IGBR
www.vishay.com
Vishay Electro-Films
Thin Film, High Power Back-Contact Resistor
FEATURES
• Wire bondable
• Small size
• High power rating
• Single wire bond assembly
• Moisture resistant
• Case size: 0202 to 0808
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
APPLICATIONS
3D 3D
3D Models
Videos
Infographics
Did You
Know?
• Gate resistor for IGBT based power converters
Capabilities and
Custom Options
• Current limiting for LED lighting applications
The high power back-contact resistor (IGBR) series thin film
chip resistor utilizes the excellent thermal properties of
silicon to allow ultra high power rating with miniature case
size for hybrid (chip and wire) assemblies.
• High power applications
• Alternative energy
• Hybrid assemblies
The IGBR requires only one wire bond thus saving hybrid
space.
The IGBRs are manufactured using Vishay Electro-Films
(EFI) sophisticated thin film equipment and manufacturing
technology.
The IGBRs are 100 % electrically tested and visually
inspected to MIL-STD-883, method 2032 class H, class K,
or commercial inspection per internal standards.
TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES, AND TOLERANCES
PARAMETER
VALUE
UNIT
Total Resistance Range
1.8 to 25
Ω
Standard Tolerances
5, 10, 25
%
± 500
ppm/°C
TCR
TCR (ppm/°C) BY CASE SIZE AND VALUE
Case Size (mil)
20 x 20
n/a
40 x 40
n/a
500
60 x 60
500
80 x 80
1.8
3.3
5
300
300
250
300
350
500
500
8
250
300
10
200
250
15
200
20
22
25
Value ()
Document Number: 61107
1
For technical questions, contact: efi@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 29-Mar-2021
IGBR
www.vishay.com
Vishay Electro-Films
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
VALUE
Operating Film Temperature Range
Operating Temperature Range
UNIT
200 max.
°C
-55 to +125
°C
75 max.
V
Working Voltage
Breakdown Voltage
400 max.
V
Thermal Resistivity (1)
Down to 2
K/W
DC Power Rating (1)(2)
Up to 4
W
± 1 ΔR/R
%
± 0.25 ΔR/R
%
Load Life Stability, 1000 h, Film Temperature 200 °C
Short Time Overload, 5 x Rated Power, 25 °C, 5 s
± 1 ΔR/R
%
Moisture Resistance, MIL-STD-202, Method 106 (3)
± 0.25 ΔR/R
%
High Temperature Exposure, 100 h, +150 °C
± 0.5 ΔR/R
%
Low Temperature Operation, -65 °C, 45 min
± 0.5 ΔR/R
%
Thermal Shock, MIL-STD-202, Method 107 F
Notes
(1) See table “Power Rating by Case Size”
(2) Power rating determined by application specific heat sink properties. Film temperature should not exceed 200 °C. See table “Power Rating
by Case Size” for more details
(3) Aluminum pads and aluminum wire bonds are sensitive to high moisture environments. Adequate application level packaging is required to
protect the components and wire bonds from moisture related damage
POWER RATING BY CASE SIZE
CHIP SIZE
mil (mm) (2)
BOND PAD SIZE
mil (mm)
DIE THICKNESS
mil (mm) (2)
TYPICAL R
THERMAL (1)
K/W
R MIN.
Ω
R MAX.
Ω
20 x 20 (0.5 x 0.5)
10 x 16 (0.25 x 0.41)
10 (0.25)
10
15
25
CASE SIZE
0202
0404
40 x 40 (1 x 1)
15 x 36 (0.38 x 0.91)
10 (0.25)
7
3.3
25
0606
60 x 60 (1.5 x 1.5)
20 x 56 (0.51 x 1.42)
10 (0.25)
5
1.8
25
0808
80 x 80 (2 x 2)
27 x 76 (0.69 x 1.93)
10 (0.25)
2
1.8
25
Notes
(1)
(2)
Typical R thermal between film and back contact. Does not include die attach joint (epoxy or solder)
Dimension tolerances are ± 0.05 mm (± 2 mil)
SCHEMATIC
R
PIN 1
Top contact
PIN 2
Back contact
Test pad
not used during
normal operation
PIN
1
PIN 2
Back contact
Document Number: 61107
2
For technical questions, contact: efi@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 29-Mar-2021
IGBR
www.vishay.com
Vishay Electro-Films
MATERIAL SPECIFICATIONS
PARAMETER
Chip Substrate Material
Oxidized silicon, 10 kÅ minimum SiO2
Film Material
Tantalum Nitride
Case Size
See table “Power Rating by Case Size”
Passivation
None
Number of Pads
1
Top Terminations Suitable for Heavy Gage Aluminum Wire-Bonding
Al (2.5 μm min.)
P = TiW (500 Å to 1000 Å)
Pd (2000 Å to 3000 Å)
Au (3000 Å to 5000 Å)
N = TiW (500 Å to 1000 Å)
Ni (6000 Å to 7000 Å)
Au (3000 Å to 5000 Å)
Back Termination
(for epoxy, lead (Pb)-free solder or silver compression assembly)
T = TiW (500 Å to 1000 Å)
Au (1000 Å to 3000 Å)
Ni (40 μ" minimum)
Au (40 μ" minimum)
MATERIAL SPECIFICATIONS
VERSION A (20 x 20)
IGBRA - 15 Ω to 25 Ω
VERSION B (40 x 40)
IGBRB - 3.3 Ω to 12.9 Ω
IGBRB - 13 Ω to 25 Ω
Document Number: 61107
3
For technical questions, contact: efi@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 29-Mar-2021
IGBR
www.vishay.com
Vishay Electro-Films
MATERIAL SPECIFICATIONS
VERSION C (60 x 60)
IGBRC - 3 Ω to 5.5 Ω
IGBRC - 1.8 Ω to 2.9 Ω
IGBRC - 5.6 Ω to 15.90 Ω
IGBRC - 16 Ω to 25 Ω
VERSION D (80 x 80)
IGBRD - 1.8 Ω to 5.5 Ω
IGBRD - 5.6 Ω to 14.9 Ω
IGBRD - 15 Ω to 24.9 Ω
GLOBAL PART NUMBER INFORMATION
Global Part Number: IGBRB3000CJOPCST
Global Part Number Description: IGBR 1 mm 3 Ω 5 % 300 ppm/°C PD Commercial Tape
I
G
B
R
B
MODEL
SIZE
RESISTANCE
(Ω)
IGBR
A = 20 x 20
B = 40 x 40
C = 60 x 60
D = 80 x 80
First 4 digits
are significant
figures of
resistance
High
power
backcontact
resistor
3
0
0
RESISTANCE
MULTIPLIER
CODE
TOL.
CODE
(%)
C = 0.001
B = 0.01
A = 0.1
J=5
K = 10
M = 20
L = 25
0
C
TCR
(ppm/°C)
J
O
BACKSIDE
TERMINATION
J = ± 500 P = TiW / Pd / Au
W = ± 350 N = TiW / Ni / Au
T = TiW / Au/
O = ± 300
Ni/Au (1)
M = ± 250
P
C
S
T
VISUAL
CLASS
PACKAGING
CODE
C = commercial
H = class H
K = class K
WS =
waffle pack
100 min., 1 mult.
ST = diced
on tape
Note
(1) See “Material Specifications” table for metal thickness
Document Number: 61107
4
For technical questions, contact: efi@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 29-Mar-2021
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Revision: 09-Jul-2021
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Document Number: 91000