GBPC3510-E4/51

GBPC12, GBPC15, GBPC25, GBPC35 www.vishay.com Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier GBPC-W GBPC FEATURES ~ • UL recognition file number E54214 • Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting ~ • Typical IR less than 0.3 μA • High surge current capability ~ • Low thermal resistance ~ • Solder dip 275 °C max. 10 s, per JESD 22-B106 ~ • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for power supply, home appliances, office equipment, industrial automation applications. ~ PRIMARY CHARACTERISTICS MECHANICAL DATA Package GBPC, GBPC-W IF(AV) 12 A, 15 A, 25 A, 35 A VRRM 50 V to 1000 V IFSM 200 A, 300 A, 300 A, 400 A IR 5 μA VF at IF 1.1 V TJ max. 150 °C Diode variations Quad Case: GBPC, GBPC-W Molding compound meets UL 94 V-0 flammability rating Base P/N-E4 - RoHS-compliant, commercial grade Terminals: Nickel plated on faston lugs or silver plated on wire leads, solderable per J-STD-002 and JESD22-B102. Suffix letter “W” added to indicate wire leads (e.g. GBPC12005W). Polarity: As marked, positive lead by beveled corner Mounting Torque: 20 inches-lbs. max. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GBPC12, 15, 25, 35 005 01 02 04 06 08 10 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified output current (Fig. 1) Peak forward surge current single sine-wave superimposed on rated load Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing GBPC12 12 GBPC15 15 GBPC25 IF (AV) GBPC35 35 GBPC12 200 GBPC15 GBPC25 IFSM 300 300 GBPC35 400 GBPC12 160 GBPC15 GBPC25 I2t GBPC35 RMS isolation voltage from case to leads Operating junction storage temperature range Revision: 21-Feb-14 25 375 375 V A A A2s 660 VISO 2500 V TJ, TSTG - 55 to + 150 °C Document Number: 88612 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GBPC12, GBPC15, GBPC25, GBPC35 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) TEST CONDITIONS PARAMETER Maximum instantaneous forward drop per diode GBPC12 IF = 6.0 A GBPC15 IF = 7.5 A GBPC25 IF = 12.5 A GBPC35 SYMBOL GBPC12, 15, 25, 35 005 01 02 04 06 08 10 1.1 VF UNIT V IF = 17.5 A TA = 25 °C Maximum reverse DC current at rated DC blocking voltage per diode TA = 125 °C Typical junction capacitance per diode 4 V, 1 MHz 5.0 IR μA 500 300 CJ pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GBPC12 to GBPC25 Typical thermal resistance GBPC35 GBPC12, 15, 25, 35 005 01 02 04 06 08 10 UNIT 1.9 RJC (1) °C/W 1.4 Notes (1) With heatsink (2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #10 screw ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GBPC1206-E4/51 15.79 51 100 Paper box GBPC1506-E4/51 15.79 51 100 Paper box GBPC2506-E4/51 15.79 51 100 Paper box GBPC3506-E4/51 15.79 51 100 Paper box GBPC1206W-E4/51 13.8 51 100 Paper box GBPC1506W-E4/51 13.8 51 100 Paper box GBPC2506W-E4/51 13.8 51 100 Paper box GBPC3506W-E4/51 13.8 51 100 Paper box Revision: 21-Feb-14 Document Number: 88612 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GBPC12, GBPC15, GBPC25, GBPC35 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 Bridges Mounted on 9.5 x 3.5 x 4.6" (22.9 x 8.9 x 11.7 cm) AL, Finned Plate 35 30 Peak Forward Surge Current (A) Average Forward Current (A) 40 5 x 6 x 4.9" AL, Finned Plate 25 20 5 x 4 x 3" AL, Finned Plate 15 6 x 2.2 x 2.2" AL, Finned Plate 10 60 Hz Resistive or Inductive Load 5 GBPC35 100 GBPC12 GBPC15 GBPC25 1.0 Cycle 0 10 0 25 50 75 100 125 150 175 200 10 1 Number of Cycles at 60 Hz Fig. 1 - Maximum Output Rectified Current Fig. 4 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode GBPC35 RthSA = 0.5 °C/W 30 60 Hz Resistive or Inductive Load Instantaneous Forward Current (A) 35 GBPC25 RthSA = 0.5 °C/W 25 20 GBPC15 RthSA = 1.0 °C/W 15 10 GBPC12 RthSA = 1.0 °C/W 5 0 10 20 30 40 50 60 70 80 90 TA = 150 °C TA = 125 °C 10 TA = 100 °C TA = 25 °C 1 0.1 0.4 0 100 0.5 0.6 0.8 0.7 0.9 1.0 1.1 Instantaneous Forward Voltage (V) Ambient Temperature (°C) Fig. 2 - Maximum Output Rectified Current Fig. 5 - Typical Instantaneous Forward Characteristics Per Diode 1000 80 70 Instantaneous Reverse Leakage Current (µA) Average Power Dissipation of Bridge (W) 100 Case Temperature (°C) 100 40 Average Forward Current (A) TJ = TJ Max. 0.5 ms Single Sine-Wave Capacitive Load 60 TJ = TJ Max. 50 40 Resistive or Inductive Load 30 20 10 TA = 150 °C TA = 125 °C 100 TA = 100 °C 10 1 TA = 25 °C 0.1 0 0 10 20 30 40 0 10 20 30 40 50 60 70 80 90 100 Average Output Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Maximum Power Dissipation Fig. 6 - Typical Reverse Leakage Characteristics Per Diode Revision: 21-Feb-14 Document Number: 88612 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GBPC12, GBPC15, GBPC25, GBPC35 www.vishay.com Vishay General Semiconductor 1000 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 100 10 1 0.01 10 1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 1 0.1 10 100 Reverse Voltage (V) t - Heating Time (s) Fig. 7 - Typical Junction Capacitance Per Diode Fig. 8 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) GBPC-W Hole for #10 Screw 0.220 (5.59) DIA. 0.200 (5.08) 1.135 (28.8) 1.115 (28.3) 0.732 (18.6) 0.692 (17.6) 1.135 (28.8) 1.115 (28.3) 0.24 (6.0) 0.18 (4.6) 0.042 (1.07) 0.038 (0.97) DIA. 0.310 (7.87) 0.290 (7.36) Revision: 21-Feb-14 GBPC 0.24 (6.0) 0.18 (4.6) 0.732 (18.6) 0.692 (17.6) 0.470 (11.9) 0.430 (10.9) 0.50 (12.7) 0.44 (11.7) Hole for #10 Screw 0.220 (5.59) DIA. 0.200 (5.08) 0.672 (17.1) 0.632 (16.1) 0.672 (17.1) 0.632 (16.1) 1.135 (28.8) 1.115 (28.3) AC 0.582 (14.8) 0.542 (13.8) 0.034 (0.86) 0.030 (0.76) 0.732 (18.6) 0.692 (17.6) 0.094 (2.4) DIA. 1.25 (31.8) MIN. 1.135 (28.8) 1.115 (28.3) 0.034 (0.86) 0.030 (0.76) 0.310 (7.87) 0.290 (7.36) 0.25 (6.35) 0.840 (21.3) 0.740 (18.8) Document Number: 88612 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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