GCDA15C-1
Vishay Semiconductors
Low Capacitance Bidirectional ESD Protection Diode in SOT143
3D Top View
Pinning-Schematic
Features
• 1-line ESD protection silicon diode
• ESD Immunity ± 30 kV
e3
(acc. IEC 61000-4-2)
• Very low capacitance < 2 pF
• Bidirectional, Symmetrical clamping behaviour
(BiSy)
• Working Voltage ± 15 V
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
3
2
1
4
20075
3D Bottom View
Marking
GC1 = Type code
V 9 = date code year
32 = date code week
20074
Ordering Information
Device Name
GCDA15C-1
Ordering Code
Taped Units per Reel
Reels per Carton Box
GCDA15C-1-GS08
3000 (per 7" reel (8 mm tape))
5
Package Data
Name
SOT143
Molding Compound
Flammability Rating
Soldering Conditions
Weight
Marking Code
UL 94 V-0
260 °C/10 s at terminals
8 mg
GC1
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Test Conditions
Symbol
Value
Peak Pulse Current
Parameter
acc. IEC 61000-4-5, 8/20 µs / single shot
IPP
10
A
Peak Pulse Power
acc. IEC 61000-4-5, 8/20 µs / single shot
PPP
300
W
ESD Voltage Immunity
acc. IEC 61000-4-2 / 10 pulses
VESD
± 30
kV
Operating Temperature
Junction Temperature
Tj
- 40 to + 125
°C
TSTG
- 55 to + 150
°C
Storage Temperature
Document Number 85856
Rev. 1.2, 17-Mar-06
Unit
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1
GCDA15C-1
Vishay Semiconductors
BiSy-mode (1-line Bidirectional Symmetrical protection mode)
The GCDA15C-1 is a 1-line Bidirectional, Symmetrical (BiSy) protection device. Two avalanche diodes each
in series with a PN-Diode providing a very low capacitance. Due to its symmetry the electrical performance is
also symmetrical. For an optimal ESD-protection the line inductance of the protection path (current path from
the data line (L1) through the protection device to ground) has to be minimized. For this the data line which has
to be protected should be led trough the GCDA15C-1 - one pin (e.g. Pin 3) “in” and the other pin (e.g. Pin 2)
“out”. The Ground pins (e.g.Pin 1 and 4) should be connected to ground on the shortest and broadest way to
keep the inductance as low as possible!
L1
20073
Electrical Characteristics
BiSy mode (between Pin 2 + 3 and 1 + 4)
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ.
at IR = 0.1 µA
VRWM
15
16.5
at VR = VRWM = 15 V
IR
Reverse Working Voltage
Reverse Current
Max
Unit
< 0.001
0.1
µA
V
V
Reverse Clamping Voltage
at IPP = 1 A
VC
18.5
21
Reverse Clamping Voltage
at IPP = IPPM = 10 A
VC
26
30
at IR = 1 mA
VR
Capacitance
at VR = 0 V, f = 1 MHz
CD
1.5
Capacitance
at VR = 15 V, f = 1 MHz
CD
1.3
pF
ESD-Clamping voltage peak
at ± 8 kV ESD-pulse acc. IEC 61000-4-2
VCESD
130
V
Protection paths
number of lines which can be protected
Nlines
1
lines
Reverse Break down Voltage
16
V
17
V
2
pF
Typical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
1.8
8 µs to 100 %
f = 1MHz
100 %
1.6
1.4
60 %
CD in pF
IPPM
80 %
20 µs to 50 %
40 %
1.2
1.0
0.8
0.6
0.4
20 %
valide for both polarities:
Pin 2 + 3 to Pin 1 + 4
and vice versa
0.2
0%
0.0
0
20063
10
20
30
Time in µs
Figure 1. 8/20 µs Peak Pulse Current wave form
acc. IEC 61000-4-5
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2
0
40
20064
4
8
12
16
VR in V
Figure 2. Typical Capacitance CD vs. Reverse Voltage VR
Document Number 85856
Rev. 1.2, 17-Mar-06
GCDA15C-1
Vishay Semiconductors
20
40
18
20
16
0
VC-ESD in V
14
12
VR in V
acc. IEC 61000-4-2
- 8 kV
contact discharge
10
- 20
- 40
- 60
8
- 80
6
- 100
4
valide for both polarities:
Pin 2 + 3 to Pin 1 + 4
and vice versa
2
0
0.01
0.1
1
10
100
- 140
- 10 0
1000 10000
Figure 3. Typical Reverse Voltage VR vs. Reverse Current IR
t in ns
Figure 6. Typical Clamping performance at 8 kV contact discharge
(acc. IEC 61000-4-2)
400
35
valide for both polarities:
Pin 2 + 3 to Pin 1 + 4
and vice versa
30
acc. IEC 61000-4-2
contact discharge
350
valide for both polarities:
Pin 2 + 3 to Pin 1 + 4
and vice versa
300
20
VC
15
10
VC-ESD in V
25
VC in V
10 20 30 40 50 60 70 80 90
20068
IR in µA
20065
valide for both polarities:
Pin 2 + 3 to Pin 1 + 4
and vice versa
- 120
250
200
150
VC-ESD
100
5
Measured acc. IEC 61000-4-5
(8/20 µs - wave form)
50
0
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
IPP in A
20066
Figure 4. Typical peak clamping voltage VC vs.
peak pulse current IPP
140
0
20069
5
10
15
20
25
30
VESD in kV
Figure 7. Typical peak clamping voltage at ESD contact discharge
(acc. IEC 61000-4-2)
acc. IEC 61000-4-2
+ 8 kV
contact discharge
120
VC-ESD in V
100
80
60
40
20
0
valide for both polarities:
Pin 2 + 3 to Pin 1 + 4
and vice versa
- 20
- 40
- 10 0
10 20 30 40 50 60 70 80 90
20067
t in ns
Figure 5. Typical Clamping performance at 8 kV contact discharge
(acc. IEC 61000-4-2)
Document Number 85856
Rev. 1.2, 17-Mar-06
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3
GCDA15C-1
Vishay Semiconductors
Package Dimensions in mm (Inches) SOT143
19730
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4
Document Number 85856
Rev. 1.2, 17-Mar-06
GCDA15C-1
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85856
Rev. 1.2, 17-Mar-06
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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