GSD2004WS
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Vishay Semiconductors
Small Signal Switching Diode, High Voltage
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode, especially suited for
applications requiring high voltage capability
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
DESIGN SUPPORT TOOLS click logo to get started
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Models
Available
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
GSD2004WS
ORDERING CODE
CIRCUIT CONFIGURATION
TYPE MARKING
REMARKS
Single
B6
Tape and reel
GSD2004WS-E3-08 or GSD2004WS-E3-18
GSD2004WS-HE3-08 or GSD2004WS-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Continuous reverse voltage
Repetitive peak reverse voltage
Forward current (continuous)
Peak repetitive forward current
Non-repetitive peak forward current
SYMBOL
VALUE
UNIT
VR
240
V
VRRM
300
V
IF
225
mA
IFRM
625
mA
tp = 1 μs
IFSM
4
A
tp = 1 s
IFSM
1
A
Ptot
200
mW
SYMBOL
VALUE
UNIT
RthJA
650
K/W
Power dissipation (1)
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Typical thermal resistance junction to
ambient air (1)
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-65 to +150
°C
Operating temperature range
Top
-55 to +150
°C
Note
(1) Valid provided that electrodes are kept at ambient temperature
Rev. 2.1, 14-Jul-17
Document Number: 85730
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSD2004WS
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
IR = 100 μA
VBR
300
VR = 240 V
IR
Reverse breakdown voltage
Leakage current
VR = 240 V, Tj = 150 °C
IR
IF = 20 mA
VF
IF = 100 mA
MAX.
UNIT
100
nA
100
μA
V
0.87
V
VF
1
V
VF = VR = 0, f = 1 MHz
CD
5
pF
IF = IR = 30 mA, iR = 3 mA,
RL = 100 Ω
trr
50
ns
Forward voltage
Diode capacitance
Reverse recovery time
TYP.
0.83
Ptot - Admissible Power Dissipation (mW)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
I F - Forward Current (mA)
1000
Tj = 100 °C
100
10
25 °C
1
0.1
0.01
0
0.2
0.4
0.6
0.8
100
50
0
0
20 40 60 80 100 120 140 160 180 200
Tamb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
0.3
1000
IR(Tj)/IR (25 °C) - Leakage Current
I O , I F - Admissible Forward Current (A)
150
18864
Fig. 1 - Forward Current vs. Forward Voltage
0.2
DC current IF
Current (rectif.) I O
0.1
0
0
18859
200
1
VF - Forward Voltage (V)
18858
250
30
60
90
120
150
Tamb - Ambient Temperature (°C)
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
100
10
1
Reverse Voltage
GSD2004WS VR = 240 V
0.1
0
18862_4
40
80
120
160
Tj - Junction Temperature (°C)
200
Fig. 4 - Leakage Current vs. Junction Temperature
Rev. 2.1, 14-Jul-17
Document Number: 85730
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSD2004WS
www.vishay.com
Vishay Semiconductors
2.0
TJ = 25 °C
C D - Diode Capacitance (pF)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
22729
1
10
VR - Reverse Voltage (V)
100
Fig. 5 - Capacitance vs. Reverse Voltage
0.1 [0.004] max.
0.15 [0.006]
0.10 [0.004]
0.2 [0.008]
0.8 [0.031]
1.15 [0.045]
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0° - 8°
0.40 [0.016]
0.25 [0.010]
1.95 [0.077]
2.50 [0.098]
1.1 [0.043]
0.20 [0.008]
0.40 [0.016]
2.85 [0.112]
1.5 [0.059]
1.60 [0.063]
Cathode bar
Footprint recommendation:
1.6 [0.063]
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443
0.8 [0.031]
0.6 [0.024]
0.8 [0.031]
Rev. 2.1, 14-Jul-17
Document Number: 85730
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000
