GSOT05C-HT3-GS08

GSOT03C-HT3 to GSOT36C-HT3 Vishay Semiconductors Two-Line ESD-Protection in LLP75 Features • Two-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 ± 30 kV contact discharge e3 ± 30 kV air discharge • Space saving LLP package • Lead (Pb)-free component • Lead finish = "e3" = matte tin (Sn) • Non-magnetic • "Green" molding compound • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 20237 20514 1 Marking (example only) XX YY Dot = Pin 1 marking XX = Date code YY = Type code (see table below) 21001 Ordering Information Ordering code Taped units per reel (8 mm tape on 7" reel) Minimum order quantity GSOT03C-HT3 GSOT03C-HT3-GS08 3000 15000 GSOT04C-HT3 GSOT04C-HT3-GS08 3000 15000 GSOT05C-HT3 GSOT05C-HT3-GS08 3000 15000 GSOT08C-HT3 GSOT08C-HT3-GS08 3000 15000 GSOT12C-HT3 GSOT12C-HT3-GS08 3000 15000 GSOT15C-HT3 GSOT15C-HT3-GS08 3000 15000 GSOT24C-HT3 GSOT24C-HT3-GS08 3000 15000 GSOT36C-HT3 GSOT36C-HT3-GS08 3000 15000 Device name Package Data Device name Package name Marking code Weight Molding compound flammability rating GSOT03C-HT3 LLP75-3B 03 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals GSOT04C-HT3 LLP75-3B 04 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals GSOT05C-HT3 LLP75-3B 05 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals GSOT08C-HT3 LLP75-3B 08 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals GSOT12C-HT3 LLP75-3B 12 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals GSOT15C-HT3 LLP75-3B 15 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals GSOT24C-HT3 LLP75-3B 24 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals GSOT36C-HT3 LLP75-3B 36 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals Document Number 85825 Rev. 1.7, 21-Apr-08 Moisture sensitivity level For technical support, please contact: ESD-Protection@vishay.com Soldering conditions www.vishay.com 1 GSOT03C-HT3 to GSOT36C-HT3 Vishay Semiconductors Absolute Maximum Ratings GSOT03C-HT3 Rating Peak pulse current Peak pulse power ESD immunity Operating temperature Test condition Symbol Value Unit Pin 1 to 3 or pin 2 to 3 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 30 A Pin 1 to 2 or pin 2 to 1; pin 3 not connected Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 30 A Pin 1 to 3 or pin 2 to 3 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 369 W Pin 1 to 2 or pin 2 to 1; pin 3 not connected Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 504 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Junction temperature TJ - 40 to + 125 °C TSTG - 55 to + 150 °C Storage temperature GSOT04C-HT3 Rating Peak pulse current Peak pulse power ESD immunity Operating temperature Test condition Symbol Value Unit Pin 1 to 3 or pin 2 to 3 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 30 A Pin 1 to 2 or pin 2 to 1; pin 3 not connected Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 30 A Pin 1 to 3 or pin 2 to 3 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 429 W Pin 1 to 2 or pin 2 to 1; pin 3 not connected Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 564 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Junction temperature TJ - 40 to + 125 °C TSTG - 55 to + 150 °C Storage temperature GSOT05C-HT3 Rating Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature www.vishay.com 2 Test condition Symbol Value Unit Pin 1 to 3 or pin 2 to 3 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 30 A Pin 1 to 2 or pin 2 to 1; pin 3 not connected Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 30 A Pin 1 to 3 or pin 2 to 3 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 480 W Pin 1 to 2 or pin 2 to 1; pin 3 not connected Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 612 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C Junction temperature For technical support, please contact: ESD-Protection@vishay.com Document Number 85825 Rev. 1.7, 21-Apr-08 GSOT03C-HT3 to GSOT36C-HT3 Vishay Semiconductors GSOT08C-HT3 Rating Peak pulse current Peak pulse power ESD immunity Operating temperature Test condition Symbol Value Unit Pin 1 to 3 or pin 2 to 3 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 18 A Pin 1 to 2 or pin 2 to 1; pin 3 not connected Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 18 A Pin 1 to 3 or pin 2 to 3 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 345 W Pin 1 to 2 or pin 2 to 1; pin 3 not connected Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 400 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Junction temperature TJ - 40 to + 125 °C TSTG - 55 to + 150 °C Storage temperature GSOT12C-HT3 Rating Peak pulse current Peak pulse power ESD immunity Operating temperature Test condition Symbol Value Unit Pin 1 to 3 or pin 2 to 3 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 12 A Pin 1 to 2 or pin 2 to 1; pin 3 not connected Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 12 A Pin 1 to 3 or pin 2 to 3 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 312 W Pin 1 to 2 or pin 2 to 1; pin 3 not connected Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 337 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Junction temperature TJ - 40 to + 125 °C TSTG - 55 to + 150 °C Storage temperature GSOT15C-HT3 Rating Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Document Number 85825 Rev. 1.7, 21-Apr-08 Test condition Symbol Value Unit Pin 1 to 3 or pin 2 to 3 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 8 A Pin 1 to 2 or pin 2 to 1; pin 3 not connected Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 8 A Pin 1 to 3 or pin 2 to 3 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 230 W Pin 1 to 2 or pin 2 to 1; pin 3 not connected Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 245 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Junction temperature TJ - 40 to + 125 °C TSTG - 55 to + 150 °C For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 3 GSOT03C-HT3 to GSOT36C-HT3 Vishay Semiconductors GSOT24C-HT3 Rating Peak pulse current Peak pulse power ESD immunity Operating temperature Test condition Symbol Value Unit Pin 1 to 3 or pin 2 to 3 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 5 A Pin 1 to 2 or pin 2 to 1; pin 3 not connected Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 5 A Pin 1 to 3 or pin 2 to 3 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 235 W Pin 1 to 2 or pin 2 to 1; pin 3 not connected Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 240 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Junction temperature TJ - 40 to + 125 °C TSTG - 55 to + 150 °C Storage temperature GSOT36C-HT3 Rating Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature www.vishay.com 4 Test condition Symbol Value Unit Pin 1 to 3 or pin 2 to 3 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 3.5 A Pin 1 to 2 or pin 2 to 1; pin 3 not connected Acc. IEC 61000-4-5, tP = 8/20 µs; single shot IPPM 3.5 A Pin 1 to 3 or pin 2 to 3 Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 248 W Pin 1 to 2 or pin 2 to 1; pin 3 not connected Acc. IEC 61000-4-5, tP = 8/20 µs; single shot PPP 252 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C Junction temperature For technical support, please contact: ESD-Protection@vishay.com Document Number 85825 Rev. 1.7, 21-Apr-08 GSOT03C-HT3 to GSOT36C-HT3 Vishay Semiconductors BiAs-Mode (2-line Bidirectional Asymmetrical protection mode) With the GSOTxxC-HT3 two signal- or data-lines (L1, L2) can be protected against voltage transients. With pin 3 connected to ground and pin 1 and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (VRWM) the protection diode between pin 2 and pin 3 and between pin 1 and pin 3 offer a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the GSOTxxC-HT3 clamping behaviour is Bidirectional and Asymmetrical (BiAs). L1 L2 1 2 3 20239 If a higher surge current or Peak Pulse current (IPP) is needed, both protection diodes in the GSOTxxC-HT3 can also be used in parallel in order to "double" the performance. This offers: • double surge power = double peak pulse current (2 x IPPM) • halve line inductance = reduced clamping voltage • halve line resistance = reduced clamping voltage • double Diode Capacitance (2 x CD) • double Reverse leakage current (2 x IR) L1 1 2 3 20240 Document Number 85825 Rev. 1.7, 21-Apr-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 5 GSOT03C-HT3 to GSOT36C-HT3 Vishay Semiconductors Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified GSOT03C-HT3 BiAs mode (between pin 1 to 3 or pin 2 to 3) Parameter Test conditions/remarks Symbol Number of lines which can be protected Nlines Reverse stand off voltage at IR = 100 µA VRWM Reverse current at VR = 3.3 V IR Reverse break down voltage at IR = 1 mA VBR Protection paths Reverse clamping voltage Forward clamping voltage Capacitance Min. Typ. Max. Unit 2 lines 100 µA 3.3 4 V 4.6 V at IPP = 1 A VC 5.7 7.5 at IPP = IPPM = 30 A VC 10 12.3 V at IPP = 1 A VF 1 1.2 V 600 pF at IPP = IPPM = 30 A VF 4.5 at VR = 0 V; f = 1 MHz CD 420 at VR = 1.6 V; f = 1 MHz CD 260 V V pF GSOT04C-HT3 BiAs mode (between pin 1 to 3 or pin 2 to 3) Parameter Test conditions/remarks Symbol Number of lines which can be protected Nlines at IR = 20 µA VRWM Reverse current at VR = 4 V IR Reverse break down voltage at IR = 1 mA VBR at IPP = 1 A VC at IPP = IPPM = 30 A at IPP = 1 A Protection paths Reverse stand off voltage Reverse clamping voltage Forward clamping voltage Capacitance Min. Typ. Max. Unit 2 lines 4 V 20 µA 7.5 9 V VC 11.2 14.3 V VF 1 1.2 V at IPP = IPPM = 30 A VF 4.5 at VR = 0 V; f = 1 MHz CD 310 at VR = 2 V; f = 1 MHz CD 200 5 6.1 V V 450 pF pF GSOT05C-HT3 BiAs mode (between pin 1 to 3 or pin 2 to 3) Parameter Protection paths Reverse stand off voltage Test conditions/remarks Symbol Number of lines which can be protected Nlines at IR = 10 µA VRWM Min. Typ. Max. Unit 2 lines 5 V Reverse current at VR = 5 V IR Reverse break down voltage at IR = 1 mA VBR at IPP = 1 A VC 7 8.7 at IPP = IPPM = 30 A VC 12 16 V at IPP = 1 A VF 1 1.2 V at IPP = IPPM = 30 A VF 4.5 at VR = 0 V; f = 1 MHz CD 260 350 pF at VR = 2.5 V; f = 1 MHz CD 150 Reverse clamping voltage Forward clamping voltage Capacitance www.vishay.com 6 10 6 For technical support, please contact: ESD-Protection@vishay.com 6.8 µA V V V pF Document Number 85825 Rev. 1.7, 21-Apr-08 GSOT03C-HT3 to GSOT36C-HT3 Vishay Semiconductors GSOT08C-HT3 BiAs mode (between pin 1 to 3 or pin 2 to 3) Parameter Test conditions/remarks Symbol Number of lines which can be protected Nlines Reverse stand off voltage at IR = 5 µA VRWM Reverse current at VR = 8 V IR Reverse break down voltage at IR = 1 mA VBR Protection paths Reverse clamping voltage Forward clamping voltage Capacitance Min. Typ. Max. Unit 2 lines 5 µA 8 9 V 10 V at IPP = 1 A VC 10.7 13 V at IPP = IPPM = 18 A VC 15.2 19.2 V at IPP = 1 A VF 1 1.2 V 250 pF at IPP = IPPM = 18 A VF 3 at VR = 0 V; f = 1 MHz CD 160 at VR = 4 V; f = 1 MHz CD 80 V pF GSOT12C-HT3 BiAs mode (between pin 1 to 3 or pin 2 to 3) Parameter Protection paths Test conditions/remarks Symbol Number of lines which can be protected Nlines Min. Typ. Max. Unit 2 lines 1 µA Reverse stand off voltage at IR = 1 µA VRWM Reverse current at VR = 12 V IR Reverse break down voltage at IR = 1 mA VBR at IPP = 1 A VC 15.4 18.7 V at IPP = IPPM = 12 A VC 21.2 26 V at IPP = 1 A VF 1 1.2 V at IPP = IPPM = 12 A VF 2.2 at VR = 0 V; f = 1 MHz CD 115 150 pF at VR = 6 V; f = 1 MHz CD 50 Reverse clamping voltage Forward clamping voltage Capacitance 12 13.5 V 15 V V pF GSOT15C-HT3 BiAs mode (between pin 1 to 3 or pin 2 to 3) Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit 2 lines 1 µA Number of lines which can be protected Nlines Reverse stand off voltage at IR = 1 µA VRWM Reverse current at VR = 15 V IR Reverse break down voltage at IR = 1 mA VBR at IPP = 1 A VC 19.4 23.5 V at IPP = IPPM = 8 A VC 24.8 28.8 V 1.2 V Protection paths Reverse clamping voltage Forward clamping voltage Capacitance Document Number 85825 Rev. 1.7, 21-Apr-08 15 16.5 V 18 at IPP = 1 A VF 1 at IPP = IPPM = 8 A VF 1.8 at VR = 0 V; f = 1 MHz CD 90 at VR = 7.5 V; f = 1 MHz CD 35 For technical support, please contact: ESD-Protection@vishay.com V V 120 pF pF www.vishay.com 7 GSOT03C-HT3 to GSOT36C-HT3 Vishay Semiconductors GSOT24C-HT3 BiAs mode (between pin 1 to 3 or pin 2 to 3) Parameter Test conditions/remarks Symbol Number of lines which can be protected Nlines Reverse stand off voltage at IR = 1 µA VRWM Reverse current at VR = 24 V IR Reverse break down voltage at IR = 1 mA VBR Protection paths Reverse clamping voltage Forward clamping voltage Capacitance Min. Typ. Max. Unit 2 lines 1 µA 24 27 V 30 V at IPP = 1 A VC 34 41 at IPP = IPPM = 5 A VC 41 47 V at IPP = 1 A VF 1 1.2 V 80 pF at IPP = IPPM = 5 A VF 1.4 at VR = 0 V; f = 1 MHz CD 65 at VR = 12 V; f = 1 MHz CD 20 V V pF GSOT36C-HT3 BiAs mode (between pin 1 to 3 or pin 2 to 3) Parameter Protection paths Test conditions/remarks Symbol Number of lines which can be protected Nlines Min. Typ. Max. Unit 2 lines 1 µA Reverse stand off voltage at IR = 1 µA VRWM Reverse current at VR = 36 V IR Reverse break down voltage at IR = 1 mA VBR at IPP = 1 A VC 49 60 V at IPP = IPPM = 3.5 A VC 59 71 V at IPP = 1 A VF 1 1.2 V at IPP = IPPM = 3.5 A VF 1.3 at VR = 0 V; f = 1 MHz CD 52 65 pF at VR = 18 V; f = 1 MHz CD 12 Reverse clamping voltage Forward clamping voltage Capacitance www.vishay.com 8 36 39 For technical support, please contact: ESD-Protection@vishay.com V 43 V V pF Document Number 85825 Rev. 1.7, 21-Apr-08 GSOT03C-HT3 to GSOT36C-HT3 Vishay Semiconductors BiSy-mode (1-line Bidirectional Symmetrical protection mode) If a bipolar symmetrical protection device is needed the GSOTxxC-HT3 can also be used as a single line protection device. Therefore pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). pin 3 must not be connected. Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOTxxC-HS3 passes one diode in forward direction and the other one in reverse direction. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances (resistances and inductances) of the protection device. Due to the same clamping levels in positive and negative direction the GSOTxxC-HT3 voltage clamping behaviour is Bidirectional and Symmetrical (BiSy). L1 1 3 2 20241 Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified GSOT03C-HT3 BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) Parameter Test conditions/remarks Symbol Number of lines which can be protected Nlines Reverse stand off voltage at IR = 100 µA VRWM Reverse current at VR = 3.8 V IR Reverse break down voltage at IR = 1 mA VBR Protection paths Clamping voltage Capacitance Min. Typ. Max. Unit 1 lines 100 µA 3.8 4.5 V 5.3 V at IPP = 1 A VC 7 8.4 V at IPP = IPPM = 30 A VC 14 16.8 V at VR = 0 V; f = 1 MHz CD 210 300 pF at VR = 1.6 V; f = 1 MHz CD 190 pF GSOT04C-HT3 BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit 1 lines 20 µA Number of lines which can be protected Nlines Reverse stand off voltage at IR = 20 µA VRWM Reverse current at VR = 4.5 V IR Reverse break down voltage at IR = 1 mA VBR at IPP = 1 A VC 7.5 9 V at IPP = IPPM = 30 A VC 15.7 18.8 V at VR = 0 V; f = 1 MHz CD 155 225 pF at VR = 2 V; f = 1 MHz CD 135 Protection paths Clamping voltage Capacitance Document Number 85825 Rev. 1.7, 21-Apr-08 4.5 5.5 For technical support, please contact: ESD-Protection@vishay.com V 6.8 V pF www.vishay.com 9 GSOT03C-HT3 to GSOT36C-HT3 Vishay Semiconductors GSOT05C-HT3 BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) Parameter Test conditions/remarks Symbol Number of lines which can be protected Nlines Reverse stand off voltage at IR = 10 µA VRWM Reverse current at VR = 5.5 V IR Reverse break down voltage at IR = 1 mA VBR Protection paths Clamping voltage Capacitance Min. Typ. Max. Unit 1 lines 10 µA 5.5 6.5 V 7.5 V at IPP = 1 A VC 8.1 9.7 at IPP = IPPM = 30 A VC 17 20.4 V at VR = 0 V; f = 1 MHz CD 130 175 pF at VR = 2.5 V; f = 1 MHz CD 100 V pF GSOT08C-HT3 BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) Parameter Test conditions/remarks Symbol Number of lines which can be protected Nlines at IR = 5 µA VRWM Reverse current at VR = 8.5 V IR Reverse break down voltage at IR = 1 mA VBR at IPP = 1 A VC at IPP = IPPM = 18 A Protection paths Reverse stand off voltage Clamping voltage Capacitance Min. Typ. Max. Unit 1 lines 5 µA 11.7 14 V VC 18.5 22.2 V at VR = 0 V; f = 1 MHz CD 80 125 pF at VR = 4 V; f = 1 MHz CD 60 8.5 9.5 V 10.7 V pF GSOT12C-HT3 BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) Parameter Protection paths Reverse stand off voltage Reverse current Reverse break down voltage Clamping voltage Capacitance Test conditions/remarks Symbol Number of lines which can be protected Nlines at IR = 1 µA VRWM Min. Typ. Max. Unit 1 lines 12.5 V at VR = 12.5 V IR at IR = 1 mA VBR at IPP = 1 A VC 16.4 19.7 at IPP = IPPM = 12 A VC 23.4 28.1 V at VR = 0 V; f = 1 MHz CD 58 75 pF at VR = 6 V; f = 1 MHz CD 36 1 13.5 15.7 µA V V pF GSOT15C-HT3 BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) Parameter Protection paths Reverse stand off voltage Reverse current Reverse break down voltage Clamping voltage Capacitance www.vishay.com 10 Test conditions/remarks Symbol Number of lines which can be protected Nlines at IR = 1 µA VRWM at VR = 15.5 V IR at IR = 1 mA VBR at IPP = 1 A VC at IPP = IPPM = 8 A Min. Typ. Max. Unit 1 lines 1 µA 20.4 24.5 V VC 26.6 30.6 V at VR = 0 V; f = 1 MHz CD 45 60 pF at VR = 7.5 V; f = 1 MHz CD 25 15.5 17 For technical support, please contact: ESD-Protection@vishay.com V 18.7 V pF Document Number 85825 Rev. 1.7, 21-Apr-08 GSOT03C-HT3 to GSOT36C-HT3 Vishay Semiconductors GSOT24C-HT3 BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) Parameter Protection paths Reverse stand off voltage Reverse current Reverse break down voltage Clamping voltage Capacitance Test conditions/remarks Symbol Number of lines which can be protected Nlines at IR = 1 µA VRWM at VR = 24.5 V IR at IR = 1 mA VBR Min. Typ. Max. Unit 1 lines 1 µA 24.5 27.5 V 30.7 V at IPP = 1 A VC 34 41 at IPP = IPPM = 5 A VC 40 48 V at VR = 0 V; f = 1 MHz CD 33 40 pF at VR = 12 V; f = 1 MHz CD 18 V pF GSOT36C-HT3 BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) Parameter Protection paths Reverse stand off voltage Reverse current Reverse break down voltage Clamping voltage Capacitance Test conditions/remarks Symbol Number of lines which can be protected Nlines Min. Typ. Max. Unit at IR = 1 µA VRWM 1 lines at VR = 36.5 V IR 1 µA at IR = 1 mA VBR at IPP = 1 A VC 50 60 at IPP = IPPM = 3.5 A VC 60 72 V at VR = 0 V; f = 1 MHz CD 26 33 pF at VR = 18 V; f = 1 MHz CD 10 36.5 39.5 V 43.7 V V pF Package Dimensions in millimeters (inches): LLP75-3B 18057 Document Number 85825 Rev. 1.7, 21-Apr-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 11 GSOT03C-HT3 to GSOT36C-HT3 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 12 For technical support, please contact: ESD-Protection@vishay.com Document Number 85825 Rev. 1.7, 21-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1