GB35XF120K

Bulletin I27282 11/06 GB35XF120K IGBT SIXPACK MODULE VCES = 1200V Features • Low VCE (on) Non Punch Through IGBT Technology • Low Diode VF IC =35A @ TC=80°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient • Ceramic DBC Substrate tsc > 10μs @ TJ=150°C ECONO2 6PACK VCE(on) typ. = 2.40V • Low Stray Inductance Design • TOTALLY LEAD-FREE Benefits • • • • • • • Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Low Junction to Case Thermal Resistance UL Approved E78996 Absolute Maximum Ratings Parameter Max. VCES Collector-to-Emitter Voltage 1200 Units V IC @ Tc=25°C Continuous Collector Current 50 A IC @ Tc=80°C Continuous Collector Current 35 ICM Pulsed Collector Current (Ref. Fig. C.T.5) 100 ILM Clamped Inductive Load Current 100 IF @ Tc=25°C Diode Continuous Forward Current 50 IF @ Tc=80°C Diode Continuous Forward Current 35 IFM Pulsed Diode Maximum Forward Current 100 VGE Gate-to-Emitter Voltage ±20 V PD @ Tc=25°C Maximum Power Dissipation (IGBT and Diode) 284 W PD @ Tc=80°C Maximum Power Dissipation (IGBT and Diode) 159 TJ Maximum Operating Junction Temperature TSTG Storage Temperature Range VISOL Isolation Voltage 150 °C -40 to +125 AC 2500 (MIN) V Thermal and Mechanical Characteristics Min Typical Maximum Units RθJC (IGBT) Junction-to-Case IGBT Parameter - - 0.44 °C/W RθJC (Diode) Junction-to-Case Diode - - 0.80 RθCS (Module) Case-to-Sink, flat, greased surface Mounting Torque (M5) Weight Document Number: 93651 - 0.05 - 2.7 - 3.3 - 170 - N*m g www.vishay.com 1 GB35XF120K Bulletin I27282 11/06 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) BV(CES) Parameter Collector-to-Emitter Breakdown Voltage Min. Typ. Max. Units Conditions 1200 V VGE = 0 IC = 500μA ΔV(BR)CES/ΔTJ Temp. Coefficient of Breakdown Voltage - 0.7 V CE(ON) Collector-to-Emitter Voltage - 2.40 2.60 - 2.75 3.00 IC = 50A VGE = 15V - 2.80 - IC = 35A VGE = 15V TJ = 125°C - 3.30 - 4.0 5.25 6.0 - V/°C V VGE = 0 IC = 1mA (25°C - 125°C) IC = 35A VGE = 15V IC =50A VGE = 15V TJ = 125°C VGE(th) Gate Threshold Voltage ΔV GE (th)/ΔT J Thresold Voltage temp. coefficient - -11 - ICES Zero Gate Voltage Collector Current - - 100 - 500 - - 1.90 2.35 - 2.15 2.65 - 2.00 - IF = 35A Tj = 125°C - 2.35 - IF = 50A Tj = 125°C - - ±200 V FM IGES Diode Forward Voltage Drop Gate-to-Emitter Leakage Current VCE = VGE IC = 250μA mV/°C VCE = VGE IC = 1mA (25°C-125°C) μA VGE = 0 VCE = 1200V V IF = 35A VGE = 0 VCE = 1200V Tj = 125°C IF = 50A nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions QG Total Gate Charge (turn-on) - 255 385 QGE Gate-to-Emitter Charge (turn-on) - 25 40 QGC Gate-to-Collector Charge (turn-on) - 125 90 EON Turn-On Switching Loss - 2700 4075 EOFF Turn-Off Switching Loss - 2500 3775 ETOT Total Switching Loss - 5200 7850 EON Turn-On Switching Loss - 3750 5450 EOFF Turn-Off Switching Loss - 3675 5100 ETOT Total Switching Loss - 7425 10550 td(on) Turn-On delay time - tr Rise time - 35 50 VGE = 15V RG = 10Ω L = 400μH td(off) Turn-Off delay time - 415 560 Tj = 125°C tf Fall time - 230 300 Cies Input Capacitance - 3475 - Coes Output Capacitance - 615 - VCC = 30V Cres Reverse Transfer Capacitance - 90 - f = 1Mhz RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area 50 65 IC = 35A nC VCC = 600A VGE = 15V μJ IC = 35A VCC = 600V VGE = 15V RG = 10Ω L = 400μH Tj = 25°C c μJ IC = 35A VCC = 600V VGE = 15V RG = 10Ω L =400μH Tj = 125°C c ns pF IC = 35A VCC = 600V VGE = 0 Tj = 150°C IC = 100A RG = 10Ω VGE = 15V to 0 10 - - μs Tj = 150°C VCC = 900V VP = 1200V RG = 10Ω Irr Diode Peak Rev. Recovery Current - 73 - A VGE = 15V to 0 Tj = 125°C VCC = 600V IF = 35A L =400μH VGE = 15V RG = 10Ω c Energy losses include "tail" and diode reverse recovery. Document Number: 93651 www.vishay.com 2 GB35XF120K Bulletin I27282 11/06 70 70 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 50 40 ICE (A) ICE (A) 50 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 30 40 30 20 20 10 10 0 0 0 1 2 3 4 5 6 0 1 2 VCE (V) Fig. 1 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs 20 20 18 18 16 16 5 6 14 12 ICE = 17.5A 10 ICE = 35A 8 ICE = 70A VCE (V) VCE (V) 4 Fig. 2 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80μs 14 12 ICE = 17.5A 10 ICE = 35A 8 ICE = 70A 6 6 4 4 2 2 0 0 5 10 15 5 20 10 15 20 VGE (V) VGE (V) Fig. 3 - Typical VCE vs. VGE TJ = 25°C Fig. 4 - Typical VCE vs. VGE TJ = 125°C 1000 8000 7000 tdOFF 5000 Swiching Time (ns) EON 6000 Energy (µJ) 3 VCE (V) EOFF 4000 3000 tF 100 tdON 2000 tR 1000 0 10 0 20 40 60 IC (A) Fig. 5 - Typ. Energy Loss vs. IC TJ = 125°C; L=400μH; VCE= 600V RG= 10Ω; VGE= 15V Document Number: 93651 80 0 20 40 60 80 IC (A) Fig. 6 - Typ. Switching Time vs. IC TJ = 125°C; L=400μH; VCE= 600V RG= 10Ω; VGE= 15V www.vishay.com 3 GB35XF120K Bulletin I27282 11/06 7000 10000 6000 EON Swiching Time (ns) Energy (µJ) 5000 EOFF 4000 3000 2000 1000 td OFF tF 100 td ON 1000 tR 10 0 0 10 20 30 40 0 50 10 20 40 50 Fig. 8 - Typ. Switching Time vs. RG TJ = 125°C; L=400μH; VCE= 600V ICE= 35A; VGE= 15V Fig. 7 - Typ. Energy Loss vs. RG TJ = 125°C; L=400μH; VCE= 600V ICE= 35A; VGE= 15V 16 10000 Cies 14 400V 12 1000 100 600V 10 Coes VGE (V) Capacitance (pF) 30 R G ( Ω) RG ( Ω) Cres 8 6 4 2 0 10 0 20 40 60 80 100 VCE (V) Fig. 9- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 0 50 100 150 200 250 300 Q G , Total Gate Charge (nC) Fig. 10 - Typical Gate Charge vs. VGE ICE = 35A; L = 600µH 60 IC (A) 40 20 0 0 20 40 60 80 100 120 140 160 T C (°C) Fig. 11 - Maximum DC Collector Current vs. Case Temperature Document Number: 93651 Fig. 12 - Power Dissipation vs. Case Temperature www.vishay.com 4 GB35XF120K Bulletin I27282 11/06 1000 1000 100 100 10 IC (A) IC (A) 20 µs 100 µs 10 1 ms 10 ms 1 DC 0.1 1 1 10 100 1000 10000 10 VCE (V) 1000 10000 VCE (V) Fig. 14 - Reverse Bias SOA TJ = 150°C; VGE =15V Fig. 13 - Forward SOA TC = 25°C; TJ ≤ 150°C 70 400 T J = 25°C 350 25°C 125°C 60 T J = 125°C 300 50 IF (A) 250 ICE (A) 100 200 40 30 150 20 100 10 50 0 0 0 5 10 15 0.0 20 2.0 3.0 4.0 VGE (V) V F (V) Fig. 15 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs Fig. 16 - Typ. Diode Forward Characteristics tp = 80µs 100 90 RG = 4.7 Ω 90 80 80 70 RG = 10 Ω 70 60 60 IRR (A) IRR (A) 1.0 RG = 22 Ω 50 40 RG = 47 Ω 30 50 40 30 20 20 10 10 0 0 0 20 40 IF (A) 60 Fig. 17 - Typical Diode IRR vs. IF TJ = 125°C Document Number: 93651 80 0 10 20 30 40 50 RG ( Ω) Fig. 18 - Typical Diode IRR vs. RG TJ = 125°C, IF = 35A www.vishay.com 5 GB35XF120K Bulletin I27282 11/06 90 80 70 IRR (A) 60 50 40 30 20 10 0 0 500 1000 1500 2000 2500 diF /dt (A/µs) Fig. 19- Typical Diode IRR vs. diF/dt; VCC= 600V; VGE= 15V; ICE= 35A; TJ = 125°C 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.01 0.02 0.01 τJ R1 R1 τJ τ1 R2 R2 τ2 τ1 Ri (°C/W) τi (sec) 0.086 0.000561 τC τ 0.354 τ2 0.039382 Ci= τi/Ri Ci i/Ri 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.10 0.05 0.1 0.01 0.02 0.01 τJ R1 R1 τJ τ1 τ1 R2 R2 τ2 R3 R3 τC τ τ2 Ci= τi/Ri Ci= i/Ri 0.001 τ3 τ3 Ri (°C/W) τi (sec) 0.049 0.00006 0.154 0.00077 0.597 0.038148 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 t1 , Rectangular Pulse Duration (sec) Fig 21. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) Document Number: 93651 www.vishay.com 6 GB35XF120K Bulletin I27282 11/06 L L VCC DUT 80 V DUT 1000V Rg 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit R= diode clamp / DUT Driver 900V D C L - 5V DUT DUT / DRIVER DUT VCC Fig.C.T.4 - Switching Loss Circuit Fig.C.T.3 - S.C. SOA Circuit 900 800 90% ICE 120 40 700 105 600 90 500 25 tf 20 300 15 5% V CE 200 10 5% ICE 100 0 500 75 TEST CURRENT V CE (V) 30 ICE (A) V CE (V) 800 600 400 400 60 90% test current 300 45 200 5 100 0 0 30 10% test current tr 5% V CE 0.00 1.00 2.00 -5 3.00 Time(µs) Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 125°C using Fig. CT.4 Document Number: 93651 -100 10.00 10.20 10.40 15 0 Eon Loss Eoff Loss -100 -1.00 Fig.C.T.5 - Resistive Load Circuit 45 35 VCC Rg Rg 700 VCC ICM ICE (A) 0 10.60 -15 10.80 Time (µs) Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 125°C using Fig. CT.4 www.vishay.com 7 GB35XF120K Bulletin I27282 11/06 Econo2 6Pak Package Outline Dimensions are shown in millimeters (inches) Econo2 6Pak Part Marking Information LOT GB35XF120K Made in Italy Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. Document Number: 93651 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 11/06 www.vishay.com 8 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. 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Document Number: 99901 Revision: 12-Mar-07 www.vishay.com 1