IL2-X009T

IL2 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection A 1 6 B C 2 5 C NC 3 4 E FEATURES • Current transfer ratio (see order information) • Isolation test voltage 4420 VRMS • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS i179005 • UL / cUL 1577 LINKS TO ADDITIONAL RESOURCES • CSA • CQC GB4943.1-2011 • CQC GB8898-2011 Related Documents • FIMKO DESCRIPTION The IL2 is an optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The IL2 is especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. This coupler can be used also to replace relays and transformers in many digital interface applications such as CRT modulation. ORDERING INFORMATION I L 2 PART NUMBER - X 0 0 PACKAGE OPTION AGENCY CERTIFIED / PACKAGE 9 T Option 9 PACKAGE OPTION > 0.1 mm CTR (%) UL, cUL, CSA, CQC, FIMKO > 100 SMD-6, option 9 IL2-X009T Note • Additional options may be possible, please contact sales office ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Surge current IFSM 2.5 A Power dissipation Pdiss 100 mW 1.33 mW/°C Derate linearly from 25 °C Document Number: 83612 1 For technical questions, contact: optocoupler.answers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.7, 15-Apr-2021 IL2 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT OUTPUT Collector emitter breakdown voltage BVCEO 70 V Emitter base breakdown voltage BVEBO 7 V Collector base breakdown voltage BVCBO 70 V IC 50 mA IC 400 mA Pdiss 200 mW 2.6 mW/°C Collector current t < 1.0 ms Power dissipation Derate linearly from 25 °C COUPLER Package power dissipation Ptot Derate linearly from 25 °C 250 mW 3.3 mW/°C Storage temperature Tstg -40 to +150 °C Operating temperature Tamb -40 to +100 °C Junction temperature Tj 125 °C Tsld 260 °C Soldering temperature (1) 2.0 mm from case bottom Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP) ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 60 mA VF - 1.25 1.65 V Breakdown voltage IR = 10 μA VBR 6 30 - V Reverse current VR = 6.0 V IR - 0.01 10 μA INPUT Forward voltage Capacitance VR = 0 V, f = 1.0 MHz Thermal resistance junction to lead CO - 40 - pF Rthjl - 750 - K/W OUTPUT Collector emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE - 6.8 - pF Collector base capacitance VCB = 5.0 V, f = 1.0 MHz CCB - 8.5 - pF Emitter base capacitance VEB = 5.0 V, f = 1.0 MHz CEB - 11 - pF nA Collector emitter leakage voltage Collector emitter saturation voltage Base emitter voltage VCE = 10 V ICEO - 5 50 ICE = 1.0 mA, IB = 20 μA VCEsat - 0.25 - V VCE = 10 V, IB = 20 μA VBE - 0.65 - V DC forward current gain VCE = 10 V, IB = 20 μA hFE 200 650 1800 DC forward current gain saturated VCE = 0.4 V, IB = 20 μA hFEsat 120 400 600 Rthjl - 500 - K/W CIO - 0.6 - pF - 1014 - Ω Thermal resistance junction to lead COUPLER Capacitance (input to output) Insulation resistance VI-O = 0 V, f = 1.0 MHz VI-O = 500 V RS Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements Document Number: 83612 2 For technical questions, contact: optocoupler.answers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.7, 15-Apr-2021 IL2 www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Current transfer ratio (collector emitter saturated) IF = 10 mA, VCE = 0.4 V CTRCEsat - 170 - % Current transfer ratio (collector emitter) IF = 10 mA, VCE = 10 V CTRCE 100 200 500 % Current transfer ratio (collector base) IF = 10 mA, VCB = 9.3 V CTRCB - 0.25 - % TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Current time VCE = 5 V, RL = 75 Ω, tP measured at 50 % of output IF - 4 - mA Delay time VCE = 5 V, RL = 75 Ω, tP measured at 50 % of output tD - 1.7 - μs Rise time VCE = 5 V, RL = 75 Ω, tP measured at 50 % of output tr - 2.6 - μs Storage time VCE = 5 V, RL = 75 Ω, tP measured at 50 % of output ts - 0.4 - μs Fall time VCE = 5 V, RL = 75 Ω, tP measured at 50 % of output tf - 2.2 - μs Propagation H to L VCE = 5 V, RL = 75 Ω, tP measured at 50 % of output tPHL - 1.2 - μs Propagation L to H VCE = 5 V, RL = 75 Ω, tP measured at 50 % of output tPLH - 2.3 - μs Current time VCE = 0.4 V, RL = 1.0 kΩ, VCL = 5 V, VTH = 1.5 V IF - 5 - mA Delay time VCE = 0.4 V, RL = 1.0 kΩ, VCL = 5 V, VTH = 1.5 V tD - 1 - μs Rise time VCE = 0.4 V, RL = 1.0 kΩ, VCL = 5 V, VTH = 1.5 V tr - 2 - μs Storage time VCE = 0.4 V, RL = 1.0 kΩ, VCL = 5 V, VTH = 1.5 V tS - 5.4 - μs Fall time VCE = 0.4 V, RL = 1.0 kΩ, VCL = 5 V, VTH = 1.5 V tf - 13.5 - μs Propagation H to L VCE = 0.4 V, RL = 1.0 kΩ, VCL = 5 V, VTH = 1.5 V tPHL - 5.4 - μs Propagation L to H VCE = 0.4 V, RL = 1.0 kΩ, VCL = 5 V, VTH = 1.5 V tPLH - 7.4 - μs TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Common mode rejection output high VCM = 50 VP-P, RL = 1 kΩ, IF = 10 mA |CMH| - 5000 - V/μs Common mode rejection output low VCM = 50 VP-P, RL = 1 kΩ, IF = 10 mA |CML| - 5000 - V/μs CCM - 0.01 - pF SWITCHING CHARACTERISTICS PARAMETER NON-SATURATED SATURATED SATURATED COMMON MODE TRANSIENT IMMUNITY PARAMETER Common mode coupling capacitance Document Number: 83612 3 For technical questions, contact: optocoupler.answers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.7, 15-Apr-2021 IL2 www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER Climatic classification TEST CONDITION SYMBOL According to IEC 68 part 1 Comparative tracking index VALUE UNIT 40 / 100 / 21 CTI 175 VISO 4420 VRMS Maximum transient isolation voltage VIOTM 10 000 Vpeak Maximum repetitive peak isolation voltage VIORM 890 Vpeak VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Output safety power PSO 400 mW Input safety current ISI 275 mA Safety temperature TS 175 °C ≥7 mm ≥7 mm ≥ 0.4 mm Maximum rated withstanding isolation voltage Isolation resistance t = 1 min Creepage distance Clearance distance Insulation thickness DTI Note • As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits Document Number: 83612 4 For technical questions, contact: optocoupler.answers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.7, 15-Apr-2021 IL2 www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) IF VCC = 5 V IF = 10 mA tD VO VO f = 10 kHz DF = 50 % tPLH tR VTH = 1.5 V R L = 75 Ω tPHL iil1_01 tS tF iil1_04 Fig. 1 - Non-Saturated Switching Schematic Fig. 4 - Saturated Switching Timing 1.4 f = 10 kHz DF = 50 % RL VO I = 10 mA F VF - Forward Voltage (V) VCC = 5 V 1.3 TA = - 55 °C 1.2 TA = 25 °C 1.1 1.0 0.9 TA = 100 °C 0.8 0.7 0.1 iil1_02 Fig. 2 - Saturated Switching Schematic 1.5 NCTR - Normalized CTR tPHL tPLH tS 10 100 Fig. 5 - Forward Voltage vs. Forward Current IF VO 1 I F - Forward Current (mA) iil1_05 Normalized to: VCE = 10 V, IF = 10 mA CTRce(sat) VCE = 0.4 V 1.0 0.5 NCTR(SAT) NCTR 50 % 0.0 iil1_03 tD tR 0.1 tF Fig. 3 - Non-Saturated Switching Timing iil1_06 1 10 100 I F - LED Current (mA) Fig. 6 - Normalized Non-Saturated and Saturated CTR vs. LED Current Document Number: 83612 5 For technical questions, contact: optocoupler.answers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.7, 15-Apr-2021 IL2 www.vishay.com Vishay Semiconductors 35 Normalized to: VCE = 10 V,IF = 10 mA Ice - Collector Current (mA) NCTR - Normalized CTR 1.5 CTRce(sat) VCE = 0.4 V 1.0 TA = 50 °C 0.5 NCTR(SAT) NCTR 0.0 0.1 10 50 °C 20 15 70 °C 25 °C 100 °C 10 5 0 100 I F - LED Current (mA) 10 iil1_10 Fig. 7 - Normalized Non-Saturated and Saturated CTR vs. LED Current 20 30 40 50 60 IF - LED Current (mA) Fig. 10 - Collector Emitter Current vs. Temperature and LED Current 10 5 Normalized to: VCE = 10 V, IF = 10 mA 1.0 CTRce(sat) VCE = 0.4 V TA = 70 °C 0.5 NCTR(SAT) NCTR I CEO - Collector Emitter (nA) 1.5 NCTR - Normalized CTR 25 0 1 iil1_07 0.1 1 10 100 I F - LED Current (mA) iil1_08 10 4 Worst case 10 3 10 2 VCE = 10 V 10 1 Typical 10 0 10 -1 10 -2 - 20 0.0 1.5 NCTRcb - Normalized CTRcb 1.0 TA = 100 °C 0.5 NCTR(SAT) NCTR 0.0 0.1 iil1_09 20 40 60 80 100 Fig. 11 - Collector Emitter Leakage Current vs.Temperature 1.5 Normalized to: VCE = 10 V, IF = 10 mA CTRce(sat) VCE = 0.4 V 0 TA - Ambient Temperature (°C) iil1_11 Fig. 8 - Normalized Non-Saturated and Saturated CTR vs. LED Current NCTR - Normalized CTR 30 Normalized to: IF = 10 mA Vcb = 9.3 V 1.0 0.5 25 °C 50 °C 70 °C 0.0 1 10 100 IF - LED Current (mA) Fig. 9 - Normalized Non-Saturated and Saturated CTR, Tamb = 100 °C vs. LED Current 0.1 iil1_12 1 10 100 IF - LED Current (mA) Fig. 12 - Normalized CTRcb vs. LED Current and Temperature Document Number: 83612 6 For technical questions, contact: optocoupler.answers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.7, 15-Apr-2021 IL2 www.vishay.com Vishay Semiconductors 1000 1.5 70 °C Icb - Collector Base Photocurrent - µA NhFE(sat) - Normalized SaturatedhFE Icb = 1.0357 * IF ^ 1.3631 100 10 1 0.1 50 °C 25 °C 1.0 Normalized to: VCE = 10 V IB = 20 µA - 20 °C 0.5 VCE = 0.4 V 0.01 0.1 0.0 1 10 100 IF - LED Current (mA) iil1_13 1 10 Fig. 13 - Collector Base Photocurrent vs. LED Current 100 1000 IB - Base Current (µA) iil1_16 Fig. 16 - Normalized Saturated hFE vs. Base Current and Temperature 1000 1 NIB-TA = - 20 °C NIB-TA = 25 °C NIB-TA = 50 °C NIB-TA = 70 °C 0.1 0.01 0.1 1 10 100 2.0 1.5 tpLH 1 100 0.1 iil1_17 Fig. 14 - Normalized Photocurrent vs. IF and Temperature tpHL 10 IF - LED Current (mA) iil1_14 2.5 IF = 10 mA VCC = 5 V, Vth = 1.5 V tpHL - Propagation Delay (µs) Normalized to: IF = 10 mA tp - Propagation Delay (µs) Normalized Photocurrent 10 1.0 1 10 100 RL - Collector Load Resistor (kΩ) Fig. 17 - Propagation Delay vs. Collector Load Resistor 1.2 NhFE - Normalized hFE 70 °C 50 °C 1.0 25 °C Normalized to: Ib = 20 µA VCE = 10 V - 20 °C 0.8 0.6 0.4 1 iil1_15 10 100 1000 Ib - Base Current (µA) Fig. 15 - Normalized Non-Saturated hFE vs. Base Current and Temperature Document Number: 83612 7 For technical questions, contact: optocoupler.answers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.7, 15-Apr-2021 IL2 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 3 2 1 4 5 6 Pin one ID 6.4 ± 0.1 Option 9 9.53 10.03 8.6 ± 0.1 7.62 ref. ISO method A 0.102 0.249 0.25 typ. 0.51 1.02 15° max. 8.00 min. Document Number: 83612 8 For technical questions, contact: optocoupler.answers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.7, 15-Apr-2021 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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