IRF640PBF

IRF640, SiHF640 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.18 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. D TO-220AB G G D S Dynamic dV/dt rating Repetitive avalanche rated Available Fast switching Available Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF640PbF Lead (Pb)-free SiHF640-E3 IRF640 SnPb SiHF640 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 VGS at 10 V Continuous Drain Current Pulsed Drain TC = 25 °C TC = 100 °C Current a ID IDM Linear Derating Factor UNIT V 18 11 A 72 1.0 W/°C mJ Single Pulse Avalanche Energy b EAS 580 Repetitive Avalanche Current a IAR 18 A Repetitive Avalanche Energy a EAR 13 mJ Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) Mounting Torque d for 10 s 6-32 or M3 screw PD 125 W dV/dt 5.0 V/ns TJ, Tstg -55 to +150 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = 18 A (see fig. 12). c. ISD  18 A, dI/dt  150 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. S15-2667-Rev. C, 16-Nov-15 Document Number: 91036 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640, SiHF640 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 μA 200 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.29 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 25 VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250 μA - - 0.18  gfs VDS = 50 V, ID = 11 A b 6.7 - - S Input Capacitance Ciss - 1300 - Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 Drain-Source On-State Resistance Forward Transconductance RDS(on) ID = 11 A b VGS = 10 V Dynamic - 430 - - 130 - - - 70 - - 13 Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - - 39 Turn-On Delay Time td(on) - 14 - tr - 51 - - 45 - - 36 - - 4.5 - - 7.5 - 0.5 - 3.6 - - 18 - - 72 Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance td(off) VGS = 10 V ID = 18 A, VDS =160 V, see fig. 6 and 13 b VDD = 100 V, ID = 18 A, Rg = 9.1 , RD = 5.4, see fig. 10 b tf LD Internal Source Inductance LS Gate Input Resistance Rg Between lead, 6 mm (0.25") from package and center of die contact pF nC ns D nH G S f = 1 MHz, open drain  Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Current a Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the  integral reverse p - n junction diode D A G TJ = 25 °C, IS = 18 A, VGS = 0 V S b TJ = 25 °C, IF = 18 A, dI/dt = 100 A/μs b - - 2.0 V - 300 610 ns - 3.4 7.1 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. S15-2667-Rev. C, 16-Nov-15 Document Number: 91036 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640, SiHF640 www.vishay.com Vishay Siliconix VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V ID, Drain Current (A) Top 101 100 4.5 V 20 µs Pulse Width TC = 25 °C 100 10-1 101 VDS, Drain-to-Source Voltage (V) 91036_01 RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 ID = 18 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 TJ, Junction Temperature (°C) 91036_04 Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature 3000 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 2500 4.5 V 100 Capacitance (pF) ID, Drain Current (A) Top 101 2000 Ciss 1500 1000 Coss 500 Crss 20 µs Pulse Width TC = 150 °C 10-1 100 0 101 100 VDS, Drain-to-Source Voltage (V) 91036_02 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 25 °C 100 20 µs Pulse Width VDS = 50 V 10-1 VGS, Gate-to-Source Voltage (V) ID, Drain Current (A) 20 150 °C 101 VDS, Drain-to-Source Voltage (V) 91036_05 Fig. 2 - Typical Output Characteristics, TC = 150 °C 101 20 40 60 80 100 120 140 160 ID = 18 A VDS = 160 V 16 VDS = 100 V VDS = 40 V 12 8 4 For test circuit see figure 13 0 4 91036_03 5 6 7 8 9 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S15-2667-Rev. C, 16-Nov-15 10 0 91036_06 15 30 45 60 75 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91036 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640, SiHF640 www.vishay.com Vishay Siliconix 150 °C ID, Drain Current (A) ISD, Reverse Drain Current (A) 20 25 °C 101 16 12 8 4 100 VGS = 0 V 0.50 0.70 0.90 0 1.50 1.30 1.10 25 VSD, Source-to-Drain Voltage (V) 91036_07 VGS 102 100 µs 2 10 5 1 ms 2 10 ms 150 D.U.T. RG 10 µs 5 125 RD VDS 2 ID, Drain Current (A) 100 Fig. 9 - Maximum Drain Current vs. Case Temperature Operation in this area limited by RDS(on) 5 75 TC, Case Temperature (°C) 91036_09 Fig. 7 - Typical Source-Drain Diode Forward Voltage 103 50 + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit 1 TC = 25 °C TJ = 150 °C Single Pulse 5 2 0.1 0.1 2 5 1 2 5 10 2 VDS 5 102 2 5 90 % 103 VDS, Drain-to-Source Voltage (V) 91036_08 Fig. 8 - Maximum Safe Operating Area 10 % VGS td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0.1 0 − 0.5 0.2 0.1 0.05 0.02 0.01 PDM 10-3 10-5 91036_11 t1 Single Pulse (Thermal Response) 10-2 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S15-2667-Rev. C, 16-Nov-15 Document Number: 91036 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640, SiHF640 www.vishay.com Vishay Siliconix L Vary tp to obtain required IAS VDS QG 10 V D.U.T RG + - I AS QGS V DD QGD VG 10 V 0.01 Ω tp Charge Fig. 12a - Unclamped Inductive Test Circuit Fig. 13a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. VDS tp VDD 50 kΩ 12 V 0.2 µF 0.3 µF VDS + D.U.T. IAS - VDS VGS 3 mA Fig. 12b - Unclamped Inductive Waveforms IG ID Current sampling resistors EAS, Single Pulse Energy (mJ) 1400 ID Top 6.0 A 11.0 A Bottom 18.0 A 1200 1000 Fig. 13b - Gate Charge Test Circuit 800 600 400 200 0 VDD = 50 V 25 91036_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current S15-2667-Rev. C, 16-Nov-15 Document Number: 91036 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640, SiHF640 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel           Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91036. S15-2667-Rev. C, 16-Nov-15 Document Number: 91036 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000