ICTE8CHE3_A/D

End of Life "August 2021" - Alternative Device: "1.5KE Series" ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor TRANSZORB® Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance Case Style 1.5KE • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS VWM 5.0 V to 18 V VBR (uni-directional) 6.0 V to 21.2 V VBR (bi-directional) 9.2 V to 21.2 V PPPM 1500 W PD 6.5 W IFSM 200 A TJ max. 175 °C Polarity Uni-directional, bi-directional Package 1.5KE DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional types, use C suffix (e.g. ICTE18C). Electrical characteristics apply in both directions. Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. MECHANICAL DATA Case: 1.5KE, molded epoxy body over passivated junction Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant and commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: for uni-directional types the color band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1) Peak pulse current with a 10/1000 μs waveform (1) (fig. 3) Power dissipation on infinite heatsink at TL = 75 °C (fig. 8) Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) Maximum instantaneous forward voltage at 100 A for uni-directional only Operating junction and storage temperature range SYMBOL LIMIT UNIT PPPM 1500 W IPPM See next table A PD 6.5 W IFSM 200 A VF 3.5 V TJ, TSTG -55 to +175 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum Revision: 01-Mar-2021 Document Number: 88356 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life "August 2021" - Alternative Device: "1.5KE Series" ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (JEDEC® REGISTERED DATA) (TA = 25 °C unless otherwise noted) JEDEC® TYPE NUMBER GENERAL SEMICONDUCTOR PART NUMBER STAND-OFF VOLTAGE VWM (V) BREAKDOWN VOLTAGE VBR AT 1.0 mA (V) MIN. MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM CLAMPING VOLTAGE AT IPP = 1.0 A VC (V) MAXIMUM CLAMPING VOLTAGE AT IPP = 10 A VC (V) MAXIMUM PEAK PULSE CURRENT IPP (A) UNI-DIRECTIONAL TYPES 1N6373 (2) ICTE5 (2) 5.0 6.0 300 7.1 7.5 160 1N6374 ICTE8 8.0 9.4 25.0 11.3 11.5 100 1N6375 ICTE10 10.0 11.7 2.0 13.7 14.1 90 1N6376 ICTE12 12.0 14.1 2.0 16.1 16.5 70 1N6377 ICTE15 15.0 17.6 2.0 20.1 20.6 60 1N6378 ICTE18 18.0 21.2 2.0 24.2 25.2 50 BI-DIRECTIONAL TYPES 1N6382 ICTE8C 8.0 9.4 50 11.4 11.6 100 1N6383 ICTE10C 10.0 11.7 2.0 14.1 14.5 90 1N6384 ICTE12C 12.0 14.1 2.0 16.7 17.1 70 1N6385 ICTE15C 15.0 17.6 2.0 20.8 21.4 60 1N6386 ICTE18C 18.0 21.2 2.0 24.8 25.5 50 Notes (1) “C” suffix indicates bi-directional (2) ICTE5 and 1N6373 are not available as bi-directional (3) Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual V (clamping voltage) to the V C BR (breakdown voltage) as measured on a specific device ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ICTE5-E3/54 0.968 ICTE5HE3_A/C (1) 0.968 54 1400 13" diameter paper tape and reel C 1400 13" diameter paper tape and reel Note (1) AEC-Q101 qualified Revision: 01-Mar-2021 Document Number: 88356 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life "August 2021" - Alternative Device: "1.5KE Series" ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 000 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 10 1 Measured at Zero Bias 10 000 Measured at Stand-Off Voltage VWM 1000 0.1 100 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 10 1.0 td - Pulse Width (s) 200 Fig. 4 - Typical Junction Capacitance Uni-Directional 100 100 000 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 100 VBR - Breakdown Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve 75 50 25 Measured at Zero Bias Bi-Directional Type Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 10 000 1000 Measured at Stand-Off Voltage VWM 100 0 0 25 50 75 100 125 150 175 1.0 200 TJ - Initial Temperature (°C) 150 Peak Value IPPM 100 Half Value - IPP IPPM 2 50 100 200 Fig. 5 - Typical Junction Capacitance IFSM - Peak Forward Surge Current (A) TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs 10 VBR - Breakdown Voltage (V) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature IPPM - Peak Pulse Current, % IRSM TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10/1000 µs Waveform as defined by R.E.A. td 0 200 TJ = TJ max. 8.3 ms Single Half Sine-Wave 100 50 10 0 1.0 2.0 3.0 t - Time (ms) Fig. 3 - Pulse Waveform 4.0 1 5 10 50 100 Number of Cycles at 60 Hz Fig. 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Only Revision: 01-Mar-2021 Document Number: 88356 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 End of Life "August 2021" - Alternative Device: "1.5KE Series" ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor 8.0 Uni-Directional Only TA = 25 °C PD - Power Dissipation (W) 7.0 ICTE18 ICTE15 ICTE12 ICTE10 ICTE8 10 ICTE5 IPP - Peak Pulse Current (A) 50 6.0 5.0 4.0 3.0 L = 0.375" (9.5 mm) Lead Lengths 2.0 1.0 1 0 6 8 10 12 14 16 18 20 22 24 26 28 0 25 50 75 100 125 150 VC - Clamping Voltage (V) TL - Lead Temperature (°C) Fig. 7 - Typical Characteristics Clamping Voltage Fig. 8 - Power Derating Curve 175 200 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style 1.5KE 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.042 (1.07) 0.038 (0.96) DIA. Revision: 01-Mar-2021 Document Number: 88356 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2021 1 Document Number: 91000