IRF530PBF-BE3

IRF530 www.vishay.com Vishay Siliconix Power MOSFET D FEATURES S • • • • • • • TO-220AB G G D S N-Channel MOSFET Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 10 V 26 Qgs (nC) 5.5 Qgd (nC) DESCRIPTION 0.16 Qg max. (nC) Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. 11 Configuration Dynamic dV/dt rating Available Repetitive avalanche rated 175 °C operating temperature Available Fast switching Ease of paralleling Available Simple drive requirements Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Single ORDERING INFORMATION Package Lead (Pb)-free TO-220AB IRF530PbF IRF530PbF-BE3 Lead (Pb)-free and halogen-free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 100 Gate-source voltage VGS ± 20 Continuous drain current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed drain current a ID IDM Linear derating factor Single pulse avalanche energy b EAS UNIT V 14 10 A 56 0.59 W/°C 69 mJ current a IAR 14 A Repetitive avalanche energy a EAR 8.8 mJ Repetitive avalanche Maximum power dissipation TC = 25 °C Peak diode recovery dV/dt c Operating junction and storage temperature range Soldering recommendations (peak temperature) d Mounting torque For 10 s 6-32 or M3 screw PD 88 W dV/dt 5.5 V/ns TJ, Tstg -55 to +175 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 528 μH, Rg = 25 Ω, IAS = 14 A (see fig. 12) c. ISD ≤ 14 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case S21-0819-Rev. C, 02-Aug-2021 Document Number: 91019 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF530 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - Maximum junction-to-case (drain) RthJC - 1.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 100 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V nA Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance VGS = ± 20 V - - ± 100 VDS = 100 V, VGS = 0 V - - 25 VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 - - 0.16 Ω 5.1 - - S IGSS IDSS RDS(on) gfs ID = 8.4 A b VGS = 10 V VDS = 50 V, ID = 8.4 A b μA Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 14 A, VDS = 80 V, see fig. 6 and 13 b - 670 - - 250 - - 60 - - - 26 - - 5.5 pF Gate-source charge Qgs Gate-drain charge Qgd - - 11 Turn-on delay time td(on) - 10 - tr VDD = 50 V, ID = 14 A Rg = 12 Ω, RD = 3.6 Ω, see fig. 10 b - 34 - - 23 - - 24 - f = 1 MHz, open drain 1.0 - 4.7 - 4.5 - - 7.5 - - - 14 - - 56 - - 2.5 - 150 280 ns - 0.85 1.7 μC Rise time Turn-off delay time td(off) Fall time tf Gate input resistance Rg Internal drain inductance LD Internal source inductance LS Between lead, 6 mm (0.25") from package and center of die contact D nC ns Ω nH G S Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulsed diode forward current a Body diode voltage IS ISM VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Forward turn-on time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 14 A, VGS = 0 S Vb TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μs b V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0819-Rev. C, 02-Aug-2021 Document Number: 91019 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF530 www.vishay.com Vishay Siliconix VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V ID, Drain Current (A) Top 101 4.5 V 100 20 µs Pulse Width TC = 25 °C 10-1 100 3.5 3.0 ID = 14 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60- 40 - 20 0 101 VDS, Drain-to-Source Voltage (V) 91019_01 RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) TJ, Junction Temperature (°C) 91019_04 Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature 1400 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 1200 4.5 V Capacitance (pF) ID, Drain Current (A) Top 101 1000 Ciss 800 600 Coss 400 100 10-1 100 0 101 100 VDS, Drain-to-Source Voltage (V) 91019_02 Crss 200 20 µs Pulse Width TC = 175 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage ID, Drain Current (A) 175 °C 101 100 20 µs Pulse Width VDS = 50 V 4 5 6 7 8 9 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S21-0819-Rev. C, 02-Aug-2021 VGS, Gate-to-Source Voltage (V) 20 25 °C 101 VDS, Drain-to-Source Voltage (V) 91019_05 Fig. 2 - Typical Output Characteristics, TC = 175 °C 91019_03 20 40 60 80 100 120 140 160 180 ID = 14 A VDS = 80 V 16 VDS = 50 V VDS = 20 V 12 8 4 For test circuit see figure 13 0 10 0 91019_06 5 10 15 20 25 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91019 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF530 www.vishay.com Vishay Siliconix ISD, Reverse Drain Current (A) VDS VGS RD D.U.T. RG + - VDD 175 °C 101 25 °C 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit 100 VGS = 0 V 0.4 0.8 1.2 2.0 1.6 VSD, Source-to-Drain Voltage (V) 91019_07 VDS 90 % Fig. 7 - Typical Source-Drain Diode Forward Voltage 10 % VGS 103 td(on) tr td(off) tf 5 Operation in this area limited by RDS(on) ID, Drain Current (A) 2 Fig. 10b - Switching Time Waveforms 102 5 10 µs 2 100 µs 10 1 ms 5 10 ms 2 1 5 TC = 25 °C TJ = 175 °C Single Pulse 2 0.1 0.1 2 5 1 2 5 10 2 5 2 102 5 103 VDS, Drain-to-Source Voltage (V) 91019_08 Fig. 8 - Maximum Safe Operating Area 14 ID, Drain Current (A) 12 10 8 6 4 2 0 25 91019_09 50 75 100 125 150 175 TC, Case Temperature (°C) Fig. 9 - Maximum Drain Current vs. Case Temperature S21-0819-Rev. C, 02-Aug-2021 Document Number: 91019 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF530 www.vishay.com Vishay Siliconix Thermal Response (ZthJC) 10 1 0 - 0.5 0.2 PDM 0.1 0.05 0.1 t1 0.02 0.01 t2 Single Pulse (Thermal Response) Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) 91019_11 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - IAS V DD VDS 10 V tp 0.01 Ω IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 200 ID 5.7 A 9.9 A Bottom 14 A Top 160 120 80 40 0 VDD = 25 V 25 91019_12c 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current S21-0819-Rev. C, 02-Aug-2021 Document Number: 91019 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF530 www.vishay.com Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ QG 10 V 0.2 µF 12 V 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive Period P.W. D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91019. S21-0819-Rev. C, 02-Aug-2021 Document Number: 91019 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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