectric strength of 1500 VRMS
+
-
-
~
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106
+
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Case Style GBU
Case Style GBU
TYPICAL APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
General purpose use in AC/DC bridge full wave rectification
for monitor, TV, printer, switching mode power supply,
adapter, audio equipment, and home appliances
applications.
3D 3D
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
4.0 A
VRRM
200 V, 600 V, 800 V
IFSM
80 A
IR
5 μA
VF at IF = 2.0 V
1.0 V
TJ max.
150 °C
Case: GBU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Package
GBU
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and M3 suffix meet JESD 201 class 1A whisker test
Circuit configuration
In-line
Polarity: as marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
G3SBA20
G3SBA60
G3SBA80
UNIT
Maximum repetitive peak reverse voltage
VRRM
200
600
800
V
Maximum RMS voltage
VRWM
140
420
560
V
VDC
200
600
800
V
Maximum DC blocking voltage
Maximum average forward rectified
output current at
TC = 100 °C (1)
TA = 25 °C (2)
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
4.0
IF(AV)
A
2.3
IFSM
80
A
I2t
27
A2s
TJ, TSTG
-55 to + 150
°C
Notes
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage per diode
Maximum DC reverse current at
rated DC blocking voltage per diode
TEST CONDITIONS
2.0 A
TJ = 25 °C
TJ = 125 °C
SYMBOL
VF
IR
G3SBA20
G3SBA60
1.00
5.0
400
G3SBA80
UNIT
V
μA
Revision: 10-Jul-2020
Document Number: 88606
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
G3SBA20, G3SBA60, G3SBA80
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
G3SBA20
G3SBA60
RJA (2)
26
RJC (1)
5.0
G3SBA80
UNIT
°C/W
Notes
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
G3SBA60-E3/45
3.404
45
20
Tube
G3SBA60-E3/51
3.404
51
250
Paper tray
G3SBA60-M3/45
3.404
45
20
Tube
G3SBA60-M3/51
3.404
51
250
Paper tray
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Heatsink Mounting, TC
Instantaneous Forward Current (A)
Average Forward Output Current (A)
4
3
2
P.C.B. Mounting, TA
1
25
50
75
100
125
150
0.1
0.8
1.2
1.6
2.0
2.4
Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
100
100
Instantaneous Reverse Current (µA)
Peak Forward Surge Current (A)
1
0.01
0.4
0
0
10
80
60
40
20
1.0 Cycle
TA = 125 °C
10
1
0.1
TA = 25 °C
0.01
0
1
10
100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics
Per Diode
Revision: 10-Jul-2020
Document Number: 88606
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
G3SBA20, G3SBA60, G3SBA80
www.vishay.com
Vishay General Semiconductor
100
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
100
10
1
10
1
0.1
0.01
1
0.1
10
100
0.1
1
10
100
Reverse Voltage (V)
t - Heating Time (s)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type GBU
0.020 R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.085 (2.16)
0.065 (1.65)
0.140 (3.56)
0.130 (3.30)
0.880 (22.3)
0.860 (21.8)
0.125 (3.2) x 45°
Chamfer
0.160 (4.1)
0.140 (3.5)
0.075
(1.9) R
.
9° TYP.
0.740 (18.8)
0.720 (18.3)
0.080 (2.03)
0.060 (1.52)
5° TYP.
0.100 (2.54)
0.085 (2.16)
0.080 (2.03)
0.065 (1.65)
0.050 (1.27)
0.040 (1.02)
0.190 (4.83)
0.210 (5.33)
0.710 (18.0)
0.690 (17.5)
0.085 (2.16)
0.075 (1.90)
0.026 (0.66)
0.020 (0.51)
Polarity shown on front side of case, positive lead by beveled corner
Revision: 10-Jul-2020
Document Number: 88606
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 01-Jan-2023
1
Document Number: 91000
