GIB2401, GIB2402, GIB2403, GIB2404
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Ultrafast Plastic Rectifier
FEATURES
D2PAK (TO-263AB)
• Power pack
• Glass passivated chip junction
K
• Ultrafast recovery time
• Low switching losses, high efficiency
2
• High forward surge capability
1
PIN 1
PIN 2
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
K
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
HEATSINK
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
TYPICAL APPLICATIONS
3D Models
For use in high frequency rectifier of switching mode power
supplies, inverters, freewheeling diodes, DC/DC converters,
and other power switching application.
PRIMARY CHARACTERISTICS
IF(AV)
16 A
MECHANICAL DATA
VRRM
50 V, 100 V, 150 V, 200 V
Case: D2PAK (TO-263AB)
IFSM
125 A
trr
35 ns
VF
0.895 V
TJ max.
150 °C
Package
D2PAK (TO-263AB)
Circuit configurations
Common cathode
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GIB2401 GIB2402 GIB2403 GIB2404
Max. repetitive peak reverse voltage
VRRM
50
100
150
200
UNIT
V
Max. RMS voltage
VRMS
35
70
105
140
V
Max. DC blocking voltage
VDC
50
100
150
200
V
Max. average forward rectified current at TC = 125 °C
IF(AV)
16
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
IFSM
125
A
TJ, TSTG
-65 to +150
°C
Operating junction and storage temperature range
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Max. instantaneous forward voltage
per diode
TEST CONDITIONS
IF = 4 A
TJ = 25 °C
IF = 8 A
TJ = 25 °C
IF = 4 A
TJ = 100 °C
IF = 8 A
TJ = 100 °C
TC = 25 °C
Max. DC reverse current per diode at
rated DC blocking voltage
TC = 100 °C
SYMBOL GIB2401 GIB2402 GIB2403 GIB2404
UNIT
0.900
0.975
VF
V
0.800
0.895
IR
50
5.0
150
500
μA
Max. reverse recovery time
IF = 0.5 A, IR = 1.0 A,Irr = 0.25 A
trr
35
ns
Typical junction capacitance per diode
4 V, 1 MHz
CJ
85
pF
Revision: 24-Jun-2019
Document Number: 88633
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GIB2401, GIB2402, GIB2403, GIB2404
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode (1)
GIB2401
GIB2402
RJC
GIB2403
GIB2404
UNIT
1.2
°C/W
Note
(1) Thermal resistance from junction to case per leg mounted on heatsink
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-263AB
GIB2401-E3/45
PREFERRED P/N
1.35
45
50/tube
DELIVERY MODE
Tube
TO-263AB
GIB2401-E3/81
1.35
81
900/reel
Tape and reel
TO-263AB
GIB2401HE3_A/P (1)
1.35
P
50/tube
Tube
TO-263AB
GIB2401HE3_A/I (1)
1.35
I
900/reel
Tape and reel
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Instantaneous Forward Current (A)
Average Forward Rectified Current (A)
20
Resistive or Inductive Load
16
Infinite Heatsink, TC
12
8
Ambient Air Rating, TA
4
0
25
50
75
100
125
150
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
150
100
TC = 125 °C
8.3 ms Single Half Sine-Wave
125
Instantaneous Reverse Leakage
Current (µA)
Peak Forward Surge Current (A)
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.2
0
TJ = 25 °C
TJ = 125 °C
10
100
75
50
25
TJ = 125 °C
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0
0.01
1
10
100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics
Per Diode
Revision: 24-Jun-2019
Document Number: 88633
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GIB2401, GIB2402, GIB2403, GIB2404
www.vishay.com
Vishay General Semiconductor
Junction Capacitance (pF)
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 24-Jun-2019
Document Number: 88633
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2023
1
Document Number: 91000
