IMBD4148
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Vishay Semiconductors
Small Signal Switching Diode
FEATURES
• Silicon epitaxial planar diodes
3
• Fast switching diode in case SOT-23, especially
suited for automatic insertion.
• AEC-Q101 qualified available
1
• Base P/N-E3 - RoHS-compliant, commercial
grade
2
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
CIRCUIT CONFIGURATION
TYPE MARKING
REMARKS
Single
A2
Tape and reel
SYMBOL
VALUE
UNIT
VR
75
V
VRM
100
V
f 50 Hz
IF(AV)
150
mA
t < 1 s, Tj = 25 °C
IFSM
500
mA
up to Tamb = 25 °C
Ptot
350
mW
SYMBOL
VALUE
UNIT
RthJA
450
°C/W
Tj
150
°C
Storage temperature range
Tstg
-65 to +150
°C
Operating temperature range
Top
-55 to +150
°C
IMBD4148
ORDERING CODE
IMBD4148-E3-08 or IMBD4148-E3-18
IMBD4148-HE3-08 or IMBD4148-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Peak reverse voltage
Rectified current (average) half wave
rectification with resist. (1)
Surge forward current
Power dissipation
(1)
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Thermal resistance junction to ambient air (1)
Junction temperature
Note
(1) Device on fiberglass substrate, see layout on next page
Rev. 1.8, 13-Feb-18
Document Number: 85731
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IMBD4148
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
IF = 10 mA
VF
1.0
V
VR = 70 V
IR
2500
nA
VR = 70 V, Tj = 150 °C
IR
50
μA
VR = 25 V, Tj = 150 °C
IR
30
μA
VF = VR = 0
CD
4
pF
IF = 10 mA to iR = 1 mA,
VR = 6 V, RL = 100
trr
4
ns
Forward voltage
Leakage current
Diode capacitance
Reverse recovery time
(see figures)
MIN.
TYP.
MAX.
UNIT
LAYOUT FOR RthJA TEST
Thickness:
Fiberglass 1.5 mm (0.059 inches)
Copper leads 0.3 mm (0.012 inches)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
15 (0.59)
2 (0.8)
0.8 (0.03)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
10000
T j = 100 ° C
10
25 ° C
1
0.1
0.01
rf - Dynamic Forward Resistance (Ω)
I F - Forward Current ( mA )
1000
T j = 25 ° C
f = 1 kHz
1000
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
18661
VF - Forward Voltage ( V )
Fig. 1 - Forward Current vs. Forward Voltage
18662
10
1
0.01
0.1
1
10
IF - Forward Current (mA)
100
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Rev. 1.8, 13-Feb-18
Document Number: 85731
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IMBD4148
Ptot - Admissible Power Dissipation ( mW )
www.vishay.com
Vishay Semiconductors
10000
I R - Leakage Current ( nA )
500
400
300
200
100
0
0
100
10
VR = 20 V
1
20 40 60 80 100 120 140 160180 200
Tamb - Ambient Temperature ( °C )
18663
0
18665
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
CD (VR)/CD (0 V) - Relative Capacitance (pF)
1000
20
40 60 80 100 120 140 160 180 200
Tj - Junction Temperature ( ° C )
Fig. 5 - Leakage Current vs. Junction Temperature
T j = 25 ° C
f = 1 MHz
1.1
1.0
0.9
0.8
0.7
0
2
4
6
8
10
VR - Reverse Voltage (V)
18664
Fig. 4 - Relative Capacitance vs. Reverse Voltage
100
Peak Forward Current ( A )
I FRM - Admissible Repetitive
I
18666
10
ν= 0
ν = t p /T
tp
T = 1/f p
I FRM
t
T
0.1
0.2
1
0.1
10 -5
0.5
10 -4
10 -3
10 -2
10 -1
1
10
tp - Pulse Length ( s )
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
Rev. 1.8, 13-Feb-18
Document Number: 85731
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IMBD4148
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
1.15 (0.045)
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.1 (0.004) max.
0.550 ref. (0.022 ref.)
0.9 (0.035)
3.1 (0.122)
2.8 (0.110)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0° t
0.5 (0.020)
0.45 (0.018)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
0.9 (0.035)
0.7 (0.028)
2 (0.079)
1.43 (0.056)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Rev. 1.8, 13-Feb-18
Document Number: 85731
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000