GSOT05-HT3-GS08

GSOT03-HT3 to GSOT36-HT3 Vishay Semiconductors Single-Line ESD-Protection in LLP75 Features Circuit Diagram • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 ± 30 kV contact discharge e3 ± 30 kV air discharge • Space saving LLP package • Lead (Pb)-free component • Lead finish = "e3" = matte tin (Sn) • Non-magnetic • "Green" molding compound • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 20514 20417 1 Marking (example only) XX YY Dot = Pin 1 marking XX = Date code YY = Type code (see table below) 21001 Ordering Information Ordering code Taped units per reel (8 mm tape on 7" reel) Minimum order quantity GSOT03-HT3 GSOT03-HT3-GS08 3000 15000 GSOT04-HT3 GSOT04-HT3-GS08 3000 15000 GSOT05-HT3 GSOT05-HT3-GS08 3000 15000 GSOT08-HT3 GSOT08-HT3-GS08 3000 15000 GSOT12-HT3 GSOT12-HT3-GS08 3000 15000 GSOT15-HT3 GSOT15-HT3-GS08 3000 15000 GSOT24-HT3 GSOT24-HT3-GS08 3000 15000 GSOT36-HT3 GSOT36-HT3-GS08 3000 15000 Device name Package Data Package name Marking code Weight Molding compound flammability rating Moisture sensitivity level Soldering conditions GSOT03-HT3 LLP75-3B A3 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals GSOT04-HT3 LLP75-3B A4 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals GSOT05-HT3 LLP75-3B A5 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals GSOT08-HT3 LLP75-3B A6 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals GSOT12-HT3 LLP75-3B A7 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals GSOT15-HT3 LLP75-3B A8 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals GSOT24-HT3 LLP75-3B A9 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals GSOT36-HT3 LLP75-3B AA 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals Device name Document Number 85822 Rev. 1.8, 21-Apr-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 1 GSOT03-HT3 to GSOT36-HT3 Vishay Semiconductors Absolute Maximum Ratings GSOT03-HT3 Rating Test condition Symbol Value Unit Peak pulse current Pin 3 to 1 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 30 A Peak pulse power Pin 3 to 1 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 369 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Junction temperature TJ - 40 to + 125 °C TSTG - 55 to + 150 °C Test condition Symbol Value Unit Peak pulse current Pin 3 to 1 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 30 A Peak pulse power Pin 3 to 1 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 429 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Junction temperature TJ - 40 to + 125 °C TSTG - 55 to + 150 °C Test condition Symbol Value Unit Peak pulse current Pin 3 to 1 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 30 A Peak pulse power Pin 3 to 1 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 480 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Junction temperature TJ - 40 to + 125 °C TSTG - 55 to + 150 °C Test condition Symbol Value Unit Peak pulse current Pin 3 to 1 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 18 A Peak pulse power Pin 3 to 1 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 345 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Junction temperature TJ - 40 to + 125 °C TSTG - 55 to + 150 °C ESD immunity Operating temperature Storage temperature GSOT04-HT3 Rating ESD immunity Operating temperature Storage temperature GSOT05-HT3 Rating ESD immunity Operating temperature Storage temperature GSOT08-HT3 Rating ESD immunity Operating temperature Storage temperature www.vishay.com 2 For technical support, please contact: ESD-Protection@vishay.com Document Number 85822 Rev. 1.8, 21-Apr-08 GSOT03-HT3 to GSOT36-HT3 Vishay Semiconductors GSOT12-HT3 Rating Test condition Symbol Value Unit Peak pulse current Pin 3 to 1 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 12 A Peak pulse power Pin 3 to 1 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 312 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV ESD immunity TJ - 40 to + 125 °C TSTG - 55 to + 150 °C Test condition Symbol Value Unit Peak pulse current Pin 3 to 1 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 8 A Peak pulse power Pin 3 to 1 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 230 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Junction temperature TJ - 40 to + 125 °C TSTG - 55 to + 150 °C Test condition Symbol Value Unit Peak pulse current Pin 3 to 1 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 5 A Peak pulse power Pin 3 to 1 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 235 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Junction temperature TJ - 40 to + 125 °C TSTG - 55 to + 150 °C Test condition Symbol Value Unit Peak pulse current Pin 3 to 1 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 3.5 A Peak pulse power Pin 3 to 1 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 248 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C Operating temperature Junction temperature Storage temperature GSOT15-HT3 Rating ESD immunity Operating temperature Storage temperature GSOT24-HT3 Rating ESD immunity Operating temperature Storage temperature GSOT36-HT3 Rating ESD immunity Operating temperature Storage temperature Document Number 85822 Rev. 1.8, 21-Apr-08 Junction temperature For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 3 GSOT03-HT3 to GSOT36-HT3 Vishay Semiconductors BiAs-Mode (1-line Bidirectional Asymmetrical protection mode) With the GSOTxx-HT3 one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (VRWM) the protection diode between pin 2 and pin 3 offer a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the GSOTxx-HT3 clamping behaviour is Bidirectional and Asymmetrical (BiAs). L1 3 1 2 20418 Electrical Characteristics Ratings at 25 °C ambient temperature unless otherwise specified GSOT03-HT3 BiAs mode (between pin 3 to 1) Parameter Test conditions/remarks Symbol Number of lines which can be protected Nlines Reverse stand off voltage at IR = 100 µA VRWM Reverse current at VR = 3.3 V IR Reverse break down voltage at IR = 1 mA VBR Protection paths Reverse clamping voltage Forward clamping voltage Capacitance www.vishay.com 4 Min. Typ. Max. Unit 1 lines 100 µA 3.3 4 V 4.6 V at IPP = 1 A VC 5.7 7.5 at IPP = IPPM = 30 A VC 10 12.3 V at IPP = 1 A VF 1 1.2 V 600 pF at IPP = IPPM = 30 A VF 4.5 at VR = 0 V; f = 1 MHz CD 420 at VR = 1.6 V; f = 1 MHz CD 260 For technical support, please contact: ESD-Protection@vishay.com V V pF Document Number 85822 Rev. 1.8, 21-Apr-08 GSOT03-HT3 to GSOT36-HT3 Vishay Semiconductors GSOT04-HT3 BiAs mode (between pin 3 to 1) Parameter Test conditions/remarks Symbol Number of lines which can be protected Nlines at IR = 20 µA VRWM Reverse current at VR = 4 V IR Reverse break down voltage at IR = 1 mA VBR Protection paths Reverse stand off voltage Reverse clamping voltage Forward clamping voltage Capacitance Min. Typ. Max. Unit 1 lines 20 µA 4 5 V 6.1 V at IPP = 1 A VC 7.5 9 V at IPP = IPPM = 30 A VC 11.2 14.3 V at IPP = 1 A VF 1 1.2 V 450 pF at IPP = IPPM = 30 A VF 4.5 at VR = 0 V; f = 1 MHz CD 310 at VR = 2 V; f = 1 MHz CD 200 V pF GSOT05-HT3 BiAs mode (between pin 3 to 1) Parameter Protection paths Test conditions/remarks Symbol Number of lines which can be protected Nlines Min. Typ. Max. Unit 1 lines 10 µA at IR = 10 µA VRWM Reverse current at VR = 5 V IR Reverse break down voltage at IR = 1 mA VBR at IPP = 1 A VC 7 8.7 V at IPP = IPPM = 30 A VC 12 16 V at IPP = 1 A VF 1 1.2 V at IPP = IPPM = 30 A VF 4.5 at VR = 0 V; f = 1 MHz CD 260 350 pF at VR = 2.5 V; f = 1 MHz CD 150 Test conditions/remarks Symbol Reverse stand off voltage Reverse clamping voltage Forward clamping voltage Capacitance 5 6 V 6.8 V V pF GSOT08-HT3 BiAs mode (between pin 3 to 1) Parameter Min. Typ. Max. Unit 1 lines 5 µA Number of lines which can be protected Nlines Reverse stand off voltage at IR = 5 µA VRWM Reverse current at VR = 8 V IR Reverse break down voltage at IR = 1 mA VBR at IPP = 1 A VC 10.7 13 V at IPP = IPPM = 18 A VC 15.2 19.2 V 1.2 V Protection paths Reverse clamping voltage Forward clamping voltage Capacitance Document Number 85822 Rev. 1.8, 21-Apr-08 8 9 V 10 at IPP = 1 A VF 1 at IPP = IPPM = 18 A VF 3 at VR = 0 V; f = 1 MHz CD 160 at VR = 4 V; f = 1 MHz CD 80 For technical support, please contact: ESD-Protection@vishay.com V V 250 pF pF www.vishay.com 5 GSOT03-HT3 to GSOT36-HT3 Vishay Semiconductors GSOT12-HT3 BiAs mode (between pin 3 to 1) Parameter Test conditions/remarks Symbol Number of lines which can be protected Nlines Reverse stand off voltage at IR = 1 µA VRWM Reverse current at VR = 12 V IR Reverse break down voltage at IR = 1 mA VBR Protection paths Reverse clamping voltage Forward clamping voltage Capacitance Min. Typ. Max. Unit 1 lines 1 µA 12 13.5 V 15 V at IPP = 1 A VC 15.4 18.7 V at IPP = IPPM = 12 A VC 21.2 26 V at IPP = 1 A VF 1 1.2 V 150 pF at IPP = IPPM = 12 A VF 2.2 at VR = 0 V; f = 1 MHz CD 115 at VR = 6 V; f = 1 MHz CD 50 V pF GSOT15-HT3 BiAs mode (between pin 3 to 1) Parameter Protection paths Test conditions/remarks Symbol Number of lines which can be protected Nlines Min. Typ. Max. Unit 1 lines 1 µA Reverse stand off voltage at IR = 1 µA VRWM Reverse current at VR = 15 V IR Reverse break down voltage at IR = 1 mA VBR at IPP = 1 A VC 19.4 23.5 V at IPP = IPPM = 8 A VC 24.8 28.8 V at IPP = 1 A VF 1 1.2 V at IPP = IPPM = 8 A VF 1.8 at VR = 0 V; f = 1 MHz CD 90 120 pF at VR = 7.5 V; f = 1 MHz CD 35 Test conditions/remarks Symbol Reverse clamping voltage Forward clamping voltage Capacitance 15 16.5 V 18 V V pF GSOT24-HT3 BiAs mode (between pin 3 to 1) Parameter Min. Typ. Max. Unit 1 lines 1 µA Number of lines which can be protected Nlines Reverse stand off voltage at IR = 1 µA VRWM Reverse current at VR = 24 V IR Reverse break down voltage at IR = 1 mA VBR at IPP = 1 A VC 34 41 V at IPP = IPPM = 5 A VC 41 47 V 1.2 V Protection paths Reverse clamping voltage Forward clamping voltage Capacitance www.vishay.com 6 24 27 V 30 at IPP = 1 A VF 1 at IPP = IPPM = 5 A VF 1.4 at VR = 0 V; f = 1 MHz CD 65 at VR = 12 V; f = 1 MHz CD 20 For technical support, please contact: ESD-Protection@vishay.com V V 80 pF pF Document Number 85822 Rev. 1.8, 21-Apr-08 GSOT03-HT3 to GSOT36-HT3 Vishay Semiconductors GSOT36-HT3 BiAs mode (between pin 3 to 1) Parameter Test conditions/remarks Symbol Number of lines which can be protected Nlines Reverse stand off voltage at IR = 1 µA VRWM Reverse current at VR = 36 V IR Reverse break down voltage at IR = 1 mA VBR Protection paths Reverse clamping voltage Forward clamping voltage Capacitance Min. Typ. Max. Unit 1 lines 1 µA 36 39 V 43 V at IPP = 1 A VC 49 60 at IPP = IPPM = 3.5 A VC 59 71 V at IPP = 1 A VF 1 1.2 V 65 pF at IPP = IPPM = 3.5 A VF 1.3 at VR = 0 V; f = 1 MHz CD 52 at VR = 18 V; f = 1 MHz CD 12 V V pF Package Dimensions in millimeters (inches): LLP75-3B 18057 Document Number 85822 Rev. 1.8, 21-Apr-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 7 GSOT03-HT3 to GSOT36-HT3 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 For technical support, please contact: ESD-Protection@vishay.com Document Number 85822 Rev. 1.8, 21-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1