IRF644
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
D
• Dynamic dV/dt rating
TO-220AB
Available
• Repetitive avalanche rated
• Fast switching
G
Available
• Ease of paralleling
• Simple drive requirements
G
D
S
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V)
250
RDS(on) (Ω)
VGS = 10 V
Qg max. (nC)
DESCRIPTION
0.28
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
68
Qgs (nC)
11
Qgd (nC)
35
Configuration
Single
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
IRF644PbF
Lead (Pb)-free and halogen-free
IRF644PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
250
Gate-source voltage
VGS
± 20
VGS at 10 V
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current a
ID
UNIT
V
14
8.5
A
IDM
56
1.0
W/°C
Single pulse avalanche energy b
EAS
550
mJ
Repetitive avalanche current a
IAR
14
A
EAR
13
mJ
PD
125
W
dV/dt
4.8
V/ns
TJ, Tstg
-55 to +150
Linear derating factor
Repetitive avalanche energy
a
Maximum power dissipation
TC = 25 °C
Peak diode recovery dV/dt c
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
Mounting torque
For 10 s
6-32 or M3 screw
300
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 4.5 mH, Rg = 25 Ω, IAS = 14 A (see fig. 12)
c. ISD ≤ 14 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
S21-0853-Rev. E, 16-Aug-2021
Document Number: 91039
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF644
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Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum junction-to-ambient
RthJA
-
62
Case-to-sink, flat, greased surface
RthCS
0.50
-
Maximum junction-to-case (drain)
RthJC
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage
VDS
VGS = 0 V, ID = 250 μA
250
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.34
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-source leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
VDS = 250 V, VGS = 0 V
-
-
25
VDS = 200 V, VGS = 0 V, TJ = 125 °C
-
-
250
-
-
0.28
Ω
6.7
-
-
S
-
Drain-source on-state resistance
Forward transconductance
RDS(on)
ID = 8.4 A b
VGS = 10 V
Ab
gfs
VDS = 50 V, ID = 8.4
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
μA
Dynamic
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
tr
td(off)
ID = 7.9 A, VDS = 200 V,
see fig. 6 and 13 b
VDD = 125 V, ID = 7.9 A,
Rg = 9.1 Ω, RD = 8.7 Ω, see fig. 10b
tf
Gate input resistance
LD
Internal drain inductance
LS
Internal source inductance
VGS = 10 V
Rg
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
1300
-
330
-
-
85
-
-
-
68
-
-
11
-
-
35
-
11
-
-
24
-
-
53
-
-
49
-
-
4.5
-
-
7.5
-
0.3
-
1.2
-
-
14
-
-
56
pF
nC
ns
nH
G
S
f = 1 MHz, open drain
Ω
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulsed diode forward current a
Body diode voltage
IS
ISM
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Forward turn-on time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 14 A, VGS = 0
S
Vb
TJ = 25 °C, IF = 7.9 A, dI/dt = 100 A/μs b
-
-
1.8
V
-
250
500
ns
-
2.3
4.6
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
S21-0853-Rev. E, 16-Aug-2021
Document Number: 91039
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF644
www.vishay.com
Vishay Siliconix
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
ID, Drain Current (A)
Top
101
100
4.5 V
20 µs Pulse Width
TC = 25 °C
10-1
100
101
VDS, Drain-to-Source Voltage (V)
91039_01
RDS(on), Drain-to-Source On Resistance
(Normalized)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
ID = 7.9 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
TJ, Junction Temperature (°C)
91039_04
Fig. 1 - Typical Output Characteristics, TC = 25 °C
20 40 60 80 100 120 140 160
Fig. 4 - Normalized On-Resistance vs. Temperature
3000
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
101
2400
Capacitance (pF)
ID, Drain Current (A)
Top
4.5 V
100
1800
Ciss
1200
Coss
600
20 µs Pulse Width
TC = 150 °C
100
10-1
0
101
100
VDS, Drain-to-Source Voltage (V)
91039_02
Crss
VDS, Drain-to-Source Voltage (V)
91039_05
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
150 °C
25 °C
100
20 µs Pulse Width
VDS = 50 V
10-1
4
91039_03
5
6
7
8
9
Fig. 3 - Typical Transfer Characteristics
ID = 7.9 A
VDS = 200 V
16
VDS = 125 V
VDS = 50 V
12
8
4
For test circuit
see figure 13
0
10
VGS, Gate-to-Source Voltage (V)
S21-0853-Rev. E, 16-Aug-2021
VGS, Gate-to-Source Voltage (V)
ID, Drain Current (A)
20
101
101
0
91039_06
10
20
30
40
50
60
70
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91039
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF644
www.vishay.com
Vishay Siliconix
14
ISD, Reverse Drain Current (A)
150 °C
12
ID, Drain Current (A)
101
25 °C
100
10
8
6
4
2
VGS = 0 V
10-1
0.5
0
0.6
0.7
0.9
0.8
1.1
1.0
25
VSD, Source-to-Drain Voltage (V)
91039_07
125
VGS
D.U.T.
RG
+
- VDD
102
5
10 µs
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
2
100 µs
10
5
Fig. 10a - Switching Time Test Circuit
1 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
2
1
2
1
5
10
2
5
VDS
10 ms
102
2
5
150
RD
VDS
2
ID, Drain Current (A)
100
Fig. 9 - Maximum Drain Current vs. Case Temperature
Operation in this area limited
by RDS(on)
5
75
TC, Case Temperature (°C)
91039_09
Fig. 7 - Typical Source-Drain Diode Forward Voltage
103
50
90 %
103
VDS, Drain-to-Source Voltage (V)
91039_08
Fig. 8 - Maximum Safe Operating Area
10 %
VGS
td(on)
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
1
0 − 0.5
PDM
0.2
0.1
0.1
t1
0.05
t2
0.02
0.01
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
10-2
10-5
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
91039_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S21-0853-Rev. E, 16-Aug-2021
Document Number: 91039
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF644
www.vishay.com
Vishay Siliconix
VDS
L
Vary tp to obtain
required IAS
VDS
tp
VDD
D.U.T
RG
+
-
I AS
VDS
V DD
10 V
IAS
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Energy (mJ)
1200
ID
6.3 A
8.9 A
Bottom 14 A
Top
1000
800
600
400
200
0
VDD = 50 V
25
91039_12c
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
S21-0853-Rev. E, 16-Aug-2021
Fig. 13b - Gate Charge Test Circuit
Document Number: 91039
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF644
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
3
+
2
4
-
-
+
1
Rg
•
•
•
•
1 Driver gate drive
Period
P.W.
+
V
- DD
dv/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
D=
P.W.
Period
V GS = 10 V a
2
D.U.T. ISD waveform
Reverse
recovery
current
3 D.U.T. VDS
Body diode forward
current
di/dt
waveform
Diode recovery
dv/dt
Re-applied
voltage
V DD
Body diode forward drop
4 Inductor current
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91039.
S21-0853-Rev. E, 16-Aug-2021
Document Number: 91039
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
C
b
e
J(1)
e(1)
MILLIMETERS
DIM.
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
J(1)
2.41
2.92
0.095
0.115
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
Document Number: 66542
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 04-Nov-2021
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2022
1
Document Number: 91000
