GI506-E3/54

GI500, GI501, GI502, GI504, GI506, GI508, GI510 www.vishay.com Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DO-201AD TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes application. PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 100 A IR 5.0 μA VF 1.1 V TJ max. 150 °C Package DO-201AD Diode variations Single die Note • These devices are not AEC-Q101 qualified. MECHANICAL DATA Case: DO-201AD, molded epoxy body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GI500 GI501 GI502 GI504 GI506 GI508 GI510 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 95 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A TJ, TSTG - 50 to + 150 °C Operating junction and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage TEST CONDITIONS SYMBOL TJ = 25 °C GI500 GI501 GI502 GI504 GI508 GI510 UNIT 1.1 VF 9.4 A GI506 TJ = 175 °C V 1.0 TA = 25 °C 5.0 IR TA = 100 °C μA 50 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.0 μs Typical junction capacitance 4.0 V, 1 MHz CJ 28 pF Revision: 01-Aug-13 Document Number: 88626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GI500, GI501, GI502, GI504, GI506, GI508, GI510 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance GI500 GI501 GI502 GI504 RJA (1) 20 RJL (1) 5.0 GI506 GI508 GI510 UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted with 0.8" x 0.8" (20 mm x 20 mm) copper heatsinks ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GI506-E3/54 1.1 54 1400 13" diameter paper tape and reel GI506-E3/73 1.1 73 1000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) L= 100 L = 0.31" (7.9 mm) 0.2 5" 7.0 (6. 3m TL = Both Leads to Heat Sink Mounted Length (L) as Shown m) 6.0 L= 5.0 0.5 0" (1 2.7 mm 60 Hz Resistive or Inductive Load ) 4.0 3.0 2.0 TA = Ambient Temperature 0.375" (9.5 mm) Lead Length P.C.B. Mounted 1.0 Instantaneous Forward Current (A) Average Forward Rectified Current (A) 8.0 40 60 80 100 120 140 160 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 0.1 0.6 0.8 1.0 1.2 1.6 1.4 1.8 Lead Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 1000 100 TJ = 150 °C 8.3 ms Single Half Sine-Wave Instantaneous Reverse Current (μA) Peak Forward Surge Current (A) 1 0.01 0.4 0 20 10 100 Non-Repetitive Repetitive 10 10 TJ = 150 °C 1 TJ = 100 °C 0.1 TJ = 25 °C 0.01 1 10 100 0 20 40 60 80 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics Revision: 01-Aug-13 100 Document Number: 88626 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GI500, GI501, GI502, GI504, GI506, GI508, GI510 www.vishay.com Vishay General Semiconductor 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 100 10 1 0.1 1 10 10 1 0.1 0.01 100 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Revision: 01-Aug-13 Document Number: 88626 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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