IRF9510
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
S
•
•
•
•
•
•
•
•
TO-220AB
G
G
D
S
D
P-Channel MOSFET
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
VDS (V)
-100
RDS(on) (Ω)
VGS = -10 V
8.7
Qgs (nC)
2.2
Qgd (nC)
4.1
Configuration
DESCRIPTION
1.2
Qg max. (nC)
Dynamic dV/dt rating
Available
Repetitive avalanche rated
P-channel
Available
175 °C operating temperature
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Single
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
IRF9510PbF
Lead (Pb)-free and halogen-free
IRF9510PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-100
Gate-source voltage
VGS
± 20
VGS at 10 V
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current a
ID
IDM
Linear derating factor
UNIT
V
-4.0
-2.8
A
-16
0.29
W/°C
Single pulse avalanche energy b
EAS
200
mJ
Repetitive avalanche current a
IAR
-4.0
A
Repetitive avalanche energy a
EAR
4.3
mJ
PD
43
W
dV/dt
-5.5
V/ns
TJ, Tstg
-55 to +175
Maximum power dissipation
Peak diode recovery dV/dt
TC = 25 °C
c
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
Mounting torque
For 10 s
6-32 or M3 screw
300
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = -25 V, starting TJ = 25 °C, L = 18 mH, Rg = 25 Ω, IAS = -4.0 A (see fig. 12)
c. ISD ≤ -4.0 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
d. 1.6 mm from case
S21-0852-Rev. C, 16-Aug-2021
Document Number: 91072
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum junction-to-ambient
RthJA
-
62
Case-to-sink, flat, greased surface
RthCS
0.50
-
Maximum junction-to-case (drain)
RthJC
-
3.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage
VDS
VGS = 0 V, ID = -250 μA
-100
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = -1 mA
-
- 0.091
-
V/°C
VGS(th)
VDS = VGS, ID = -250 μA
-2.0
-
-4.0
V
Gate-source leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
VDS = -100 V, VGS = 0 V
-
-
-100
VDS = -80 V, VGS = 0 V, TJ = 150 °C
-
-
-500
μA
-
-
1.2
Ω
gfs
VDS = -50 V, ID = -2.4 A b
1.0
-
-
S
Input capacitance
Ciss
-
200
-
Output capacitance
Coss
Reverse transfer capacitance
Crss
VGS = 0 V,
VDS = -25 V,
f = 1.0 MHz, see fig. 5
Drain-source on-state resistance
Forward transconductance
RDS(on)
ID = -2.4 A b
VGS = -10 V
Dynamic
-
94
-
-
18
-
-
-
8.7
-
-
2.2
pF
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
-
-
4.1
Turn-on delay time
td(on)
-
10
-
tr
VDD = -50 V, ID = -4.0 A,
Rg = 24 Ω, RD = 11 Ω, see fig. 10 b
-
27
-
-
15
-
-
17
-
f = 1 MHz, open drain
1.5
-
7.9
-
4.5
-
-
7.5
-
-
-
-4.0
-
-
-16
-
-
-5.5
V
-
82
160
ns
-
0.15
0.30
μC
Rise time
Turn-off delay time
Fall time
Gate input resistance
td(off)
VGS = -10 V
ID = -4.0 A, VDS = -80 V,
see fig. 6 and 13 b
tf
Rg
Internal drain inductance
LD
Internal source inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
nC
ns
Ω
nH
G
S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulsed diode forward current a
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Forward turn-on time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = -4.0 A, VGS = 0 V b
TJ = 25 °C, IF = -4.0 A, dI/dt = 100 A/μsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
S21-0852-Rev. C, 16-Aug-2021
Document Number: 91072
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510
www.vishay.com
Vishay Siliconix
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
Top
- ID, Drain Current (A)
101
100
- 4.5 V
20 µs Pulse Width
TC = 25 °C
100
101
- VDS, Drain-to-Source Voltage (V)
91072_01
RDS(on), Drain-to-Source On Resistance
(Normalized)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
ID = - 4.0 A
VGS = - 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60- 40 - 20 0
91072_04
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 1 - Typical Output Characteristics, TC = 25 °C
350
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
280
Capacitance (pF)
- ID, Drain Current (A)
101 Top
100
- 4.5 V
20 40 60 80 100 120 140 160 180
TJ, Junction Temperature (°C)
Ciss
210
140
Coss
70
Crss
20 µs Pulse Width
TC = 175 °C
100
100
- VDS, Drain-to-Source Voltage (V)
91072_02
0
101
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 2 - Typical Output Characteristics, TC = 175 °C
- ID, Drain Current (A)
175 °C
100
20 µs Pulse Width
VDS = - 50 V
4
5
6
7
8
9
Fig. 3 - Typical Transfer Characteristics
ID = - 4.0 A
VDS = - 80 V
VDS = - 50 V
16
VDS = - 20 V
12
8
4
For test circuit
see figure 13
0
10
- VGS, Gate-to-Source Voltage (V)
S21-0852-Rev. C, 16-Aug-2021
- VGS, Gate-to-Source Voltage (V)
20
25 °C
91072_03
- VDS, Drain-to-Source Voltage (V)
91072_05
101
101
0
91072_06
2
4
6
8
10
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91072
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510
www.vishay.com
Vishay Siliconix
- ISD, Reverse Drain Current (A)
4.0
175 °C
- ID, Drain Current (A)
101
25 °C
100
VGS = 0 V
10-1
1.0
2.0
3.0
1.0
25
- VSD, Source-to-Drain Voltage (V)
91072_07
2.0
0.0
5.0
4.0
3.0
50
125
150
175
Fig. 9 - Maximum Drain Current vs. Case Temperature
RD
102
VDS
Operation in this area limited
by RDS(on)
5
VGS
2
- ID, Drain Current (A)
100
TC, Case Temperature (°C)
91072_09
Fig. 7 - Typical Source-Drain Diode Forward Voltage
75
10
D.U.T.
RG
100 µs
+VDD
5
1 ms
2
1
- 10 V
10 ms
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
5
2
0.1
Fig. 10a - Switching Time Test Circuit
5
TC = 25 °C
TJ = 175 °C
Single Pulse
2
10-2
0.1
2
5
1
2
5
10
td(on)
2
5
102
2
5
td(off) tf
tr
VGS
103
10 %
- VDS, Drain-to-Source Voltage (V)
91072_08
Fig. 8 - Maximum Safe Operating Area
90 %
VDS
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
D = 0.5
1
0.2
0.1
0.1
PDM
0.05
0.02
0.01
Single Pulse
(Thermal Response)
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
91072_11
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S21-0852-Rev. C, 16-Aug-2021
Document Number: 91072
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510
www.vishay.com
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
D.U.T
RG
+ V DD
QG
- 10 V
QGS
IAS
QGD
- 10 V
0.01 Ω
tp
VG
Fig. 12a - Unclamped Inductive Test Circuit
Charge
IAS
Fig. 13a - Basic Gate Charge Waveform
VDS
Current regulator
Same type as D.U.T.
VDD
50 kΩ
tp
12 V
0.2 µF
0.3 µF
VDS
-
D.U.T.
Fig. 12b - Unclamped Inductive Waveforms
+ VDS
VGS
EAS, Single Pulse Energy (mJ)
700
ID
Top
- 1.6 A
- 2.8 A
Bottom - 4.0 A
600
500
- 3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
400
300
200
100
0
VDD = - 25 V
25
91072_12c
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig. 12 c- Maximum Avalanche Energy vs. Drain Current
S21-0852-Rev. C, 16-Aug-2021
Document Number: 91072
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
+
-
-
Rg
• dV/dt controlled by Rg
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91072.
S21-0852-Rev. C, 16-Aug-2021
Document Number: 91072
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
C
b
e
J(1)
e(1)
MILLIMETERS
DIM.
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
J(1)
2.41
2.92
0.095
0.115
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
Document Number: 66542
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 04-Nov-2021
Legal Disclaimer Notice
www.vishay.com
Vishay
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Revision: 09-Jul-2021
1
Document Number: 91000