GSIB2520N, GSIB2540N, GSIB2560N, GSIB2580N
www.vishay.com
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214
• Thin single in-Iine package
• Glass passivated chip junction
~
~
• High surge current capability
~
~
• High case dielectric strength of 2500 VRMS
Case Style GSIB-5S
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
3D 3D
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, industrial automation applications.
3D Models
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
25 A
VRRM
200 V, 400 V, 600 V, 800 V
IFSM
350 A
IR
10 μA
VF at IF = 12.5 A
1.0 V
TJ max.
150 °C
Package
GSIB-5S
Circuit configuration
In-line
Case: GSIB-5S
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked on body
Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum
Recommended Torque: 5.7 cm-kg (5 in-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GSIB2520N
GSIB2540N
GSIB2560N
GSIB2580N
UNIT
Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
V
Maximum RMS voltage
VRMS
140
280
420
560
V
VDC
200
400
600
800
V
Maximum DC blocking voltage
Maximum average forward rectified
output current at
TC = 98 °C
IF(AV) (1)
25
TA = 25 °C
IF(AV) (2)
3.5
IFSM
350
A
I2t
500
A2s
TJ, TSTG
-55 to +150
°C
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
A
Notes
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on PCB without heatsink
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage drop per diode
IF = 12.5 A
Maximum DC reverse current at
rated DC blocking voltage per diode
TA = 125 °C
TA = 25 °C
SYMBOL
GSIB2520N GSIB2540N GSIB2560N GSIB2580N
UNIT
VF
1.0
V
IR
10
350
μA
Revision: 09-Jul-2020
Document Number: 89389
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSIB2520N, GSIB2540N, GSIB2560N, GSIB2580N
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GSIB2520N GSIB2540N GSIB2560N GSIB2580N
RJA (2)
22
RJC (1)
1.0
Maximum thermal resistance
UNIT
°C/W
Notes
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on PCB without heatsink
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
GSIB2560N-M3/45
7.0
45
20
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Instantaneous Forward Current (A)
Average Forward Output Current (A)
30
Heatsink Mounting, TC
25
20
15
10
5
PCB Mounting, TA
25
50
75
100
125
150
0.1
0.8
1.0
1.2
1.4
Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 3 - Typical Forward Characteristics Per Diode
1000
Instantaneous Reverse Current (µA)
400
Peak Forward Surge Current (A)
1
0.01
0.6
0
0
10
350
300
200
150
100
50
1.0 Cycle
TA = 125 °C
100
10
1
TA = 25 °C
0.1
0
1
10
100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 09-Jul-2020
Document Number: 89389
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSIB2520N, GSIB2540N, GSIB2560N, GSIB2580N
www.vishay.com
Vishay General Semiconductor
10
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
1000
100
10
1
1
1
10
0.1
0.01
100
0.1
1
10
Reverse Voltage (V)
t - Heating Time (s)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style GSIB-5S
4.6 ± 0.2
3.5 ± 0.2
11 ± 0.2
20 ± 0.3
5
+
3.2 ± 0.2
3.6 ± 0.2
30 ± 0.3
2.2 ± 0.2
1 ± 0.1
10 ± 0.2
7.5
± 0.2
7.5
± 0.2
2.7 ± 0.2
17.5 ± 0.5
4 ± 0.2
2.5 ± 0.2
0.7 ± 0.1
Revision: 09-Jul-2020
Document Number: 89389
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
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Revision: 01-Jan-2023
1
Document Number: 91000
