IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Advanced Process Technology
VDS (V)
250 V
RDS(on) (Ω)
VGS = 10 V
• Dynamic dV/dt Rating
0.240
RoHS*
• 175 °C Operating Temperature
Qg (Max.) (nC)
54
• Fast Switching
Qgs (nC)
9.2
• Fully Avalanche Rated
Qgd (nC)
26
• Ease of Paralleling
Configuration
Available
COMPLIANT
• Simple Drive Requirements
Single
• Lead (Pb)-free Available
DESCRIPTION
I2PAK (TO-262)
TO-220
D
S
S
D
G
G
D
G
D2PAK (TO-263)
S
N-Channel MOSFET
G D
S
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on
resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
TO-220
D2PAK (TO-263)
D2PAK (TO-263)
D2PAK (TO-263)
I2PAK (TO-262)
IRF644NPbF
IRF644NSPbF
IRF644NSTRLPbFa
IRF644NSTRRPbFa
IRF644NLPbF
SiHF644N-E3
SiHF644NS-E3
SiHF644NSTL-E3a
SiHF644NSTR-E3a
SiHF644NL-E3
IRF644N
IRF644NS
IRF644NSTRLa
IRF644NSTRRa
IRF644NL
SiHF644NS
SiHF644NSTLa
SiHF644NSTRa
SiHF644NL
Lead (Pb)-free
SnPb
SiHF644N
Note
a. See device orientation.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
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1
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
250
Gate-Source Voltage
VGS
± 20
VGS at 10 V
Continuous Drain Current
TC = 25 °C
Pulsed Drain Currenta
V
14
ID
TC = 100 °C
UNIT
A
9.9
IDM
56
1.0
W/°C
Single Pulse Avalanche Energyb
EAS
180e
mJ
Avalanche Current
IAR
8.4
A
Repetitive Avalanche Energy
EAR
15
mJ
PD
150
W
dV/dt
7.9
V/ns
TJ, Tstg
- 55 to + 175
Linear Derating Factor
Maximum Power Dissipation
Peak Diode Recovery
TC = 25 °C
dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
°C
300d
for 10 s
6-32 or M3 screw
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 5.0 µH, RG = 25 Ω, IAS = 8.4 A (see fig. 12).
c. ISD ≤ 8.4 A, dI/dt ≤ 378 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. This is a calculated value limited to TJ = 175 °C.
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum
Junction-to-Ambientc
SYMBOL
TYP.
MAX.
RthJA
-
62
Case-to-Sink, Flat, Greased Surfacec
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.0
Maximum Junction-to-Ambient (PCB Mount)d
RthJA
-
40
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 µA
250
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.33
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
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2
IGSS
IDSS
RDS(on)
gfs
VGS = 20 V
-
-
± 100
VDS = 250 V, VGS = 0 V
-
-
25
VDS = 200 V, VGS = 0 V, TJ = 150 °C
-
-
250
-
-
0.240
Ω
8.8
-
-
S
VGS = 10 V
ID = 8.4 Ab
VDS = 50 V, ID = 8.4
Ab
µA
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
1060
-
-
140
-
-
38
-
-
-
54
UNIT
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
pF
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
9.2
Gate-Drain Charge
Qgd
-
-
26
Turn-On Delay Time
td(on)
-
10
-
-
21
-
-
30
-
-
17
-
-
4.5
-
-
7.5
-
-
-
14
-
-
56
-
-
1.3
-
165
250
ns
-
1.0
1.6
µC
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
ID = 8.4 A, VDS = 200 V,
see fig. 6 and 13b
VGS = 10 V
VDD = 125 V, ID = 8.4 A,
RG = 6.2 Ω, VGS = 10 V, see fig. 10b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
nC
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. This is only applied to TO-220 package.
d. When mounted on 1" square PCB (fr-4 or G-10 material).
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
102
VGS
Top
15 V
10 V
8.0 V
7.0 V
6.0
V
10
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
1
20 µs Pulse Width
TC = 25 °C
0.1
0.1
91038_01
1
10
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
102
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top
10
1
0.1
0.1
102
91038_02
4.5 V
20 µs Pulse Width
TC = 175 °C
1
102
10
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
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IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
104
TJ = 25 °C
10
103
Ciss
102
Coss
20 µs Pulse Width
VDS = 50 V
1
4
6
8
10
12
14
Crss
10
3.0
ID = 14 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
VGS, Gate-to-Source Voltage (V)
3.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature (°C)
91038_04
Fig. 4 - Normalized On-Resistance vs. Temperature
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VDS, Drain-to-Source Voltage (V)
91038_05
Fig. 3 - Typical Transfer Characteristics
102
10
1
16
VGS, Gate-to-Source Voltage (V)
91038_03
RDS(on), Drain-to-Source On Resistance
(Normalized)
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
TJ = 175 °C
C, Capacitance (pF)
ID, Drain-to-Source Current (A)
102
ID = 8.4 A
VDS = 200 V
16
VDS = 125 V
VDS = 50 V
12
8
4
0
0
91038_06
12
24
36
48
60
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
15
TJ = 175 °C
10
TJ = 25 °C
1
12
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
102
9
6
3
0.1
0.0
VGS = 0 V
0
0.4
0.8
1.6
1.2
VSD, Source-to-Drain Voltage (V)
91038_07
25
50
VGS
150
175
RD
D.U.T.
RG
103
ID, Drain-to-Source Current (A)
125
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
+
- VDD
Operation in this area limited
by RDS(on)
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
102
Fig. 10a - Switching Time Test Circuit
10
100 µs
VDS
1 ms
1
90 %
TC = 25 °C
TJ = 175 °C
Single Pulse
0.1
1
91038_08
100
TC, Case Temperature (°C)
91038_09
Fig. 7 - Typical Source-Drain Diode Forward Voltage
75
10
10 ms
102
VDS, Drain-to-Source Voltage (V)
103
10 %
VGS
td(on)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
tr
td(off) tf
Fig. 10b - Switching Time Waveforms
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IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Thermal Response (ZthJC)
10
1
D = 0.5
PDM
0.2
0.1
0.05
0.02
0.01
0.1
t1
t2
Single Pulse
(Thermal Response)
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
10-4
10-3
10-2
0.1
1
t1, Rectangular Pulse Duration (s)
91038_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
Driver
L
VDS
D.U.T
RG
+
A
- VDD
IAS
20 V
tp
IAS
0.01 Ω
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Avalanche Energy (mJ)
Fig. 12a - Unclamped Inductive Test Circuit
300
ID
3.4 A
5.9 A
Bottom 8.4 A
Top
240
180
120
91038_12c
60
0
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
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Document Number: 91038
S-83000-Rev. A, 19-Jan-09
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
0.2 µF
12 V
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Fig. 13a - Basic Gate Charge Waveform
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
+
RG
+
• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices and 3 V drive devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91038.
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
www.vishay.com
7
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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