GBU4A, GBU4B, GBU4D, GBU4G, GBU4J, GBU4K, GBU4M
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 VRMS
~
~
-
+
-
~
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106
+
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Case Style GBU
Case Style GBU
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for monitor, TV, printer, switching mode power supply,
adapter, audio equipment, and home appliances
applications.
PRIMARY CHARACTERISTICS
Package
GBU
IF(AV)
4.0 A
VRRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM
150 A
MECHANICAL DATA
Case: GBU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
IR
5 μA
VF at IF = 4.0 A
1.0 V
TJ max.
150 °C
Diode variations
In-line
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GBU4A GBU4B
GBU4D GBU4G
GBU4J
GBU4K
GBU4M
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking
voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward
rectified output current at
TC = 100 °C (1)
TA = 40 °C (2)
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature
range
IF(AV)
4.0
3.0
A
IFSM
150
A
I2t
93
A2s
TJ, TSTG
-55 to +150
°C
Notes
(1) Unit case mounted on 1.6" x 1.6" x 0.06" thick (4.0 cm x 4.0 cm x 0.15 cm) aluminum plate
(2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
Revision: 05-Aug-15
Document Number: 88614
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GBU4A, GBU4B, GBU4D, GBU4G, GBU4J, GBU4K, GBU4M
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL
Maximum
instantaneous forward
voltage drop per diode
4.0 A
Maximum DC reverse
current at rated DC
blocking voltage per diode
Typical junction
capacitance per diode
GBU4A GBU4B GBU4D GBU4G
VF
GBU4J
GBU4K GBU4M
UNIT
1.0
V
5.0
TA = 25 °C
μA
IR
TA = 125 °C
4 V, 1 MHz
500
CJ
57
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
GBU4A GBU4B GBU4D GBU4G
RJA (2)
22
RJC (1)
4.2
GBU4J
GBU4K GBU4M
UNIT
°C/W
Notes
(1) Units case mounted on aIuminum plate heatsink
(2) Units mounted in free air, no heatsink on PCB, 0.5" x 0.5" (12 mm x 12 mm) copper pads, 0.375" (9.5 mm) lead length
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
GBU4J-E3/45
3.857
45
20
Tube
GBU4J-E3/51
3.857
51
250
Paper tray
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
150
Heatsink Mounting, TC
1.6 x 1.6 x 0.06" Thickness
(4.0 x 4.0 x 0.15 cm) Al. Plate
Peak Forward Surge Current (A)
Average Forward Output Current (A)
4.0
3.0
2.0
1.0
P.C.B. Mounting, TA
0.47 x 0.47" (12 x 12 mm) Copper Pads
0.375" (9.5 mm) Lead Length
60 Hz Resistive or Inductive Load
TJ = TJ max.
Single Sine-Wave
100
50
1.0 Cycle
0
0
0
50
100
150
1
10
100
Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Derating Curve Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Revision: 05-Aug-15
Document Number: 88614
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GBU4A, GBU4B, GBU4D, GBU4G, GBU4J, GBU4K, GBU4M
www.vishay.com
Vishay General Semiconductor
1000
10
1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.1
0.01
0.4
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
100
10
0.6
0.8
1.0
1.2
1.4
0.1
1.6
Instantaneous Forward Voltage (V)
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 3 - Typical Forward Characteristics Per Diode
1000
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (μA)
1
TA = 150 °C
100
TA = 125 °C
TA = 100 °C
10
1
TA = 25 °C
0.1
10
1
0.01
10
20
30
40
50
60
70
80
90
0.1
0.01
100
1
0.1
10
100
t - Heating Time (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type GBU
0.020 R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.085 (2.16)
0.065 (1.65)
0.140 (3.56)
0.130 (3.30)
0.880 (22.3)
0.860 (21.8)
0.125 (3.2) x 45°
Chamfer
0.160 (4.1)
0.140 (3.5)
0.075
(1.9) R
.
9° TYP.
0.740 (18.8)
0.720 (18.3)
0.080 (2.03)
0.060 (1.52)
5° TYP.
0.100 (2.54)
0.085 (2.16)
0.080 (2.03)
0.065 (1.65)
0.050 (1.27)
0.040 (1.02)
0.190 (4.83)
0.210 (5.33)
0.710 (18.0)
0.690 (17.5)
0.085 (2.16)
0.075 (1.90)
0.026 (0.66)
0.020 (0.51)
Polarity shown on front side of case, positive lead by beveled corner
Revision: 05-Aug-15
Document Number: 88614
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000