GSIB2580-E3

GSIB2520N, GSIB2540N, GSIB2560N, GSIB2580N www.vishay.com Vishay General Semiconductor Single-Phase Single In-Line Bridge Rectifiers FEATURES • UL recognition file number E54214 • Thin single in-Iine package • Glass passivated chip junction • High surge current capability • High case dielectric strength of 2500 VRMS ~ ~ • Solder dip 275 °C max. 10 s, per JESD 22-B106 ~ ~ • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Case Style GSIB-5S TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, office equipment, industrial automation applications. PRIMARY CHARACTERISTICS MECHANICAL DATA Package GSIB-5S IF(AV) 25 A VRRM 200 V, 400 V, 600 V, 800 V IFSM 350 A IR 10 μA VF at IF = 12.5 A 1.0 V TJ max. 150 °C Diode variations In-Line Case: GSIB-5S Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum Recommended Torque: 5.7 cm-kg (5 in-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GSIB2520N GSIB2540N GSIB2560N GSIB2580N UNIT Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V Maximum RMS voltage VRMS 140 280 420 560 V VDC 200 400 600 800 V Maximum DC blocking voltage Maximum average forward rectified output current at TC = 98 °C IF(AV) (1) 25 TA = 25 °C IF(AV) (2) 3.5 IFSM 350 A I2t 500 A2s TJ, TSTG - 55 to + 150 °C Peak forward surge current single sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range A Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB without heatsink Revision: 26-Jun-13 Document Number: 89389 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSIB2520N, GSIB2540N, GSIB2560N, GSIB2580N www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage drop per diode IF = 12.5 A Maximum DC reverse current at rated DC blocking voltage per diode TA = 125 °C TA = 25 °C SYMBOL GSIB2520N GSIB2540N GSIB2560N GSIB2580N UNIT VF 1.0 V 10 IR μA 350 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum thermal resistance SYMBOL GSIB2520N GSIB2540N GSIB2560N GSIB2580N RJA (2) 22 RJC (1) 1.0 UNIT °C/W Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB without heatsink (3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GSIB2560N-M3/45 7.0 45 20 Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 400 Heatsink Mounting, TC Peak Forward Surge Current (A) Average Forward Output Current (A) 30 25 20 15 10 5 PCB Mounting, TA 0 350 300 200 150 100 50 1.0 Cycle 0 0 25 50 75 100 125 150 1 10 100 Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 26-Jun-13 Document Number: 89389 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSIB2520N, GSIB2540N, GSIB2560N, GSIB2580N www.vishay.com Vishay General Semiconductor 1000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 1 0.1 0.01 0.6 100 10 1 0.8 1.0 1.2 1 1.4 100 Reverse Voltage (V) Fig. 3 - Typical Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 1000 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 10 Instantaneous Forward Voltage (V) TA = 125 °C 100 10 1 TA = 25 °C 1 0.1 0.01 0.1 0 20 40 60 80 100 0.1 1 10 Percent of Rated Peak Reverse Voltage (%) t - Heating Time (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style GSIB-5S 4.6 ± 0.2 3.5 ± 0.2 11 ± 0.2 20 ± 0.3 5 + 3.2 ± 0.2 3.6 ± 0.2 30 ± 0.3 2.2 ± 0.2 1 ± 0.1 10 ± 0.2 Revision: 26-Jun-13 7.5 ± 0.2 7.5 ± 0.2 2.7 ± 0.2 17.5 ± 0.5 4 ± 0.2 2.5 ± 0.2 0.7 ± 0.1 Document Number: 89389 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000