IRF9520PBF-BE3

IRF9520 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S • • • • • • • • TO-220AB G G D S D P-Channel MOSFET Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY VDS (V) -100 RDS(on) (Ω) VGS = -10 V Qg max. (nC) 0.60 DESCRIPTION 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Dynamic dv/dt rating Available Repetitive avalanche rated P-channel Available 175 °C operating temperature Fast switching Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Single ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF9520PbF Lead (Pb)-free and halogen-free IRF9520PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -100 Gate-source voltage VGS ± 20 VGS at 10 V Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current a ID IDM Linear derating factor UNIT V -6.8 -4.8 A -27 0.40 W/°C Single pulse avalanche energy b EAS 300 mJ Repetitive avalanche current a IAR -6.8 A EAR 6.0 mJ PD 60 W dv/dt -5.5 V/ns TJ, Tstg -55 to +175 Repetitive avalanche energy a Maximum power dissipation TC = 25 °C Peak diode recovery dV/dt c Operating junction and storage temperature range Soldering recommendations (peak temperature) d Mounting torque For 10 s 6-32 or M3 screw 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = -25 V, starting TJ = 25 °C, L = 9.7 mH, Rg = 25 Ω, IAS = -6.8 A (see fig. 12) c. ISD ≤ -6.8 A, di/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case S21-0852-Rev. C, 16-Aug-2021 Document Number: 91074 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9520 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - Maximum junction-to-case (drain) RthJC - 2.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage VDS VGS = 0 V, ID = -250 μA -100 - - V ΔVDS/TJ Reference to 25 °C, ID = -1 mA - -0.10 - V/°C VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS VDS = -100 V, VGS = 0 V - - -100 VDS = -80 V, VGS = 0 V, TJ = 150 °C - - -500 Drain-source on-state resistance Forward transconductance μA - - 0.60 Ω gfs VDS = -50 V, ID = -4.1 A b 2.0 - - S VGS = 0 V, VDS = -25 V, f = 1.0 MHz, see fig. 5 - 390 - - 170 - - 45 - - - 18 - - 3.0 - - 9.0 RDS(on) ID = -4.1 A b VGS = -10 V Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time tf Gate input resistance Rg Internal drain inductance LD Internal source inductance LS VGS = -10 V ID = -6.8 A, VDS = -80 V, see fig. 6 and 13 b - 9.6 - VDD = -50 V, ID = -6.8 A, Rg = 18 Ω, RD = 7.1 Ω, see fig. 10 b - 29 - - 21 - - 25 - f = 1 MHz, open drain 0.8 - 3.9 - 4.5 - Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns Ω nH G - 7.5 - - - -6.8 - - -27 - - -6.3 V - 98 200 ns - 0.33 0.66 μC S Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Forward turn-on time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = -6.8 A, VGS = 0 V b TJ = 25 °C, IF = -6.8 A, dI/dt = 100 A/μs b Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0852-Rev. C, 16-Aug-2021 Document Number: 91074 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9520 www.vishay.com Vishay Siliconix 101 VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V Top 100 100 - 4.5 V 20 µs Pulse Width TC = 25 °C 101 - VDS, Drain-to-Source Voltage (V) 91074_01 RDS(on), Drain-to-Source On Resistance (Normalized) - ID, Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 ID = - 6.8 A VGS = - 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60- 40 - 20 0 TJ, Junction Temperature (°C) 91074_04 Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature 900 VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 750 Capacitance (pF) - ID, Drain Current (A) Top 101 - 4.5 V 600 100 20 µs Pulse Width TC = 175 °C 100 450 Ciss 300 Coss 150 Crss 0 101 100 - VDS, Drain-to-Source Voltage (V) 91074_02 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage - ID, Drain Current (A) 101 175 °C 20 µs Pulse Width VDS = - 50 V ID = - 6.8 A VDS = - 80 V 16 VDS = - 50 V VDS = - 20 V 12 8 4 For test circuit see figure 13 0 4 91074_03 - VGS, Gate-to-Source Voltage (V) 20 25 °C 101 - VDS, Drain-to-Source Voltage (V) 91074_05 Fig. 2 - Typical Output Characteristics, TC = 175 °C 100 20 40 60 80 100 120 140 160 180 5 6 7 8 9 10 - VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S21-0852-Rev. C, 16-Aug-2021 0 91074_06 4 8 12 16 20 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91074 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9520 www.vishay.com Vishay Siliconix 6.0 101 175 °C 100 - ID, Drain Current (A) - ISD, Reverse Drain Current (A) 7.0 25 °C 5.0 4.0 3.0 2.0 1.0 VGS = 0 V 10-1 1.0 2.0 3.0 0.0 5.0 4.0 50 25 - VSD, Source-to-Drain Voltage (V) 91074_07 100 150 175 Fig. 9 - Maximum Drain Current vs. Case Temperature RD 103 Operation in this area limited by RDS(on) 5 VDS VGS - ID, Drain Current (A) 125 TC, Case Temperature (°C) 91074_09 Fig. 7 - Typical Source-Drain Diode Forward Voltage 75 D.U.T. 2 RG +VDD 102 5 - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 2 100 µs 10 5 1 ms TC = 25 °C TJ = 175 °C Single Pulse 2 1 1 2 5 10 2 Fig. 10a - Switching Time Test Circuit 10 ms 5 102 2 td(on) 5 10 % - VDS, Drain-to-Source Voltage (V) 91074_08 td(off) tf tr VGS 103 Fig. 8 - Maximum Safe Operating Area 90 % VDS Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.5 0.2 PDM 0.1 0.05 0.1 t1 0.02 0.01 t2 Single Pulse (Thermal Response) 10-2 10-5 10-4 10-3 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) 91074_11 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S21-0852-Rev. C, 16-Aug-2021 Document Number: 91074 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9520 www.vishay.com Vishay Siliconix L Vary tp to obtain required IAS VDS QG - 10 V D.U.T RG QGS + V DD IAS QGD VG - 10 V 0.01 Ω tp Charge Fig. 12a - Unclamped Inductive Test Circuit Fig. 13a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. IAS 50 kΩ VDS 12 V 0.2 µF 0.3 µF - VDD D.U.T. tp + VDS VGS VDS - 3 mA Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 1000 ID Top - 2.8 A - 4.8 A Bottom - 6.8 A 800 IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit 600 400 200 0 VDD = - 25 V 25 91074_12c 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current S21-0852-Rev. C, 16-Aug-2021 Document Number: 91074 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9520 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test + - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91074. S21-0852-Rev. C, 16-Aug-2021 Document Number: 91074 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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