IRF614L

IRF614 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D • Dynamic dV/dt rating TO-220AB • Repetitive avalanche rated Available • Fast switching G Available • Ease of paralleling • Simple drive requirements G D S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details N-Channel MOSFET PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω) VGS = 10 V Qg max. (nC) DESCRIPTION 2.0 Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF614PbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 250 Gate-source voltage VGS ± 20 Continuous drain current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed drain current a ID IDM Linear derating factor UNIT V 2.7 1.7 A 8.0 0.29 W/°C EAS 61 mJ current a IAR 2.7 A Repetitive avalanche energy a EAR 3.6 mJ Single pulse avalanche energy b Repetitive avalanche Maximum power dissipation TC = 25 °C Peak diode recovery dV/dt c Operating junction and storage temperature range Soldering recommendations (peak temperature) d Mounting torque For 10 s 6-32 or M3 screw PD 36 W dV/dt 4.8 V/ns TJ, Tstg -55 to +150 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 13 mH, Rg = 25 Ω, IAS = 2.7 A (see fig. 12) c. ISD ≤ 2.7 A, dI/dt ≤ 65 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S21-0340-Rev. C, 12-Apr-2021 Document Number: 91025 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF614 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - Maximum junction-to-case (drain) RthJC - 3.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage VDS VGS = 0 V, ID = 250 μA 250 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.39 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS Drain-source on-state resistance Forward transconductance RDS(on) gfs VDS = 250 V, VGS = 0 V - - 25 VDS = 200 V, VGS = 0 V, TJ = 125 °C - - 250 - - 2.0 Ω 0.90 - - S - 140 - - 42 - ID = 1.6 A b VGS = 10 V VDS = 50 V, ID = 1.6 Ab μA Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time Rise time Turn-off delay time VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 pF - 9.6 - - - 8.2 - - 1.8 - - 4.5 td(on) - 7.0 - tr VDD = 125 V, ID = 2.7 A, Rg = 24 Ω, RD = 45 Ω, see fig. 10 b - 7.6 - - 16 - - 7.0 - f = 1 MHz, open drain 2.4 - 14.7 - 4.5 - - 7.5 - - - 2.7 - - 8.0 - - 2.0 - 190 390 ns - 0.64 1.3 μC td(off) Fall time tf Gate input resistance Rg Internal drain inductance LD Internal source inductance LS VGS = 10 V ID = 2.7 A, VDS = 200 V see fig. 6 and 13 b Between lead, 6 mm (0.25") from package and center of die contact D nC ns Ω nH G S Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulsed diode forward current a Body diode voltage IS ISM VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Forward turn-on time ton MOSFET symbol showing the integral reverse p - n junction diode D G TJ = 25 °C, IS = 2.7 A, VGS = 0 A S Vb TJ = 25 °C, IF = 2.7 A, dI/dt = 100 A/μs b V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0340-Rev. C, 12-Apr-2021 Document Number: 91025 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF614 www.vishay.com Vishay Siliconix VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V ID, Drain Current (A) Top 100 10-1 4.5 V 20 µs Pulse Width TC = 25 °C 10-2 10-1 100 101 VDS, Drain-to-Source Voltage (V) 91025_01 RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 2.5 ID = 2.7 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 TJ, Junction Temperature (°C) 91025_04 Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature 100 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 250 Capacitance (pF) ID, Drain Current (A) 300 VGS Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 4.5 V 10-1 20 40 60 80 100 120 140 160 200 Ciss 150 100 Coss 50 20 µs Pulse Width TC = 150 °C 10-2 10-1 100 101 Crss 0 100 VDS, Drain-to-Source Voltage (V) 91025_05 VDS, Drain-to-Source Voltage (V) 91025_02 Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 100 150 °C 25 °C 10-1 10-2 20 µs Pulse Width VDS = 50 V VGS, Gate-to-Source Voltage (V) 20 ID, Drain Current (A) 101 ID = 2.7 A VDS = 200 V 16 VDS = 125 V 12 VDS = 50 V 8 4 For test circuit see figure 13 0 4 91025_03 5 6 7 8 9 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S21-0340-Rev. C, 12-Apr-2021 10 0 91025_06 2 4 6 8 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91025 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF614 www.vishay.com Vishay Siliconix RD VDS ISD, Reverse Drain Current (A) 101 VGS D.U.T. RG + - VDD 10 V 150 °C Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 25 °C 100 Fig. 10a - Switching Time Test Circuit VGS = 0 V 0.5 0.7 0.9 1.1 1.3 1.5 90 % VSD, Source-to-Drain Voltage (V) 91025_07 Fig. 7 - Typical Source-Drain Diode Forward Voltage 10 % VGS td(on) 102 tr td(off) tf Fig. 10b - Switching Time Waveforms 5 Operation in this area limited by RDS(on) 2 ID, Drain Current (A) VDS 10 5 100 µs 2 1 1 ms 5 TC = 25 °C TJ = 150 °C Single Pulse 2 0.1 1 2 5 2 10 5 10 ms 102 2 5 103 VDS, Drain-to-Source Voltage (V) 91025_08 Fig. 8 - Maximum Safe Operating Area 3.0 ID, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 25 91025_09 50 75 100 125 150 TC, Case Temperature (°C) Fig. 9 - Maximum Drain Current vs. Case Temperature S21-0340-Rev. C, 12-Apr-2021 Document Number: 91025 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF614 www.vishay.com Vishay Siliconix Thermal Response (ZthJC) 10 0 − 0.5 1 0.2 0.1 0.1 PDM 0.05 0.02 0.01 Single Pulse (Thermal Response) t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) 91025_11 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - IAS V DD VDS A 10 V tp 0.01 Ω IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 140 ID 1.2 A 1.7 A Bottom 2.7 A Top 120 100 80 60 40 20 0 VDD = 50 V 25 91025_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current S21-0340-Rev. C, 12-Apr-2021 Document Number: 91025 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF614 www.vishay.com Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ QG 10 V 0.2 µF 12 V 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive Period P.W. D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig.14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91025. S21-0340-Rev. C, 12-Apr-2021 Document Number: 91025 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) C b e J(1) e(1) MILLIMETERS DIM. INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 04-Nov-2021 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000