IRF730PBF-BE3

IRF730 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D • Dynamic dV/dt rating TO-220AB Available • Repetitive avalanche rated • Fast switching G Available • Ease of paralleling • Simple drive requirements G D S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details N-Channel MOSFET PRODUCT SUMMARY VDS (V) 400 RDS(on) (Ω) VGS = 10 V Qg max. (nC) 38 Qgs (nC) 5.7 Qgd (nC) DESCRIPTION 1.0 Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 22 Configuration Single The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF730PbF Lead (Pb)-free and halogen-free IRF730PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 400 Gate-source voltage VGS ± 20 VGS at 10 V Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current a ID IDM Linear derating factor UNIT V 5.5 3.5 A 22 0.59 W/°C Single pulse avalanche energy b EAS 290 mJ Repetitive avalanche current a IAR 5.5 A Repetitive avalanche energy a EAR 7.4 mJ PD 74 W dV/dt 4.0 V/ns TJ, Tstg -55 to +150 Maximum power dissipation Peak diode recovery dV/dt TC = 25 °C c Operating junction and storage temperature range Soldering recommendations (peak temperature) d Mounting torque For 10 s 6-32 or M3 screw 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 Ω, IAS = 5.5 A (see fig. 12) c. ISD ≤ 5.5 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S21-0853-Rev. D, 16-Aug-2021 Document Number: 91047 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF730 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - Maximum junction-to-case (drain) RthJC - 1.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage VDS VGS = 0 V, ID = 250 μA 400 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.54 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS VDS = 400 V, VGS = 0 V - - 25 VDS = 320 V, VGS = 0 V, TJ = 125 °C - - 250 μA - - 1.0 Ω gfs VDS = 50 V, ID = 3.3 A b 2.9 - - S Input capacitance Ciss - 700 - Output capacitance Coss Reverse transfer capacitance Crss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 Drain-source on-state resistance Forward transconductance RDS(on) ID = 3.3 A b VGS = 10 V Dynamic - 170 - - 64 - - - 38 - - 5.7 pF Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd - - 22 Turn-on delay time td(on) - 10 - tr VDD = 200 V, ID = 3.5 A Rg = 12 Ω, RD = 57 Ω, see fig. 10 b - 15 - - 38 - - 14 - f = 1 MHz, open drain 0.6 - 2.3 - 4.5 - - 7.5 - - - 5.5 S - - 22 TJ = 25 °C, IS = 5.5 A, VGS = 0 V b - - 1.6 V - 270 530 ns - 1.8 2.2 μC Rise time Turn-off delay time td(off) Fall time tf Gate input resistance Rg Internal drain inductance LD Internal source inductance LS VGS = 10 V ID = 3.5 A, VDS = 320 V, see fig. 6 and 13 b Between lead, 6 mm (0.25") from package and center of die contact D nC ns Ω nH G S Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Forward turn-on time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IF = 3.5 A, dI/dt = 100 A/μs b Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0853-Rev. D, 16-Aug-2021 Document Number: 91047 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF730 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) ID, Drain Current (A) 101 100 4.5 V 20 µs Pulse Width TC = 25 °C 10-1 10-1 100 101 VDS, Drain-to-Source Voltage (V) 91047_01 3.0 RDS(on), Drain-to-Source On Resistance (Normalized) VGS Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V ID = 3.5 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) 91047_04 Fig. 1 - Typical Output Characteristics, TC = 25 °C 0 Fig. 4 - Normalized On-Resistance vs. Temperature 1500 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 100 1200 4.5 V Capacitance (pF) ID, Drain Current (A) 101 Top 900 Ciss 600 Coss 300 20 µs Pulse Width TC = 150 °C 10-1 10-1 100 VDS, Drain-to-Source Voltage (V) 91047_02 Crss 0 100 101 VDS, Drain-to-Source Voltage (V) 91047_05 Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage ID, Drain Current (A) 150 °C 100 25 °C 10-1 20 µs Pulse Width VDS = 50 V 4 91047_03 5 6 7 8 9 Fig. 3 - Typical Transfer Characteristics ID = 3.5 A 16 VDD = 320 V VDD = 200 V 12 VDD = 80 V 8 4 For test circuit see figure 13 0 10 VGS, Gate-to-Source Voltage (V) S21-0853-Rev. D, 16-Aug-2021 VGS, Gate-to-Source Voltage (V) 20 101 101 0 91047_06 10 20 30 40 50 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91047 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF730 www.vishay.com Vishay Siliconix ISD, Reverse Drain Current (A) 6.0 101 ID, Drain Current (A) 5.0 150 °C 25 °C 4.0 3.0 2.0 1.0 VGS = 0 V 100 0.6 0.7 0.8 0.9 1.0 1.1 0.0 1.2 25 VSD, Source-to-Drain Voltage (V) 91047_07 50 Operation in this area limited by RDS(on) 2 VGS D.U.T. RG 10 µs + - VDD 10 100 µs 5 2 150 RD VDS 5 125 Fig. 9 - Maximum Drain Current vs. Case Temperature 102 ID, Drain Current (A) 100 TC, Case Temperature (°C) 91047_09 Fig. 7 - Typical Source-Drain Diode Forward Voltage 75 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1 ms 1 5 2 0.1 0.1 10 ms Fig. 10a - Switching Time Test Circuit 5 90 % TC = 25 °C TJ = 150 °C Single Pulse 2 5 1 2 5 10 2 5 102 VDS 2 103 2 5 104 VDS, Drain-to-Source Voltage (V) 91047_08 Fig. 8 - Maximum Safe Operating Area 10 % VGS td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0 − 0.5 0.2 0.1 PDM 0.1 0.05 t1 Single Pulse (Thermal Response) 0.02 0.01 10-2 10-5 10-4 10-3 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 0.1 1 10 t1, Rectangular Pulse Duration (S) 91047_11 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S21-0853-Rev. D, 16-Aug-2021 Document Number: 91047 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF730 www.vishay.com Vishay Siliconix L Vary tp to obtain required IAS Current regulator Same type as D.U.T. VDS 50 kΩ D.U.T RG + - I AS V DD 12 V 0.2 µF 0.3 µF + D.U.T. 10 V - VDS 0.01 Ω tp VGS Fig. 12a - Unclamped Inductive Test Circuit 3 mA IG ID Current sampling resistors VDS tp VDD Fig. 13b - Gate Charge Test Circuit VDS IAS Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 700 ID 2.5 A 3.5 A Bottom 5.5 A Top 600 500 400 300 200 100 0 VDD = 50 V 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) 91047_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current QG 10 V QGS QGD VG Charge Fig. 13a - Basic Gate Charge Waveform S21-0853-Rev. D, 16-Aug-2021 Document Number: 91047 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF730 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • • • • dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91047. S21-0853-Rev. D, 16-Aug-2021 Document Number: 91047 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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