HFA16TB120STRL

HFA16TB120S Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • BENEFITS 2 1 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level • • • • • 3 Anode DESCRIPTION D2PAK HFA16TB120S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 16 A continuous current, the HFA16TB120S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA16TB120S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY VR Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count 1200 V VF at 16 A at 25 °C 3V IF(AV) 16 A trr (typical) 30 ns TJ (maximum) 150 °C Qrr (typical) 260 nC dI(rec)M/dt (typical) at 125 °C 76 A/µs IRRM (typical) 5.8 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage TEST CONDITIONS VR Maximum continuous forward current IF TC = 100 °C MAX. UNITS 1200 V 16 Single pulse forward current IFSM 190 Maximum repetitive forward current IFRM 64 Maximum power dissipation PD Operating junction and storage temperature range Document Number: 93075 Revision: 22-Oct-08 TC = 25 °C 151 TC = 100 °C 60 TJ, TStg For technical questions, contact: diodes-tech@vishay.com - 55 to + 150 A W °C www.vishay.com 1 HFA16TB120S Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 16 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode breakdown voltage VBR IR = 100 µA Maximum forward voltage VFM IF = 32 A IF = 16 A See fig. 1 MIN. TYP. MAX. 1200 - - - 2.5 3.0 - 3.2 3.93 IF = 16 A, TJ = 125 °C - 2.3 2.7 VR = VR rated - 0.75 20 - 375 2000 UNITS V Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V See fig. 3 - 27 40 pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH UNITS TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 µA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5 and 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 30 - trr IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V trr1 TJ = 25 °C - 90 135 trr2 TJ = 125 °C - 164 245 - 5.8 10 - 8.3 15 - 260 675 - 680 1838 IRRM1 TJ = 25 °C IRRM2 TJ = 125 °C IF = 16 A dIF/dt = 200 A/µs VR = 200 V ns A Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C dI(rec)M/dt1 TJ = 25 °C - 120 - dI(rec)M/dt2 TJ = 125 °C - 76 - MIN. TYP. MAX. UNITS - - 300 °C - - 0.83 - - 80 - 2.0 - g - 0.07 - oz. nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s K/W Typical socket mount Weight Marking device www.vishay.com 2 Case style D2PAK For technical questions, contact: diodes-tech@vishay.com HFA16TB120S Document Number: 93075 Revision: 22-Oct-08 HFA16TB120S HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 16 A 1000 100 TJ = 150°C 100 T = 125°C J 10 1 TJ = 25°C 0.1 10 A 0.01 0 200 T = 150°C J 400 600 800 1000 1200 Fig. 2 - Typical Reverse Current vs. Reverse Voltage T = 125°C J T = 25°C J 1000 1 100 T J = 25°C 10 0.1 0 2 4 6 8 1 Forward Voltage Drop - V FM (V) 1 Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 10 100 1000 10000 Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.1 D D D D D D = = = = = = 0.50 0.20 0.10 0.05 0.02 0.01 PDM Single Pulse (Thermal Resistance) t1 t2 Notes: 1. Duty factor D = t1/ t 2 2. Peak TJ = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93075 Revision: 22-Oct-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 HFA16TB120S Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 16 A 270 1600 V R = 200V T J = 125°C T J = 25°C 1400 220 1200 trr (ns) If = 16 A If = 8 A If = 16A If = 8A 1000 170 800 120 600 400 70 VR = 200V TJ = 125°C TJ = 25°C 20 100 200 1000 Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) 30 25 20 0 100 1000 Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 10000 V R = 200V T J = 125°C T J = 25°C V R = 200V T J = 125 °C T J = 25°C 1000 If = 16 A If = 8 A If = 16A If = 8A 15 10 100 5 0 100 1000 Fig. 6 - Typical Recovery Current vs. diF/dt (Per Leg) www.vishay.com 4 10 100 1000 Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) For technical questions, contact: diodes-tech@vishay.com Document Number: 93075 Revision: 22-Oct-08 HFA16TB120S HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 16 A VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95046 Part marking information http://www.vishay.com/doc?95054 Packaging information http://www.vishay.com/doc?95032 Document Number: 93075 Revision: 22-Oct-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1