IL211AT

IL211AT

  • 厂商:

    TFUNK(威世)

  • 封装:

    SOIC8

  • 描述:

    SOP8 单向光耦 Viso=4000Vrms VF(typ)=1.3V IF=60mA Vo=30V CTR≥20%

  • 详情介绍
  • 数据手册
  • 价格&库存
IL211AT 数据手册
IL211AT, IL212AT, IL213AT www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package FEATURES A 1 8 NC • Isolation test voltage, 4000 VRMS K 2 7 B NC 3 6 C • Industry standard SOIC-8 surface mountable package NC 4 5 E • Compatible with dual wave, vapor phase and IR reflow soldering i179002-1 V D E i179025 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The IL211AT, IL212AT, IL213AT are optically coupled pairs with a gallium arsenide infrared LED and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. AGENCY APPROVALS The IL211AT, IL212AT, IL213AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. • DIN EN 60747-5-5 (pending) (1) • UL1577, file no. E52744 system code Y • cUL - file no. E52744, equivalent to CSA bulletin 5A • DIN EN 60747-5-2 (VDE 0884) (1) Note (1) Available upon request, as option 1 A choice of 20 %, 50 %, and 100 % minimum CTR at IF = 10 mA makes these optocouplers suitable for a variety of different applications. ORDERING INFORMATION SOIC-8 I L 2 1 # A T 6.1 mm PART NUMBER CTR (%) AGENCY CERTIFIED/PACKAGE 10 mA UL, cUL > 20 > 50 > 100 SOIC-8 IL211AT IL212AT IL213AT ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Peak reverse voltage VR 6 V Forward continuous current IF 60 mA Power dissipation Pdiss Derate linearly from 25 °C 90 mW 1.2 mW/°C 30 V V OUTPUT Collector emitter breakdown voltage BVCEO Emitter collector breakdown voltage BVECO 7 VCBO 70 V ICMAX. DC 50 mA ICMAX. 100 mA Pdiss 150 mW 2 mW/°C Collector base breakdown voltage ICMAX. DC ICMAX. Power dissipation Derate linearly from 25 °C t < 1 ms Document Number: 83615 1 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.9, 21-Dec-10 IL211AT, IL212AT, IL213AT www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VISO 4000 VRMS Ptot 240 mW 3.2 mW/°C Tstg -55 to +150 °C Tamb -55 to +100 °C 10 s COUPLER Isolation test voltage Total package dissipation LED and detector Derate linearly from 25 °C Storage temperature Operating temperature Soldering time at 260 °C Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF - 1.3 1.5 V Reverse current VR = 6 V IR - 0.1 100 μA Capacitance VR = 0 V CO - 13 - pF OUTPUT Collector emitter breakdown voltage IC = 10 μA BVCEO 30 - - V Emitter collector breakdown voltage IE = 10 μA BVECO 7 - - V Collector dark current VCE = 10 V ICEO - 5 50 nA Collector emitter capacitance VCE = 0 V CCE - 10 IF = 10 mA VCEsat - - 0.4 V 1s VISO 4000 - - VRMS CIO - 0.5 50 pF RIO - 100 - GΩ BVCEO 30 - - V pF COUPLER Saturation voltage, collector emitter Isolation test voltage Capacitance (input to output) Resistance (input to output) Collector emitter breakdown voltage IC = 10 μA Note • Minimum and maximum values were tested requirements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER Current transfer ratio TEST CONDITION IF = 10 mA, VCE = 5 V PART SYMBOL MIN. TYP. MAX. UNIT IL211AT CTR 20 50 - % IL212AT CTR 50 80 - % IL213AT CTR 100 130 - % PART SYMBOL MIN. TYP. MAX. UNIT ton, toff - 3 - μs SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION Switching time IC = 2 mA, RL = 100 Ω, VCC = 10 V Document Number: 83615 2 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.9, 21-Dec-10 IL211AT, IL212AT, IL213AT www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION Climatic classification SYMBOL MIN. TYP. MAX. - 55 / 100 / 21 399 According to IEC 68 part 1 Comparative tracking index CTI UNIT 175 - VIOTM 6000 - - V VIORM 560 - - V PSO - - 350 mW ISI - - 150 mA TSI - - 165 °C Creepage distance 4 - - mm Clearance distance 4 - - mm Insulation thickness 0.2 - - mm Note • As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “Safe Electrical Insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 ICE0 - Leakage Current (nA) VF - Forward Voltage (V) 1.8 1.6 Tamb = 0 °C Tamb = - 40 °C 1.4 Tamb = - 55 °C 1.2 Tamb = 25 °C Tamb = 50 °C Tamb = 75 °C 1.0 0.8 Tamb = 100 °C 0.6 0.1 1 10 100 IF - Forward Current (mA) 22462 IF = 0 mA 1000 100 VCE = 12 V 0.1 0.01 0.001 - 60 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 3 - Leakage Current vs. Ambient Temperature 50 30 45 IF = 30 mA 40 IC - Collector Current (mA) IC - Collector Current (mA) VCE = 24 V 1 22466 Fig. 1 - Forward Voltage vs. Forward Current IF = 20 mA 35 30 IF = 15 mA 25 IF = 10 mA 20 15 IF = 5 mA 10 5 25 IF = 25 mA 20 IF = 10 mA 15 10 0 IF = 5 mA 5 IF = 1 mA IF = 2 mA 0 0 22463 VCE = 40 V 10 1 2 3 4 5 6 7 8 VCE - Collector Emitter Voltage (NS) (V) Fig. 2 - Collector Current vs. Collector Emitter Voltage (non-saturated) 0 22464 0.1 0.2 0.3 0.4 VCE - Collector Emitter Voltage (sat) (V) Fig. 4 - Collector Current vs. Collector Emitter Voltage (saturated) Document Number: 83615 3 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.9, 21-Dec-10 IL211AT, IL212AT, IL213AT www.vishay.com Vishay Semiconductors 1.2 1.4 NCTR - Normalized CTR (NS) NCTR - Normalized CTR (sat) VCE = 5 V IF = 10 mA 1.0 IF = 5 mA 0.8 0.6 0.4 IF = 1 mA 0.2 0 - 60 - 40 - 20 20 40 60 Tamb = - 55 °C 0.8 0.6 0.2 0.8 IF = 1 mA 0.4 0.2 0 20 40 60 Tamb = 0 °C Tamb = - 40 °C 0.8 Tamb = - 55 °C 0.6 Tamb = 25 °C 0.4 Tamb = 50 °C 0.2 Tamb = 75 °C Tamb = 100 °C 0 0.1 22485 1 10 Tamb = - 40 °C Tamb = - 55 °C Tamb = 50 °C Tamb = 75 °C Tamb = 100 °C Fig. 7 - Normalized CTR (non-saturated) vs. Forward Current 1 10 100 IF - LED Current (mA) Fig. 9 - Normalized Photocurrent vs. LED Current 2.0 VCE = 0.4 V Tamb = 100 °C 1.6 Tamb = 75 °C Tamb = 50 °C 1.2 Tamb = 25 °C 0.8 Tamb = 0 °C Tamb = - 40 °C 0.4 Tamb = - 55 °C 0 1 100 IF - Forward Current (mA) Tamb = 25 °C 0.1 0.1 NHFE (sat) - Normalized Saturated HFE NCTR - Normalized CTR (NS) VCE = 5 V 1.0 Tamb = 0 °C 22487 Fig. 6 - Normalized CTR (saturated) vs. Ambient Temperature 1.2 1 0.01 80 100 Tamb - Ambient Temperature (°C) 22489 100 VCE = 5 V 0 - 60 - 40 - 20 10 10 NIBP - Normalized (IBP) NCTR - Normalized CTR (sat) IF = 10 mA 1 IF - Forward Current (mA) Fig. 8 - Normalized CTR (saturated) vs. Forward Current VCE = 0.4 V IF = 5 mA 0.6 Tamb = 75 °C Tamb = 100 °C 0.1 1.4 1.0 Tamb = 50 °C 22486 Fig. 5 - Normalized CTR (non-saturated) vs. Ambient Temperature 1.2 Tamb = 25 °C 0.4 80 100 Tamb - Ambient Temperature (°C) 22490 Tamb = - 40 °C 1.0 0.0 0 VCE = 0.4 V Tamb = 0 °C 1.2 22488 10 100 IB - Base Current (μA) Fig. 10 - Normalized Saturated HFE vs. Base Current Document Number: 83615 4 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.9, 21-Dec-10 IL211AT, IL212AT, IL213AT www.vishay.com Vishay Semiconductors 1000 0 - 20 ton, toff - Switching Time (μs) VCE = 5 V Phase (deg) - 40 - 60 - 80 - 100 - 120 - 140 100 ton 1 0.1 10 100 1000 f (kHz) 22470 1 10 100 RL - Load Resistance (kΩ) Fig. 13 - Switching Time vs. Load Resistance 100 1000 ton, toff - Switching Time (μs) VCC = 5 V FCTR (kHz) 0.1 22491 Fig. 11 - FCTR vs. Phase Angle toff 10 - 160 1 VCE = 5 V, IF = 10 mA Pulse width = 100 ms f = 1 kHz 100 10 1 0.1 22471 1 10 IC - Collector Current (mA) Fig. 12 - FCTR vs. IC VCE = 5 V, IF = 10 mA Pulse width = 100 μs f = 1 kHz, RL = 2.2 kΩ toff 10 ton 1 100 22492 10 100 1000 10 000 RBE - Base Emitter Resistance (kΩ) Fig. 14 - Switching Time vs. Base Emitter Resistance Document Number: 83615 5 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.9, 21-Dec-10 IL211AT, IL212AT, IL213AT www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 3.05 ± 0.13 R 0.13 CL 6.10 1.27 3.91 ± 0.13 0.36 0.91 4.32 6.6 0.41 Pin one ID 1.14 7° 4.88 ± 0.13 40° 0.38 ± 0.05 1.49 ± 0.13 ISO method A 3.18 ± 0.13 0.20 5° max. 0.1 0.2 R 0.25 max. 1.27 typ. Lead coplanarity ± 0.04 max. 0.51 ± 0.10 2 places 0.53 i178003 PACKAGE MARKING (example) 213A V YWW Y 68 21764-102 Document Number: 83615 6 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.9, 21-Dec-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000
IL211AT
物料型号:IL211AT, IL212AT, IL213AT

器件简介:这些光耦器件包含一个镓砷化物红外发光二极管和硅NPN光电晶体管,能够在输入和输出之间保持高度电气隔离的同时传输信号信息,包括直流电平。

引脚分配:器件采用标准SOIC-8小型轮廓封装,适用于表面贴装,非常适合高密度应用。

参数特性: - 输入端具有6V的峰值反向电压和60mA的连续前向电流。 - 输出端具有30V的集电极-发射极击穿电压。 - 光耦器件的隔离测试电压为4000VRMS。 - 提供20%,50%,100%的最小CTR(电流传输比)选项。

功能详解: - 光耦器件能够在电气隔离的同时传输信号信息,适合于多种不同的应用场景。 - 器件的隔离特性可以用于保护低压电路不受高压电路的影响。

应用信息: - 光耦器件广泛应用于高密度应用中,如数据通信、测量和控制系统、电源管理、医疗设备等。

封装信息:标准SOIC-8小型轮廓封装,适合表面贴装,尺寸信息和标记示例在文档中有详细说明。

典型特性:文档提供了关于正向电压、饱和电压、隔离测试电压、CTR(电流传输比)等的图表和数据。

安全和绝缘等级:文档还提供了关于气候分类、比较跟踪指数、VIOTM、VIORM、Pso、SI、TsI、爬电距离、间隙距离和绝缘厚度等的安全和绝缘等级信息。
IL211AT 价格&库存

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IL211AT
  •  国内价格 香港价格
  • 1+8.921691+1.14544
  • 10+6.2473210+0.80209
  • 100+4.61321100+0.59229
  • 500+3.88811500+0.49919
  • 1000+3.650431000+0.46868

库存:2992

IL211AT
  •  国内价格 香港价格
  • 2000+3.448802000+0.44279
  • 4000+3.277904000+0.42085
  • 6000+3.190306000+0.40960
  • 10000+3.0914310000+0.39691
  • 14000+3.0326714000+0.38936
  • 20000+2.9753620000+0.38200

库存:2992