GIB1401, GIB1402, GIB1403, GIB1404
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Vishay General Semiconductor
Ultrafast Plastic Rectifier
FEATURES
TO-263AB
• Power pack
• Glass passivated pallet chip junction
K
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low leakage current
2
• High forward surge capability
1
PIN 2
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
K
PIN 1
HEATSINK
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, inverters, freewheeling diodes, DC/DC converters,
and other power switching application.
PRIMARY CHARACTERISTICS
IF(AV)
8.0 A
VRRM
50 V, 100 V, 150 V, 200 V
IFSM
125 A
MECHANICAL DATA
Case: TO-263AB
trr
35 ns
VF
0.895 V
TJ max.
150 °C
Package
TO-263AB
Diode variation
Single die
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GIB1401
GIB1402
GIB1403
GIB1404
UNIT
Max. repetitive peak reverse voltage
VRRM
50
100
150
200
V
Max. RMS voltage
VRMS
35
70
105
140
V
Max. DC blocking voltage
VDC
50
100
150
200
V
Max. average forward rectified current at TC = 125 °C
IF(AV)
8.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
125
A
TJ, TSTG
-65 to +150
°C
Operating and storage temperature range
Revision: 23-Feb-15
Document Number: 88632
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GIB1401, GIB1402, GIB1403, GIB1404
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Max. instantaneous forward voltage
IF = 4 A
TJ = 25 °C
IF = 8 A
TJ = 25 °C
IF = 4
TJ = 100 °C
IF = 8 A
TJ = 100 °C
TC = 25 °C
Max. DC reverse current at rated DC
blocking voltage
TC = 100 °C
SYMBOL
GIB1401
GIB1402
GIB1403
GIB1404
UNIT
0.900
0.975
VF
V
0.800
0.895
5.0
IR
μA
150
Max. reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
35
ns
Typical junction capacitance
4 V, 1 MHz
CJ
85
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance (1)
GIB1401
RJC
GIB1402
GIB1403
GIB1404
2.25
UNIT
°C/W
Note
(1) Thermal resistance from junction to case mounted on heatsink
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-263AB
GIB1401-E3/45
TO-263AB
GIB1401-E3/81
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.33
45
50/tube
Tube
1.33
81
900/reel
Tape and reel
TO-263AB
GIB1401HE3/45
(1)
1.33
45
50/tube
Tube
TO-263AB
GIB1401HE3/81 (1)
1.33
81
900/reel
Tape and reel
Note
AEC-Q101 qualified
(1)
Revision: 23-Feb-15
Document Number: 88632
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GIB1401, GIB1402, GIB1403, GIB1404
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Resistive or Inductive Load
Instantaneous Reverse Leakage
Current (µA)
Average Forward Rectified Current (A)
12
10
Infinite Heatsink Mounting, TC
8
6
Free Air Rating, TA
P.C.B. Mounting
4
2
0
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0
25
50
75
100
125
150
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
1000
150
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TC = 125 °C
8.3 ms Single Half Sine-Wave
125
Junction Capacitance (pF)
Peak Forward Surge Current (A)
TJ = 125 °C
10
100
75
50
25
0
100
10
1
10
100
0.1
1
10
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
Instantaneous Forward Current (A)
100
TJ = 125 °C
TJ = 25 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 23-Feb-15
Document Number: 88632
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GIB1401, GIB1402, GIB1403, GIB1404
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 23-Feb-15
Document Number: 88632
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 09-Jul-2021
1
Document Number: 91000