GSOT08C-HE3-08

GSOT03C to GSOT36C www.vishay.com Vishay Semiconductors Two-Line ESD Protection in SOT-23 FEATURES • Two-line ESD protection device 1 2 • ESD immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • ESD capability according to AEC-Q101: human body model: class H3B: > 8 kV 3 20456 20512 1 • Space saving SOT-23 package Available MARKING (example only) • e3 - Sn XX XX • AEC-Q101 qualified available YYY 20357        YYY = type code (see table below) XX = date code DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Models ORDERING INFORMATION ENVIRONMENTAL AND QUALITY CODE PART RoHS-COMPLIANT + NUMBER TIN AEC-Q101 LEAD (Pb)-FREE (EXAMPLE) QUALIFIED PLATED STANDARD GREEN GSOT05CGSOT05CGSOT05CGSOT05CGSOT05CGSOT05CGSOT05CGSOT05C- E G H H E G E G H H E G 3 3 3 3 3 3 3 3 PACKAGING CODE 3K PER 7" REEL (8 mm TAPE), 15K/BOX = MOQ 10K PER 13" REEL (8 mm TAPE), 10K/BOX = MOQ -08 -08 -08 -08 -18 -18 -18 -18 ORDERING CODE (EXAMPLE) GSOT05C-E3-08 GSOT05C-G3-08 GSOT05C-HE3-08 GSOT05C-HG3-08 GSOT05C-E3-18 GSOT05C-G3-18 GSOT05C-HE3-18 GSOT05C-HG3-18 PACKAGE DATA DEVICE NAME PACKAGE NAME GSOT03C SOT-23 GSOT04C SOT-23 GSOT05C SOT-23 GSOT08C SOT-23 GSOT12C SOT-23 GSOT15C SOT-23 GSOT24C SOT-23 GSOT36C SOT-23 Rev. 2.9, 17-Apr-2019 TYPE CODE ENVIRONMENTAL STATUS WEIGHT 03C C1G 04C C8G 05C C2G 08C C3G 12C C4G 15C C5G 24C C6G 36C C7G Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green Standard Green 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg 8.8 mg 8.1 mg MOLDING COMPOUND FLAMMABILITY RATING UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) Peak temperature max. 260 °C Peak temperature max. 260 °C Peak temperature max. 260 °C Peak temperature max. 260 °C Peak temperature max. 260 °C Peak temperature max. 260 °C Peak temperature max. 260 °C Peak temperature max. 260 °C Document Number: 85824 1 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03C to GSOT36C www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS GSOT03C PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature SYMBOL VALUE UNIT 30 A 30 A 369 W 504 W ± 30 kV ± 30 kV IPPM PPP VESD TJ -55 to +150 °C TSTG -55 to +150 °C SYMBOL VALUE UNIT 30 A 30 A 429 W 564 W ± 30 kV ± 30 kV ABSOLUTE MAXIMUM RATINGS GSOT04C PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature IPPM PPP VESD TJ -55 to +150 °C TSTG -55 to +150 °C SYMBOL VALUE UNIT 30 A 30 A 480 W 612 W ± 30 kV ± 30 kV TJ -55 to +150 °C TSTG -55 to +150 °C ABSOLUTE MAXIMUM RATINGS GSOT05C PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Rev. 2.9, 17-Apr-2019 TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature IPPM PPP VESD Document Number: 85824 2 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03C to GSOT36C www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS GSOT08C PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature SYMBOL VALUE UNIT 18 A 18 A 345 W 400 W ± 30 kV IPPM PPP VESD ± 30 kV TJ -55 to +150 °C TSTG -55 to +150 °C SYMBOL VALUE UNIT 12 A 12 A 312 W 337 W ± 30 kV ABSOLUTE MAXIMUM RATINGS GSOT12C PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature IPPM PPP VESD ± 30 kV TJ -55 to +150 °C TSTG -55 to +150 °C SYMBOL VALUE UNIT 8 A 8 A 345 W 400 W ± 30 kV ABSOLUTE MAXIMUM RATINGS GSOT15C PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Rev. 2.9, 17-Apr-2019 TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature IPPM PPP VESD ± 30 kV TJ -55 to +150 °C TSTG -55 to +150 °C Document Number: 85824 3 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03C to GSOT36C www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS GSOT24C PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature SYMBOL VALUE UNIT 5 A 5 A 235 W 240 W ± 30 kV ± 30 kV IPPM PPP VESD TJ -55 to +150 °C TSTG -55 to +150 °C SYMBOL VALUE UNIT 3.5 A 3.5 A 248 W 252 W ± 30 kV ± 30 kV TJ -55 to +150 °C TSTG -55 to +150 °C ABSOLUTE MAXIMUM RATINGS GSOT36C PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Rev. 2.9, 17-Apr-2019 TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature IPPM PPP VESD Document Number: 85824 4 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03C to GSOT36C www.vishay.com Vishay Semiconductors BiAs-MODE (2-line Bidirectional Asymmetrical protection mode) With the GSOTxxC two signal- or data-lines (L1, L2) can be protected against voltage transients. With pin 3 connected to ground and pin 1 and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (VRWM) the protection diode between pin 2 and pin 3 and between pin 1 and pin 3 offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the breakdown voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The Clamping Voltage (VC) is defined by the breakdown voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection diode. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction through the protection diode. The low Forward Voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the GSOTxxC clamping behavior is Bidirectional and Asymmetrical (BiAs). L1 L2 2 1 BiAs 3 Ground 20358 If a higher surge current or peak pulse current (IPP) is needed, both protection diodes in the GSOTxxC can also be used in parallel in order to “double” the performance. This offers: • • • • • double surge power = double peak pulse current (2 x IPPM) half of the line inductance = reduced clamping voltage half of the line resistance = reduced clamping voltage double line capacitance (2 x CD) double reverse leakage current (2 x IR) L1 2 1 3 Ground 20359 ELECTRICAL CHARACTERISTICS GSOT03C (Tamb = 25 °C unless otherwise specified)  between pin 1 to pin 3 or pin 2 to pin 3 PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Max. reverse working voltage VRWM - - 3.3 V Reverse voltage at IR = 100 μA VR 3.3 - - V Reverse current at VR = 3.3 V IR - - 100 μA Reverse breakdown voltage at IR = 1 mA VBR 4.0 4.6 5.5 V - 5.7 7.5 V - 10 12.3 V - 1 1.2 V Protection paths Reverse stand-off voltage Reverse clamping voltage Forward clamping voltage Capacitance Rev. 2.9, 17-Apr-2019 at IPP = 1 A at IPP = IPPM = 30 A at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 1.6 V; f = 1 MHz VC VF CD - 4.5 - V - 420 600 pF - 260 - pF Document Number: 85824 5 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03C to GSOT36C www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS GSOT04C (Tamb = 25 °C unless otherwise specified)  between pin 1 to pin 3 or pin 2 to pin 3 PARAMETER Protection paths Reverse stand-off voltage Reverse voltage TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Max. reverse working voltage VRWM - - 4 V at IR = 20 μA VR 4 - - V Reverse current at VR = 4 V IR - - 20 μA Reverse breakdown voltage at IR = 1 mA VBR 5 6.1 7 V - 7.5 9 V - 11.2 14.3 V - 1 1.2 V Reverse clamping voltage Forward clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 30 A at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 2 V; f = 1 MHz VC VF CD - 4.5 - V - 310 450 pF - 200 - pF ELECTRICAL CHARACTERISTICS GSOT05C (Tamb = 25 °C unless otherwise specified)  between pin 1 to pin 3 or pin 2 to pin 3 PARAMETER Protection paths Reverse stand-off voltage Reverse voltage TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Max. reverse working voltage VRWM - - 5 V at IR = 10 μA VR 5 - - V Reverse current at VR = 5 V IR - - 10 μA Reverse breakdown voltage at IR = 1 mA VBR 6 6.8 8 V - 7 8.7 V - 12 16 V V Reverse clamping voltage Forward clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 30 A at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 2.5 V; f = 1 MHz VC VF CD - 1 1.2 - 4.5 - V - 260 350 pF - 150 - pF ELECTRICAL CHARACTERISTICS GSOT08C (Tamb = 25 °C unless otherwise specified)  between pin 1 to pin 3 or pin 2 to pin 3 PARAMETER Protection paths Reverse stand-off voltage Reverse voltage TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Max. reverse working voltage VRWM - - 8 V at IR = 5 μA VR 8 - - V μA Reverse current at VR = 8 V IR - - 5 Reverse breakdown voltage at IR = 1 mA VBR 9 10 11 V - 10.7 13 V - 15.2 19.2 V - 1 1.2 V Reverse clamping voltage Forward clamping voltage Capacitance Rev. 2.9, 17-Apr-2019 at IPP = 1 A at IPP = IPPM = 18 A at IPP = 1 A at IPP = IPPM = 18 A at VR = 0 V; f = 1 MHz at VR = 4 V; f = 1 MHz VC VF CD - 3 - V - 160 250 pF - 80 - pF Document Number: 85824 6 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03C to GSOT36C www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS GSOT12C (Tamb = 25 °C unless otherwise specified)  between pin 1 to pin 3 or pin 2 to pin 3 PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Max. reverse working voltage VRWM - - 12 V Reverse voltage at IR = 1 μA VR 12 - - V Reverse current at VR = 12 V IR - - 1 μA Reverse breakdown voltage at IR = 1 mA VBR 13.5 15 16.5 V V Protection paths Reverse stand-off voltage Reverse clamping voltage Forward clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 12 A at IPP = 1 A at IPP = IPPM = 12 A at VR = 0 V; f = 1 MHz at VR = 6 V; f = 1 MHz VC VF CD - 15.4 18.7 - 21.2 26 V - 1 1.2 V - 2.2 - V - 115 150 pF - 50 - pF ELECTRICAL CHARACTERISTICS GSOT15C (Tamb = 25 °C unless otherwise specified)  between pin 1 to pin 3 or pin 2 to pin 3 PARAMETER Protection paths Reverse stand-off voltage TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Max. reverse working voltage VRWM - - 15 V Reverse voltage at IR = 1 μA VR 15 - - V Reverse current at VR = 15 V IR - - 1 μA Reverse breakdown voltage at IR = 1 mA VBR 16.5 18 20 V - 19.4 23.5 V - 24.8 28.8 V - 1 1.2 V - 1.8 - V - 90 120 pF - 35 - pF Reverse clamping voltage Forward clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 8 A at IPP = 1 A at IPP = IPPM = 8 A at VR = 0 V; f = 1 MHz at VR = 7.5 V; f = 1 MHz VC VF CD ELECTRICAL CHARACTERISTICS GSOT24C (Tamb = 25 °C unless otherwise specified)  between pin 1 to pin 3 or pin 2 to pin 3 PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Max. reverse working voltage VRWM - - 24 V Reverse voltage at IR = 1 μA VR 24 - - V Reverse current at VR = 24 V IR - - 1 μA Reverse breakdown voltage at IR = 1 mA VBR 27 30 33 V Protection paths Reverse stand-off voltage Reverse clamping voltage Forward clamping voltage Capacitance Rev. 2.9, 17-Apr-2019 at IPP = 1 A at IPP = IPPM = 5 A at IPP = 1 A at IPP = IPPM = 5 A at VR = 0 V; f = 1 MHz at VR = 12 V; f = 1 MHz VC VF CD - 34 41 V - 41 47 V V - 1 1.2 - 1.4 - V - 65 80 pF - 20 - pF Document Number: 85824 7 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03C to GSOT36C www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS GSOT36C (Tamb = 25 °C unless otherwise specified)  between pin 1 to pin 3 or pin 2 to pin 3 PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Max. reverse working voltage VRWM - - 36 V Reverse voltage at IR = 1 μA VR 36 - - V Reverse current at VR = 36 V IR - - 1 μA Reverse breakdown voltage at IR = 1 mA VBR 39 43 47 V - 49 60 V - 59 71 V - 1 1.2 V Protection paths Reverse stand-off voltage Reverse clamping voltage Forward clamping voltage at IPP = 1 A at IPP = IPPM = 3.5 A at IPP = 1 A at IPP = IPPM = 3.5 A at VR = 0 V; f = 1 MHz Capacitance at VR = 18 V; f = 1 MHz VC VF CD - 1.3 - V - 52 65 pF - 12 - pF BiSy-MODE (1-line bidirectional symmetrical protection mode) If a bipolar symmetrical protection device is needed the GSOTxxC can also be used as a single line protection device. Therefore pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin 3 must not be connected. Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOTxxC passes one diode in forward direction and the other one in reverse direction. The clamping voltage (VC) is defined by the breakthrough voltage (VBR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances (resistances and inductances) of the protection device. Due to the same clamping levels in positive and negative direction the GSOTxxC voltage clamping behaviour is bidirectional and symmetrical (BiSy). 3 1 L1 2 BiSy Ground 20361 ELECTRICAL CHARACTERISTICS GSOT03C (Tamb = 25 °C unless otherwise specified)  between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. Number of lines which can be protected Nchannel - Max. reverse working voltage VRWM - Reverse voltage at IR = 100 μA VR 3.8 Reverse current at VR = 3.8 V IR Reverse breakdown voltage at IR = 1 mA VBR - Protection paths Reverse stand-off voltage Reverse clamping voltage Capacitance Rev. 2.9, 17-Apr-2019 at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 1.6 V; f = 1 MHz VC CD MAX. UNIT - 1 lines - 3.8 V - - V - - 100 μA 4.5 5.3 6.2 V 7 8.4 V - 14 16.8 V - 210 300 pF - 190 - pF Document Number: 85824 8 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03C to GSOT36C www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS GSOT04C (Tamb = 25 °C unless otherwise specified)  between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 4.5 V Reverse voltage at IR = 20 μA VR 4.5 - - V Reverse current at VR = 4.5 V IR - - 20 μA Reverse breakdown voltage at IR = 1 mA VBR 5.5 6.8 7.7 V V Protection paths Reverse stand-off voltage Reverse clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 2 V; f = 1 MHz VC CD - 7.5 9 - 15.7 18.8 V - 155 225 pF - 135 - pF ELECTRICAL CHARACTERISTICS GSOT05C (Tamb = 25 °C unless otherwise specified)  between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected PARAMETER Protection paths Reverse stand-off voltage TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 5.5 V Reverse voltage at IR = 10 μA VR 5.5 - - V Reverse current at VR = 5.5 V IR - - 10 μA Reverse breakdown voltage at IR = 1 mA VBR 6.5 7.5 8.7 V - 8.1 9.7 V - 17 20.4 V - 130 175 pF - 100 - pF Reverse clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 4 V; f = 1 MHz VC CD ELECTRICAL CHARACTERISTICS GSOT08C (Tamb = 25 °C unless otherwise specified)  between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected Nchannel - - 1 lines Reverse stand-off voltage Max. reverse working voltage VRWM - - 8.5 V Reverse voltage at IR = 5 μA VR 8.5 - - V Reverse current at VR = 8.5 V IR - - 5 μA Reverse breakdown voltage at IR = 1 mA VBR 9.5 10.7 11.7 V V Reverse clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 18 A at VR = 0 V; f = 1 MHz at VR = 4 V; f = 1 MHz VC CD - 11.7 14 - 18.5 22.2 V - 80 125 pF - 60 - pF MAX. UNIT lines ELECTRICAL CHARACTERISTICS GSOT12C (Tamb = 25 °C unless otherwise specified)  between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. Number of lines which can be protected Nchannel - - 1 Max. reverse working voltage VRWM - - 12.5 V Reverse voltage at IR = 1 μA VR 12.5 - - V Reverse current at VR = 12.5 V IR - - 1 μA at IR = 1 mA VBR 13.5 15.7 16.5 V - 16.4 19.7 V - 23.4 28.1 V - 58 75 pF - 36 - pF Protection paths Reverse stand-off voltage Reverse breakdown voltage Reverse clamping voltage Capacitance Rev. 2.9, 17-Apr-2019 at IPP = 1 A at IPP = IPPM = 12 A at VR = 0 V; f = 1 MHz at VR = 7.5 V; f = 1 MHz VC CD TYP. Document Number: 85824 9 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03C to GSOT36C www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS GSOT15C (Tamb = 25 °C unless otherwise specified)  between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. Number of lines which can be protected Nchannel - Max. reverse working voltage VRWM - Reverse voltage at IR = 1 μA VR 15.5 - Reverse current at VR = 15.5 V IR - at IR = 1 mA VBR 17 Protection paths Reverse stand-off voltage Reverse breakdown voltage Reverse clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 8 A at VR = 0 V; f = 1 MHz at VR = 7.5 V; f = 1 MHz VC CD TYP. MAX. UNIT - 1 lines - 15.5 V - V - 1 μA 18.7 20.7 V V - 20.4 24.5 - 26.6 30.6 V - 45 60 pF - 25 - pF ELECTRICAL CHARACTERISTICS GSOT24C (Tamb = 25 °C unless otherwise specified)  between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 24.5 V Reverse voltage at IR = 1 μA VR 24.5 - - V Reverse current at VR = 24.5 V IR - - 1 μA at IR = 1 mA VBR 27.5 30.7 33.7 V - 34 41 V - 40 48 V - 33 40 pF - 18 - pF Protection paths Reverse stand-off voltage Reverse breakdown voltage Reverse clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 5 A at VR = 0 V; f = 1 MHz at VR = 12 V; f = 1 MHz VC CD ELECTRICAL CHARACTERISTICS GSOT36C (Tamb = 25 °C unless otherwise specified)  between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected PARAMETER Protection paths Reverse stand-off voltage TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 36.5 V Reverse voltage at IR = 1 μA VR 36.5 - - V Reverse current at VR = 36.5 V IR - - 1 μA at IR = 1 mA VBR 39.5 43.7 47.7 V - 50 60 V Reverse breakdown voltage Reverse clamping voltage Capacitance Rev. 2.9, 17-Apr-2019 at IPP = 1 A at IPP = IPPM = 3.5 A at VR = 0 V; f = 1 MHz at VR = 18 V; f = 1 MHz VC CD - 60 72 V - 26 33 pF - 10 - pF Document Number: 85824 10 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03C to GSOT36C www.vishay.com Vishay Semiconductors Axis Title Axis Title 100 10000 10000 120 Pin 3 to 1 or pin 3 to 2 Rise time = 0.7 ns to 1 ns 100 10 100 1st line 2nd line 2nd line IESD (%) 0.1 1000 80 1st line 2nd line 2nd line IF (mA) 1000 1 60 53 100 40 27 0.01 20 10 0.001 0.5 0.6 0.7 0.8 10 0 0.9 -10 0 10 20 30 40 50 60 70 80 90 100 VF (V) t (ns) Fig. 1 - Typical Forward Current IF vs. Forward Voltage VF Fig. 4 - ESD Discharge Current Waveform According to IEC 61000-4-2 (330  / 150 pF) Axis Title Axis Title 50 40 TJ = 25 °C 80 15 10 GSOT15C 60 1st line 2nd line 1000 1st line 2nd line 2nd line VR (V) 1000 GSOT24C 25 20 8 µs to 100 % 100 35 30 10000 Pin 1 to 3 or pin 2 to 3 GSOT36C 2nd line IPPM (%) 45 10000 20 µs to 50 % 40 100 100 GSOT12C 20 GSOT08C 5 0 0.01 10 100 1 10 0 10 000 0 10 20 30 40 IR (µA) t (µs) Fig. 2 - Typical Reverse Voltage VR vs. Reverse Current IR Fig. 5 - 8/20 μs Peak Pulse Current Waveform According to IEC 61000-4-5 Axis Title 8 10000 Pin 1 to 3 or pin 2 to 3 7 GSOT05C 6 GSOT04C Transmission line pulse (TLP): 30 GSOT03C 4 3 100 2nd line VC-TLP (V) 1st line 2nd line TJ = 25 °C 20 GSOT08 15 GSOT05 GSOT04 GSOT03 10 1 5 10 1 100 10 000 GSOT12 25 2 0 0.01 GSOT15 35 1000 5 2nd line VR (V) 40 0 0 20 40 60 80 100 IR (µA) ITLP (A) Fig. 3 - Typical Reverse Voltage VR vs. Reverse Current IR Fig. 6 - Typical Clamping Voltage vs. Peak Pulse Current Rev. 2.9, 17-Apr-2019 Document Number: 85824 11 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03C to GSOT36C www.vishay.com Vishay Semiconductors Axis Title Transmission line pulse (TLP): GSOT36 GSOT24 100 2nd line VC (V) 2nd line VC-TLP (V) 80 60 40 20 0 0 20 40 60 80 65 60 55 50 45 40 35 30 25 20 15 10 5 0 10000 GSOT36C GSOT24C 1000 1st line 2nd line 120 100 Measured according IEC 61000-4-5 (8/20 µs - wave form) 10 0 100 2 4 6 8 10 ITLP (A) IPP (A) Fig. 7 - Typical Clamping Voltage vs. Peak Pulse Current Fig. 9 - Typical Peak Clamping Voltage vs. Peak Pulse Current Axis Title Axis Title 10000 30 1000 GSOT15C 10000 f = 1 MHz 25 GSOT12C GSOT05C GSOT04C 10 GSOT03C 5 100 GSOT08C 100 GSOT12C GSOT15C 0 10 20 40 100 GSOT24C Measured according IEC 61000-4-5 (8/20 µs - wave form) 0 1000 GSOT04C GSOT05C 1st line 2nd line 15 2nd line CD (pF) GSOT08C 1st line 2nd line 2nd line VC (V) GSOT03C 1000 20 60 10 0.01 GSOT36C 0.1 1 10 10 100 IPP (A) VR (V) Fig. 8 - Typical Peak Clamping Voltage vs. Peak Pulse Current Fig. 10 - Typical Capacitance vs. Reverse Voltage Rev. 2.9, 17-Apr-2019 Document Number: 85824 12 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GSOT03C to GSOT36C www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) 0° t o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.5 (0.020) 0.45 (0.018) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.43 (0.056) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 1 (0.039) 0.9 (0.035) 0.95 (0.037) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23. Sep. 2009 17418 0.95 (0.037) Unreeling direction SOT-23 Orientation in carrier tape SOT-23 S8-V-3929.01-006 (4) 04.02.2010 22607 Rev. 2.9, 17-Apr-2019 Top view Document Number: 85824 13 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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