GBUE2560-M3/P

GBUE2560 www.vishay.com Vishay General Semiconductor Low VF Single-Phase Single In-Line Bridge Rectifier FEATURES • UL recognition file number E312394 • Oxide planar chip junction • Low forward voltage drop • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Ideal for printed circuit boards ~ ~ + - • High surge current capability - ~ ~ + Case Style GBU • High case dielectric strength of 1500 VRMS • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Case Style GBU TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home applications, and white-goods applications specially or telecom power supply, high efficiency desktop PC and server SMPS. PRIMARY CHARACTERISTICS IF(AV) 25 A VRRM 600 V IFSM 350 A VF at IF = 12.5 A (125 °C) 0.75 V TJ max. 175 °C Package GBU Circuit configuration In-line MECHANICAL DATA Case: GBU Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and industrial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code GBUE2560 UNIT GBUE2560 Maximum repetitive peak reverse voltage VRRM 600 V Maximum RMS voltage VRMS 420 V Maximum DC blocking voltage VDC 600 V Maximum average forward rectified output current at TC = 140 °C TA = 25 °C Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range IO (1) 25 IO (2) 4.9 IFSM 350 A I2t 508 A2s TJ, TSTG -55 to +175 °C A Notes (1) Unit case mounted on aIuminum plate heatsink (2) Units mounted on PCB without heatsink Revision: 18-Oct-17 Document Number: 87633 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GBUE2560 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage drop per diode IF = 12.5 A Maximum DC reverse current at rated DC blocking voltage per diode VR = 600 V SYMBOL TA = 25 °C VF (1) TA = 125 °C TA = 25 °C IR (2) TA = 125 °C TYP. MAX. 0.88 0.92 0.75 - 0.1 10 27 - UNIT V μA Typical reverse recovery time IF = 0.5 A, IR =1.0 A, Irr = 0.25 A trr 280 - ns Typical junction capacitance per diode 4.0 V, 1 MHz CJ 240 - pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL GBUE2560 RθJA (1) 23 RθJC (2) 1.2 UNIT °C/W Notes (1) Without heatsink, free air (2) With heatsink ORDERING INFORMATION PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GBUE2560-M3/P 3.83 P 20 Tube 30 14.0 25 12.0 Average Power Loss (W) Average Forward Output Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) TC measured at device bottom 20 15 10 5 D = 0.5 D = 0.3 10.0 D = 0.8 D = 0.2 D = 0.1 8.0 D = 1.0 6.0 T 4.0 2.0 D = tp/T tp 10 12 0.0 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 1 - Derating Curve Output Rectified Current 0 2 4 6 8 14 Average Forward Current (A) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 18-Oct-17 Document Number: 87633 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GBUE2560 www.vishay.com Vishay General Semiconductor Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TJ = 175 °C TJ = 125 °C 10 TJ = 100 °C 1 TJ = 75 °C TJ = 25 °C 0.1 TJ = -40 °C 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Junction to Ambient 10 1 0.1 0.01 0.1 1 10 100 1000 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Diode 1000 400 TJ = 175 °C Peak Forward Surge Current (A) Instantaneous Reverse Current (˩A) Instantaneous Forward Voltage (V) Fig. 3 - Typical Forward Characteristics Per Diode 100 100 TJ = 125 °C 10 TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 25 °C 0.01 TJ = -40 °C 0.001 8.3 ms single half sine-wave 300 200 100 0 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode 1 10 100 Number of Cycles at 60 Hz Fig. 7 - Peak Forward Surge Current Junction Capacitance (pF) 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 1 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode Revision: 18-Oct-17 Document Number: 87633 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GBUE2560 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) GBU 0.020 R (TYP.) 0.310 (7.9) 0.290 (7.4) 0.085 (2.16) 0.065 (1.65) 0.140 (3.56) 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.125 (3.2) x 45° Chamfer 0.160 (4.1) 0.140 (3.5) 0.075 (1.9) R . 9° TYP. 0.740 (18.8) 0.720 (18.3) 0.080 (2.03) 0.060 (1.52) 5° TYP. 0.100 (2.54) 0.085 (2.16) 0.080 (2.03) 0.065 (1.65) 0.050 (1.27) 0.040 (1.02) 0.190 (4.83) 0.210 (5.33) 0.710 (18.0) 0.690 (17.5) 0.085 (2.16) 0.075 (1.90) 0.026 (0.66) 0.020 (0.51) Polarity shown on front side of case, positive lead by beveled corner Revision: 18-Oct-17 Document Number: 87633 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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