GSIB2560-E3/45

GSIB2520, GSIB2540, GSIB2560, GSIB2580 www.vishay.com Vishay General Semiconductor Single-Phase Single In-Line Bridge Rectifiers FEATURES • UL recognition file number E54214 • Thin single in-line package • Glass passivated chip junction • High surge current capability • High case dielectric strength of 2500 VRMS ~ • Solder dip 275 °C max. 10 s, per JESD 22-B106 ~ ~ ~ • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Case Style GSIB-5S TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, office equipment, industrial automation applications. PRIMARY CHARACTERISTICS Package GSIB-5S IF(AV) 25 A VRRM 200 V, 400 V, 600 V, 800 V IFSM 350 A IR 10 μA VF at IF = 12.5 V 1.0 V TJ max. 150 °C Diode variations In-Line MECHANICAL DATA Case: GSIB-5S Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GSIB2520 GSIB2540 GSIB2560 GSIB2580 UNIT Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V Maximum RMS voltage VRMS 140 280 420 560 V Maximum DC blocking voltage VDC 200 400 600 800 V Maximum average forward rectified output current at TC = 98 °C (1) TA = 25 °C (2) Peak forward surge current single sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range 25 IF(AV) A 3.5 IFSM 350 A I2t 500 A2s TJ, TSTG -55 to +150 °C Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB without heatsink ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode TEST CONDITIONS SYMBOL 12.5 A TA = 25 °C TA = 125 °C VF IR GSIB2520 GSIB2540 GSIB2560 1.00 10 350 GSIB2580 UNIT V μA Revision: 13-Jun-14 Document Number: 88646 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSIB2520, GSIB2540, GSIB2560, GSIB2580 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance GSIB2520 GSIB2540 GSIB2560 RJA (2) 22 RJC (1) 1.0 GSIB2580 UNIT °C/W Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB without heatsink (3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GSIB2560-E3/45 7.0 45 20 Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Instantaneous Forward Current (A) Average Forward Output Current (A) 30 Heatsink Mounting, TC 25 20 15 10 5 P.C.B. Mounting, TA TA = 150 °C 10 TA = 125 °C TA = 100 °C TA = 85 °C 1 TA = 25 °C 0.1 0 0.4 0 25 50 75 100 125 150 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Instantaneous Forward Voltage (V) Temperature (°C) Fig. 3 - Typical Forward Characteristics Per Diode Fig. 1 - Derating Curve Output Rectified Current 1000 Instantaneous Reverse Current (µA) 400 Peak Forward Surge Current (A) 0.5 350 300 200 150 100 50 1.0 Cycle TA = 125 °C 100 10 1 TA = 25 °C 0.1 0 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 13-Jun-14 Document Number: 88646 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSIB2520, GSIB2540, GSIB2560, GSIB2580 www.vishay.com Vishay General Semiconductor 10 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 1000 100 10 0.1 0.01 1 1 10 1 100 0.1 1 10 Reverse Voltage (V) t - Heating Time (s) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance  PACKAGE OUTLINE DIMENSIONS in millimeters Case Style GSIB-5S 4.6 ± 0.2 3.5 ± 0.2 11 ± 0.2 20 ± 0.3 5 + 3.2 ± 0.2 3.6 ± 0.2 30 ± 0.3 2.2 ± 0.2 1 ± 0.1 10 ± 0.2 7.5 ± 0.2 7.5 ± 0.2 2.7 ± 0.2 17.5 ± 0.5 4 ± 0.2 2.5 ± 0.2 0.7 ± 0.1 Revision: 13-Jun-14 Document Number: 88646 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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