0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
ICTE15C-E3/73

ICTE15C-E3/73

  • 厂商:

    TFUNK(威世)

  • 封装:

    DO27

  • 描述:

    TVS DIODE 15VWM 21.4VC 1.5KE

  • 详情介绍
  • 数据手册
  • 价格&库存
ICTE15C-E3/73 数据手册
End of Life "August 2021" - Alternative Device: "1.5KE Series" ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor TRANSZORB® Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance Case Style 1.5KE • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS VWM 5.0 V to 18 V VBR (uni-directional) 6.0 V to 21.2 V VBR (bi-directional) 9.2 V to 21.2 V PPPM 1500 W PD 6.5 W IFSM 200 A TJ max. 175 °C Polarity Uni-directional, bi-directional Package 1.5KE DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional types, use C suffix (e.g. ICTE18C). Electrical characteristics apply in both directions. Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. MECHANICAL DATA Case: 1.5KE, molded epoxy body over passivated junction Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant and commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: for uni-directional types the color band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1) Peak pulse current with a 10/1000 μs waveform (1) (fig. 3) Power dissipation on infinite heatsink at TL = 75 °C (fig. 8) Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) Maximum instantaneous forward voltage at 100 A for uni-directional only Operating junction and storage temperature range SYMBOL LIMIT UNIT PPPM 1500 W IPPM See next table A PD 6.5 W IFSM 200 A VF 3.5 V TJ, TSTG -55 to +175 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum Revision: 01-Mar-2021 Document Number: 88356 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life "August 2021" - Alternative Device: "1.5KE Series" ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (JEDEC® REGISTERED DATA) (TA = 25 °C unless otherwise noted) JEDEC® TYPE NUMBER GENERAL SEMICONDUCTOR PART NUMBER STAND-OFF VOLTAGE VWM (V) BREAKDOWN VOLTAGE VBR AT 1.0 mA (V) MIN. MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM CLAMPING VOLTAGE AT IPP = 1.0 A VC (V) MAXIMUM CLAMPING VOLTAGE AT IPP = 10 A VC (V) MAXIMUM PEAK PULSE CURRENT IPP (A) UNI-DIRECTIONAL TYPES 1N6373 (2) ICTE5 (2) 5.0 6.0 300 7.1 7.5 160 1N6374 ICTE8 8.0 9.4 25.0 11.3 11.5 100 1N6375 ICTE10 10.0 11.7 2.0 13.7 14.1 90 1N6376 ICTE12 12.0 14.1 2.0 16.1 16.5 70 1N6377 ICTE15 15.0 17.6 2.0 20.1 20.6 60 1N6378 ICTE18 18.0 21.2 2.0 24.2 25.2 50 BI-DIRECTIONAL TYPES 1N6382 ICTE8C 8.0 9.4 50 11.4 11.6 100 1N6383 ICTE10C 10.0 11.7 2.0 14.1 14.5 90 1N6384 ICTE12C 12.0 14.1 2.0 16.7 17.1 70 1N6385 ICTE15C 15.0 17.6 2.0 20.8 21.4 60 1N6386 ICTE18C 18.0 21.2 2.0 24.8 25.5 50 Notes (1) “C” suffix indicates bi-directional (2) ICTE5 and 1N6373 are not available as bi-directional (3) Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual V (clamping voltage) to the V C BR (breakdown voltage) as measured on a specific device ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ICTE5-E3/54 0.968 ICTE5HE3_A/C (1) 0.968 54 1400 13" diameter paper tape and reel C 1400 13" diameter paper tape and reel Note (1) AEC-Q101 qualified Revision: 01-Mar-2021 Document Number: 88356 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life "August 2021" - Alternative Device: "1.5KE Series" ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 000 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 10 1 Measured at Zero Bias 10 000 Measured at Stand-Off Voltage VWM 1000 0.1 100 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 10 1.0 td - Pulse Width (s) 200 Fig. 4 - Typical Junction Capacitance Uni-Directional 100 100 000 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 100 VBR - Breakdown Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve 75 50 25 Measured at Zero Bias Bi-Directional Type Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 10 000 1000 Measured at Stand-Off Voltage VWM 100 0 0 25 50 75 100 125 150 175 1.0 200 TJ - Initial Temperature (°C) 150 Peak Value IPPM 100 Half Value - IPP IPPM 2 50 100 200 Fig. 5 - Typical Junction Capacitance IFSM - Peak Forward Surge Current (A) TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs 10 VBR - Breakdown Voltage (V) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature IPPM - Peak Pulse Current, % IRSM TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10/1000 µs Waveform as defined by R.E.A. td 0 200 TJ = TJ max. 8.3 ms Single Half Sine-Wave 100 50 10 0 1.0 2.0 3.0 t - Time (ms) Fig. 3 - Pulse Waveform 4.0 1 5 10 50 100 Number of Cycles at 60 Hz Fig. 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Only Revision: 01-Mar-2021 Document Number: 88356 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life "August 2021" - Alternative Device: "1.5KE Series" ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor 8.0 Uni-Directional Only TA = 25 °C PD - Power Dissipation (W) 7.0 ICTE18 ICTE15 ICTE12 ICTE10 ICTE8 10 ICTE5 IPP - Peak Pulse Current (A) 50 6.0 5.0 4.0 3.0 L = 0.375" (9.5 mm) Lead Lengths 2.0 1.0 1 0 6 8 10 12 14 16 18 20 22 24 26 28 0 25 50 75 100 125 150 VC - Clamping Voltage (V) TL - Lead Temperature (°C) Fig. 7 - Typical Characteristics Clamping Voltage Fig. 8 - Power Derating Curve 175 200 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style 1.5KE 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.042 (1.07) 0.038 (0.96) DIA. Revision: 01-Mar-2021 Document Number: 88356 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2021 1 Document Number: 91000
ICTE15C-E3/73
物料型号:文档中列出了多个型号,包括ICTE5至ICTE18C和1N6373至1N6386,这些型号属于Vishay品牌的TRANSZORB®瞬态电压抑制器。

器件简介:TRANSZORB®瞬态电压抑制器是一种用于保护敏感电子设备免受电压瞬态影响的器件,适用于消费电子、计算机、工业和电信领域。

引脚分配:文档中没有提供具体的引脚分配图,但提到了封装类型为1.5KE,通常这种封装为单向或双向器件。

参数特性: - 工作电压范围(VWM):5.0V至18V - 单向击穿电压(VBR):6.0V至21.2V - 双向击穿电压:9.2V至21.2V - 峰值脉冲功率(PPPM):1500W - 最大功耗(Po):6.5W - 峰值正向浪涌电流(IFSM):200A - 最大工作温度(T max.):175°C

功能详解:TRANSZORB®器件具备1500W的峰值脉冲功率能力,响应时间快,具有优秀的钳位能力和低增量浪涌电阻。它们符合RoHS标准,并通过AEC-Q101认证。

应用信息:这些瞬态电压抑制器用于保护IC、MOSFET、传感器信号线等免受由感性负载切换和照明引起的电压瞬态。

封装信息:封装为1.5KE,采用模塑环氧树脂体覆盖钝化结。符合UL 94 V-0可燃性等级。引脚为亚光锡镀层,符合J-STD-002和JESD 22-B102标准。单向类型的颜色带表示阴极端,双向类型没有标记。
ICTE15C-E3/73 价格&库存

很抱歉,暂时无法提供与“ICTE15C-E3/73”相匹配的价格&库存,您可以联系我们找货

免费人工找货