GSIB2560N-M3/45

GSIB2520N, GSIB2540N, GSIB2560N, GSIB2580N www.vishay.com Vishay General Semiconductor Single-Phase Single In-Line Bridge Rectifiers FEATURES • UL recognition file number E54214 • Thin single in-Iine package • Glass passivated chip junction ~ ~ • High surge current capability ~ ~ • High case dielectric strength of 2500 VRMS Case Style GSIB-5S • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D 3D General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, office equipment, industrial automation applications. 3D Models PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 25 A VRRM 200 V, 400 V, 600 V, 800 V IFSM 350 A IR 10 μA VF at IF = 12.5 A 1.0 V TJ max. 150 °C Package GSIB-5S Circuit configuration In-line Case: GSIB-5S Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked on body Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum Recommended Torque: 5.7 cm-kg (5 in-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GSIB2520N GSIB2540N GSIB2560N GSIB2580N UNIT Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V Maximum RMS voltage VRMS 140 280 420 560 V VDC 200 400 600 800 V Maximum DC blocking voltage Maximum average forward rectified output current at TC = 98 °C IF(AV) (1) 25 TA = 25 °C IF(AV) (2) 3.5 IFSM 350 A I2t 500 A2s TJ, TSTG -55 to +150 °C Peak forward surge current single sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range A Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB without heatsink ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage drop per diode IF = 12.5 A Maximum DC reverse current at rated DC blocking voltage per diode TA = 125 °C TA = 25 °C SYMBOL GSIB2520N GSIB2540N GSIB2560N GSIB2580N UNIT VF 1.0 V IR 10 350 μA Revision: 09-Jul-2020 Document Number: 89389 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSIB2520N, GSIB2540N, GSIB2560N, GSIB2580N www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GSIB2520N GSIB2540N GSIB2560N GSIB2580N RJA (2) 22 RJC (1) 1.0 Maximum thermal resistance UNIT °C/W Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB without heatsink (3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GSIB2560N-M3/45 7.0 45 20 Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Forward Current (A) Average Forward Output Current (A) 30 Heatsink Mounting, TC 25 20 15 10 5 PCB Mounting, TA 25 50 75 100 125 150 0.1 0.8 1.0 1.2 1.4 Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Derating Curve Output Rectified Current Fig. 3 - Typical Forward Characteristics Per Diode 1000 Instantaneous Reverse Current (µA) 400 Peak Forward Surge Current (A) 1 0.01 0.6 0 0 10 350 300 200 150 100 50 1.0 Cycle TA = 125 °C 100 10 1 TA = 25 °C 0.1 0 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 09-Jul-2020 Document Number: 89389 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSIB2520N, GSIB2540N, GSIB2560N, GSIB2580N www.vishay.com Vishay General Semiconductor 10 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 1000 100 10 1 1 1 10 0.1 0.01 100 0.1 1 10 Reverse Voltage (V) t - Heating Time (s) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style GSIB-5S 4.6 ± 0.2 3.5 ± 0.2 11 ± 0.2 20 ± 0.3 5 + 3.2 ± 0.2 3.6 ± 0.2 30 ± 0.3 2.2 ± 0.2 1 ± 0.1 10 ± 0.2 7.5 ± 0.2 7.5 ± 0.2 2.7 ± 0.2 17.5 ± 0.5 4 ± 0.2 2.5 ± 0.2 0.7 ± 0.1 Revision: 09-Jul-2020 Document Number: 89389 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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