IRF9610S, SiHF9610S
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
•
- 200
RDS(on) ()
VGS = - 10 V
3
Qg (Max.) (nC)
11
Qgs (nC)
7
Qgd (nC)
4
Configuration
Single
Surface Mount
Available in Tape and Reel
Dynamic dV/dt Rating
P-Channel
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
S
D2PAK (TO-263)
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2 W in a typical surface
mount application.
G
G D
D
S
P-Channel MOSFET
ORDERING INFORMATION
D2PAK (TO-263)
Package
SiHF9610S-GE3
Lead (Pb)-free and Halogen-free
SiHF9610STRR-GE3
SiHF9610STRL-GE3
IRF9610SPbF
SiHF9610S-E3
Lead (Pb)-free
IRF9610STRRPbF
IRF9610STRLPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 200
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
IDM
-1
0.16
0.025
TC = 25 °C
TA = 25 °C
Peak Diode Recovery dV/dtb
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
PD
A
-7
Linear Derating Factor (PCB Mount)d
Maximum Power Dissipation (PCB Mount)d
V
- 1.8
Linear Derating Factor
Maximum Power Dissipation
UNIT
20
3
dV/dt
-5
TJ, Tstg
- 55 to + 150
300c
W/°C
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. ISD - 1.8 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.
c. 1.6 mm from case.
d. When mounted on 1" square PCB (FR-4 or G-10 material).
S12-1558-Rev. D, 02-Jul-12
Document Number: 91081
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9610S, SiHF9610S
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
PARAMETER
RthJA
-
62
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
6.4
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0, ID = - 250 μA
- 200
-
-
V
VDS/TJ
Reference to 25 °C, ID = - 1 mA
-
- 0.23
-
V/°C
VGS(th)
VDS = VGS, ID = - 250 μA
-2
-
-4
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 200 V, VGS = 0 V
-
-
- 100
VDS = - 160 V, VGS = 0 V, TJ = 125 °C
-
-
- 500
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
μA
-
-
3
VDS = - 50 V, ID = - 0.90 Ab
0.90
-
-
S
VGS = 0 V,
VDS = - 25 V,
f = 1 MHz, see fig. 10
-
170
-
-
50
-
-
15
-
-
-
11
ID = - 0.90 Ab
VGS = - 10 V
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
7
Gate-Drain Charge
Qgd
-
-
4
Turn-On Delay Time
td(on)
-
8
-
tr
-
15
-
-
1
-
-
8
-
-
4.5
-
-
7.5
-
-
-
- 1.8
-
-
-7
-
-
- 5.8
-
240
360
ns
-
1.7
2.6
μC
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
VGS = - 10 V
ID = - 3.5 A, VDS = - 160 V,
see fig. 11 and 18b
VDD = - 100 V, ID = - 0.90 A,
RG = 50 , RD = 110 , see fig. 17b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
pF
nC
ns
D
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = - 1.8 A, VGS = 0 Vb
TJ = 25 °C, IF = - 1.8 A, dI/dt = 100 A/μsb
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Pulse width 300 μs; duty cycle 2 %.
S12-1558-Rev. D, 02-Jul-12
Document Number: 91081
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9610S, SiHF9610S
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
- 2.40
- 2.40
-7V
VGS = - 10, - 9, - 8 V
VGS = - 10, - 9, - 8, - 7 V
- 1.92
- 1.44
ID, Drain Current (A)
ID, Drain Current (A)
- 1.92
-6V
- 0.96
-5V
- 0.48
- 1.44
- 0.96
-5V
- 0.48
80 µs Pulse Test
80 µs Pulse Test
-4V
-4V
0.00
0.00
- 10
0
- 30
- 20
- 40
- 50
-2
0
VDS, Drain-to-Source Voltage (V)
91081_01
102
TJ = 25 °C
TJ = 125 °C
- 0.96
- 0.48
80 µs Pulse Test
VDS > ID(on) x RDS(on) max.
0.00
-2
0
-4
-6
-8
2
5
100 µs
2
1 ms
1
5
10 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
2
0.1
1
2
5
2
10
5
2
102
5
103
Negative VDS, Drain-to-Source Voltage (V)
91081_04
Fig. 2 - Typical Transfer Characteristics
ZthJC(t)/RthJC, Normalized Effective Transie
Thermal Impedence (Per Unit)
- 10
10
- 10
VGS, Gate-to-Source Voltage (V)
91081_02
-8
Operation in this area limited
by RDS(on)
5
Negative ID, Drain Current (A)
TJ = - 55 °C
- 1.44
-6
Fig. 3 - Typical Saturation Characteristics
- 2.40
- 1.92
-4
VDS, Drain-to-Source Voltage (V)
91081_03
Fig. 1 - Typical Output Characteristics
ID, Drain Current (A)
-6V
Fig. 4 - Maximum Safe Operating Area
2.0
1.0
0.5
D = 0.5
0.2
0.2
0.1
0.1
0.05
0.02
PDM
t1
t2
0.05
0.02
0.01
0.01
10-5
Notes:
1. Duty Factor, D = t1/t2
2. Per Unit Base = RthJC = 6.4 °C/W
3. TJM - TC = PDM ZthJC(t)
Single Pulse (Transient
Thermal Impedence)
2
5
10-4
2
5
10-3
2
5
10-2
2
5
0.1
2
5
1.0
2
5
10
t1, Square Wave Pulse Duration (s)
91081_05
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to.Case vs. Pulse Duration
S12-1558-Rev. D, 02-Jul-12
Document Number: 91081
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9610S, SiHF9610S
www.vishay.com
2.0
gfs,Transconductance (S)
80 µs Pulse Test
VDS > ID(on) x RDS(on) max.
1.6
TJ = - 55 °C
1.2
TJ = 25 °C
TJ = 125 °C
0.8
0.4
0.0
0
- 0.48
- 0.96
- 1.44
- 1.92
2.5
ID = - 0.6 A
VGS = - 10 V
2.0
1.5
1.0
0.5
0.0
- 40
- 2.40
ID, Drain Current (A)
91081_06
RDS(on), Drain-to-Source On Resistance
(Normalized)
Vishay Siliconix
91081_09
Fig. 6 - Typical Transconductance vs. Drain Current
0
40
500
C, Capacitance (pF)
ID, Drain Current (A)
- 1.0
TJ = 150 °C
TJ = 25 °C
- 0.5
160
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
C ,C
Coss = Cds + gs gd
Cgs + Cgd
400
- 2.0
120
Fig. 9 - Normalized On-Resistance vs. Temperature
- 10.0
- 5.0
80
TJ, Junction Temperature (°C)
≈ Cgs + Cgd
300
Ciss
200
Coss
100
Crss
- 0.2
0
- 0.1
- 2.0
- 10
0
- 3.2
- 4.4
- 5.6
- 6.8
- 8.0
- 30
- 40
- 50
VSD, Source-to-Drain Voltage (V)
91081_07
1.25
1.15
1.05
0.95
0.85
0.75
- 40
91081_08
Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage
Negative VGS, Gate-to-Source Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
BVDSS, Drain-to-Source Breakdown
Voltage (Normalized)
- 20
VDS, Drain-to-Source Voltage (V)
91081_10
0
40
80
120
TJ, Junction Temperature (°C)
Fig. 8 - Breakdown Voltage vs. Temperature
S12-1558-Rev. D, 02-Jul-12
160
91081_11
20
ID = - 1.8 A
VDS = - 100 V
16
VDS = - 60 V
VDS = - 40 V
12
8
4
For test circuit
see figure 18
0
0
2
4
6
8
QG, Total Gate Charge (nC)
Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91081
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9610S, SiHF9610S
www.vishay.com
7
20
5
PD, Power Dissipation (W)
RDS(on) measured with current pulse of
2.0 µs duration. Initial TJ = 25 °C.
(Heating effect of 2.0 µs pulse is minimal.)
6
RDS(on), Drain-to-Source
On Resistance (Ω)
Vishay Siliconix
VGS = - 10 V
4
3
VGS = - 20 V
2
1
15
10
5
0
0
0
-1
-2
-3
-4
-5
-6
ID, Drain Current (A)
91081_12
0
-7
20
Fig. 12 - Typical On-Resistance vs. Drain Current
40
60
80
100
120
140
TC, Case Temperature (°C)
91081_14
Fig. 14 - Power vs. Temperature Derating Curve
L
Vary tp to obtain
required IL
VGS = - 10 V
2.0
VDS
V DD
D.U.T.
tp
+
EC
Negative ID, Drain Current (A)
0.05 Ω
IL
1.6
VDD = 0.5 VDS
EC = 0.75 VDS
Fig. 15 - Clamped Inductive Test Circuit
1.2
0.8
VDD
0.4
IL
0.0
25
91081_13
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 13 - Maximum Drain Current vs. Case Temperature
S12-1558-Rev. D, 02-Jul-12
tp
VDS
EC
Fig. 16 - Clamped Inductive Waveforms
Document Number: 91081
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9610S, SiHF9610S
www.vishay.com
Vishay Siliconix
RD
VDS
QG
- 10 V
VGS
D.U.T.
Rg
QGS
+VDD
QGD
VG
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Charge
Fig. 17a - Switching Time Test Circuit
Fig. 18a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
td(on)
tr
td(off) tf
VGS
50 kΩ
12 V
0.2 µF
0.3 µF
10 %
-
D.U.T.
90 %
VDS
+ VDS
VGS
- 3 mA
IG
ID
Current sampling resistors
Fig. 17b - Switching Time Waveforms
S12-1558-Rev. D, 02-Jul-12
Fig. 18b - Gate Charge Test Circuit
Document Number: 91081
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9610S, SiHF9610S
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
+
• dV/dt controlled by Rg
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 19 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91081.
S12-1558-Rev. D, 02-Jul-12
Document Number: 91081
7
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
(Datum A)
3
A
4
4
L1
B
A
E
c2
H
Gauge
plane
4
0° to 8°
5
D
B
Detail A
Seating plane
H
1
2
C
3
C
L
L3
L4
Detail “A”
Rotated 90° CW
scale 8:1
L2
B
A1
B
A
2 x b2
c
2xb
E
0.010 M A M B
± 0.004 M B
2xe
Plating
5
b1, b3
Base
metal
c1
(c)
D1
4
5
(b, b2)
Lead tip
MILLIMETERS
DIM.
MIN.
MAX.
View A - A
INCHES
MIN.
4
E1
Section B - B and C - C
Scale: none
MILLIMETERS
MAX.
DIM.
MIN.
INCHES
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
D1
6.86
-
0.270
-
A1
0.00
0.25
0.000
0.010
E
9.65
10.67
0.380
0.420
6.22
-
0.245
-
b
0.51
0.99
0.020
0.039
E1
b1
0.51
0.89
0.020
0.035
e
b2
1.14
1.78
0.045
0.070
H
14.61
15.88
0.575
0.625
b3
1.14
1.73
0.045
0.068
L
1.78
2.79
0.070
0.110
2.54 BSC
0.100 BSC
c
0.38
0.74
0.015
0.029
L1
-
1.65
-
0.066
c1
0.38
0.58
0.015
0.023
L2
-
1.78
-
0.070
c2
1.14
1.65
0.045
0.065
L3
D
8.38
9.65
0.330
0.380
L4
0.25 BSC
4.78
5.28
0.010 BSC
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
www.vishay.com
1
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
www.vishay.com
1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
1
Document Number: 91000
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