HFA30PB120

HFA30PB120 Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 30 A FEATURES • • • • • • • Base common cathode BENEFITS • • • • • 2 1 Anode 1 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Guaranteed avalanche Specified at operating conditions Designed and qualified for industrial level Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION 3 Anode 2 HFA30PB120 is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 30 A continuous current, the HFA30PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA30PB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-247AC modified PRODUCT SUMMARY VR 1200 V VF at 30 A at 25 °C 4.1 V IF(AV) 30 A trr (typical) 47 ns TJ (maximum) 150 °C Qrr (typical) 120 nC dI(rec)M/dt (typical) at 125 °C 240 A/µs IRRM (typical) 4.7 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Maximum continuous forward current IF Single pulse forward current IFSM Maximum repetitive forward current IFRM Maximum power dissipation PD Operating junction and storage temperature range Document Number: 93090 Revision: 25-Aug-08 TEST CONDITIONS VR TC = 100 °C VALUES UNITS 1200 V 30 120 A 90 TC = 25 °C 350 TC = 100 °C 140 TJ, TStg For technical questions, contact: diodes-tech@vishay.com - 55 to + 150 W °C www.vishay.com 1 HFA30PB120 Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 30 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 µA IF = 30 A Maximum forward voltage VFM IF = 60 A See fig. 1 IF = 30 A, TJ = 125 °C VR = VR rated MIN. TYP. MAX. 1200 - - - 2.4 4.1 - 3.1 5.7 - 2.3 4.0 UNITS V - 1.3 40 - 1.1 4000 See fig. 3 - 50 75 pF Measured lead to lead 5 mm from package body - 8.0 - nH MAX. UNITS Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 µA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL TEST CONDITIONS MIN. TYP. trr IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 47 - trr1 TJ = 25 °C - 110 170 trr2 TJ = 125 °C - 170 260 IRRM1 TJ = 25 °C - 10 15 IRRM2 TJ = 125 °C - 16 24 Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C dI(rec)M/dt1 dI(rec)M/dt2 IF = 30 A dIF/dt = 200 A/µs VR = 200 V ns A - 650 980 - 1540 2310 TJ = 25 °C - 270 - TJ = 125 °C - 240 - MIN. TYP. MAX. UNITS - - 300 °C - - 0.36 nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 80 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.50 - - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) 0.063" from case (1.6 mm) for 10 s Weight Mounting torque Marking device www.vishay.com 2 Case style TO-247AC modified (JEDEC) For technical questions, contact: diodes-tech@vishay.com °C/W HFA30PB120 Document Number: 93090 Revision: 25-Aug-08 HFA30PB120 HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 30 A Reverse Current - I R (µA) 10 100 T J = 125°C 1 T J = 25°C 0.1 200 400 600 800 1000 1200 Reverse Voltage - V R (V) 10 Fig. 2 - Typical Reverse Current vs. Reverse Voltage 1000 Tj = 125°C Junction Capacitance - CT (pF) IF, Instantaneous Forward Current (A) Tj = 175°C T J = 150°C Tj = 25°C 1 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VF, Forward Voltage Drop (V) 100 TJ = 25°C 10 1 10 100 1000 Reverse Voltage - V R (V) Fig. 1 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 τJ 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) R1 R1 τJ τ1 τ1 R2 R2 τ2 R3 R3 τ3 τ2 τC τ τ3 Ri (°C/W) τi (sec) 0.234 0.000100 0.069 0.000434 0.056 Ci= τi/Ri Ci i/Ri 0.002202 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93090 Revision: 25-Aug-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 HFA30PB120 Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 30 A 3000 300 VR = 390V T J = 25°C _____ 275 IF = 60A T J = 125°C ---------- 250 IF = 30A 2500 VR = 390V I = 60A TJ = 25°C _____ F I TJ = 125°C ---------- F = 30A IF = 15A IF = 15A 225 2000 200 trr (ns) Qrr (nC) 175 150 125 1500 1000 100 75 500 50 25 0 0 100 150 200 250 300 350 400 450 500 100 300 400 500 diF /dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 35 900 V = 390 V R T = 25 °C _____ J 800 T = 125 °C ---------- 30 J IF 25 VR = 390V TJ = 25°C _____ TJ = 125°C ---------- 700 = 60 A di(rec)M / dt (A/µs) IF = 30 A IF = 15 A IR R M (A) 200 diF /dt (A/µs) 20 15 IF 15 A 600 500 400 IF = 30 A 300 10 IF = 60 A 200 5 100 0 0 100 150 200 250 300 350 400 450 500 100 150 200 250 300 350 400 450 500 diF /dt (A/µs) diF /dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 93090 Revision: 25-Aug-08 HFA30PB120 HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 30 A VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions L = 100 µH High-speed switch D.U.T. Rg = 25 Ω Current monitor IL(PK) Freewheel diode + Decay time Vd = 50 V V(AVAL) VR(RATED) Fig. 11 - Avalanche Test Circuit and Waveforms Document Number: 93090 Revision: 25-Aug-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 HFA30PB120 Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 30 A ORDERING INFORMATION TABLE Device code HF A 30 PB 120 - 1 2 3 4 5 6 1 - HEXFRED® family 2 - Process designator: A = Electron irradiated B = Platinum diffused 3 - Current rating (30 = 30 A) 4 - Package outline (PB = TO-247, 2 pins) 5 - Voltage rating (120 = 1200 V) 6 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95253 Part marking information http://www.vishay.com/doc?95255 SPICE model http://www.vishay.com/doc?95358 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 93090 Revision: 25-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1