IRF9620
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
S
• Dynamic dV/dt rating
TO-220AB
Available
• P-channel
• Fast switching
G
Available
• Ease of paralleling
• Simple drive requirements
G
D
S
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
P-Channel MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
-200
VGS = -10 V
22
Qgs (nC)
12
Qgd (nC)
10
Configuration
DESCRIPTION
1.5
Qg max. (nC)
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
Single
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
IRF9620PbF
Lead (Pb)-free and halogen-free
IRF9620PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-200
Gate-source voltage
VGS
± 20
Continuous drain current
VGS at -10 V
TC = 25 °C
TC = 100 °C
Pulsed srain current a
ID
IDM
Linear serating factor
Maximum power dissipation
Peak diode recovery dV/dt b
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
Mounting torque
For 10 s
6-32 or M3 screw
V
-3.5
-2.0
A
-14
0.32
TC = 25 °C
UNIT
W/°C
PD
40
W
dV/dt
-5.0
V/ns
TJ, Tstg
-55 to +150
300
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. ISD ≤ -3.5 A, dI/dt ≤ 95 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
c. 1.6 mm from case
S21-0867-Rev. C, 16-Aug-2021
Document Number: 91082
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9620
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum junction-to-ambient
RthJA
-
62
Case-to-sink, flat, greased surface
RthCS
0.50
-
Maximum junction-to-case (drain)
RthJC
-
3.1
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage
VDS
VGS = 0 V, ID = -250 μA
-200
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = -1 mA
-
-0.22
-
V/°C
VGS(th)
VDS = VGS, ID = -250 μA
-2.0
-
-4.0
V
Gate-source leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
VDS = -200 V, VGS = 0 V
-
-
-100
VDS = -160 V, VGS = 0 V, TJ = 125 °C
-
-
-500
Drain-source on-state resistance
Forward transconductance
μA
-
-
1.5
Ω
gfs
VDS = -50 V, ID = -1.5 A b
1.0
-
-
S
VGS = 0 V,
VDS = -25 V,
f = 1.0 MHz, see fig. 5
-
350
-
-
100
-
-
30
-
-
-
22
-
-
12
-
-
10
-
15
-
RDS(on)
ID = -1.5 A b
VGS = -10 V
Dynamic
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Rise time
Turn-off delay time
tr
td(off)
Fall time
tf
Gate input resistance
Rg
Internal drain inductance
LD
Internal source inductance
LS
VGS = -10 V
ID = -4.0 A, VDS = -160 V,
see fig. 11 and 18 b
pF
nC
VDD = -100 V, ID = -1.5 A,
Rg = 50 Ω, RD = 67 Ω, see fig. 17 b
-
25
-
-
20
-
-
15
-
f = 1 MHz, open drain
0.9
-
5.7
-
4.5
-
-
7.5
-
-
-
-3.5
-
-
-14
-
-
-7.0
V
-
300
450
ns
-
1.9
2.9
μC
Between lead,
6 mm (0.25") from
package and center of
die contact
D
ns
Ω
nH
G
S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulsed diode forward current a
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Forward turn-on time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = -3.5 A, VGS = 0 V b
TJ = 25 °C, IF = -3.5 A, dI/dt = 100 A/μs b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
S21-0867-Rev. C, 16-Aug-2021
Document Number: 91082
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9620
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
-5
-5
80 µs Pulse Test
VGS = - 10, - 9, - 8, - 7 V
-6V
-3
-2
-5V
VGS = - 10, - 9, - 8, - 7 V
-4
ID, Drain Current (A)
ID, Drain Current (A)
-4
-3
-6V
-2
-5V
-1
-1
80 µs Pulse Test
-4V
-4V
0
0
- 20
- 10
0
- 30
- 40
- 50
VDS, Drain-to-Source Voltage (V)
91082_01
TJ = 125 °C
-2
-1
80 µs Pulse Test
VDS > ID(on) x RDS(on) max.
0
-2
0
-4
-6
-8
2
100 µs
5
1 ms
2
1
10 ms
5
TC = 25 °C
TJ = 150 °C
Single Pulse
2
- 10
2
1
5
10
2
5
102
2
5
103
Negative VDS, Drain-to-Source Voltage (V)
91082_04
Fig. 2 - Typical Transfer Characteristics
ZthJC(t)/RthJC, Normalized Effective Transient
Thermal Impedence (Per Unit)
-5
10
0.1
VGS, Gate-to-Source Voltage (V)
91082_02
-4
Operation in this area limited
by RDS(on)
5
Negative ID, Drain Current (A)
ID, Drain Current (A)
102
TJ = 25 °C
-3
-3
Fig. 3 - Typical Saturation Characteristics
TJ = - 55 °C
-4
-2
VDS, Drain-to-Source Voltage (V)
91082_03
Fig. 1 - Typical Output Characteristics
-5
-1
0
Fig. 4 - Maximum Safe Operating Area
2.0
1.0
0.5
0.2
0.1
D = 0.5
PDM
0.2
0.1
t1
0.05
0.05
t2
0.02
0.01
Single Pulse (Transient
Thermal Impedence)
0.02
0.01
10-5
Notes:
1. Duty Factor, D = t1/t2
2. Per Unit Base = RthJC = 3.12 °C/W
3. TJM - TC = PDM ZthJC(t)
2
5
10-4
2
5
10-3
2
5
10-2
2
5
0.1
2
5
1.0
2
5
10
t1, Square Wave Pulse Duration (s)
91082_05
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
S21-0867-Rev. C, 16-Aug-2021
Document Number: 91082
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9620
www.vishay.com
RDS(on), Drain-to-Source On Resistance
(Normalized)
Vishay Siliconix
4.0
gfs,Transconductance (S)
80 µs Pulse Test
VDS > ID(on) x RDS(on) max.
3.2
TJ = - 55 °C
2.4
TJ = 25 °C
TJ = 125 °C
1.6
0.8
0.0
0
-1
-3
-4
-5
ID, Drain Current (A)
91082_06
2.0
1.5
1.0
0.5
0.0
- 40
0
40
80
120
160
TJ, Junction Temperature (°C)
Fig. 6 - Typical Transconductance vs. Drain Current
Fig. 9 - Normalized On-Resistance vs. Temperature
- 20
500
- 10
Ciss
400
-5
-2
TJ = 150 °C
- 1.0
TJ = 25 °C
- 0.5
300
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
C ,C
Coss = Cds + gs gd
Cgs + Cgd
Coss
200
≈ Cgs + Cgd
Crss
100
- 0.2
- 0.1
- 2.0
0
- 3.2
- 4.4
- 5.6
- 6.8
1.15
1.05
0.95
0.85
91082_08
0
40
80
120
160
TJ, Junction Temperature (°C)
Fig. 8 - Breakdown Voltage vs. Temperature
S21-0867-Rev. C, 16-Aug-2021
- 30
- 40
- 50
Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage
Negative VGS, Gate-to-Source Voltage (V)
1.25
- 20
VDS, Drain-to-Source Voltage (V)
91082_10
Fig. 7 - Typical Source-Drain Diode Forward Voltage
0.75
- 40
- 10
0
- 8.0
VSD, Source-to-Drain Voltage (V)
91082_07
BVDSS, Drain-to-Source Breakdown
Voltage (Normalized)
ID = - 1.0 A
VGS = - 10 V
91082_09
C, Capacitance (pF)
IDR, Reverse Drain Current (A)
-2
2.5
20
ID = - 3.5 A
VDS = - 100 V
VDS = - 60 V
16
VDS = - 40 V
12
8
4
For test circuit
see figure 18
0
0
91082_11
4
8
12
16
20
QG, Total Gate Charge (nC)
Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91082
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9620
www.vishay.com
5
L
RDS(on) measured with current
pulse of 2.0 µs duration. Initial
TJ = 25 °C. (Heating effect of
2.0 µs pulse is minimal.)
4
RDS(on), Drain-to-Source
On Resistance (Ω)
Vishay Siliconix
Vary tp to obtain
required IL
VGS = - 10 V
3
VGS = - 10 V
VDS
V DD
D.U.T.
tp
+
EC
0.05 Ω
IL
2
VDD = 0.5 VDS
VGS = - 20 V
EC = 0.75 VDS
Fig. 15 - Clamped Inductive Test Circuit
1
0
0
-4
-8
- 12
- 16
VDD
- 20
ID, Drain Current (A)
91082_12
IL
Fig. 12 - Typical On-Resistance vs. Drain Current
tp
3.5
VDS
Negative ID, Drain Current (A)
EC
3.0
Fig. 16 - Clamped Inductive Waveforms
2.5
2.0
RD
VDS
1.5
VGS
1.0
D.U.T.
RG
+VDD
0.5
- 10 V
0.0
25
50
75
100
125
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
150
TC, Case Temperature (°C)
91082_13
Fig. 13 - Maximum Drain Current vs. Case Temperature
Fig. 17a - Switching Time Test Circuit
40
td(on)
PD, Power Dissipation (W)
35
tr
td(off) tf
VGS
10 %
30
25
20
90 %
VDS
15
10
Fig. 17b - Switching Time Waveforms
5
0
0
91082_14
20
40
60
80
100
120
140
TC, Case Temperature (°C)
Fig. 14 - Power vs. Temperature Derating Curve
S21-0867-Rev. C, 16-Aug-2021
Document Number: 91082
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9620
www.vishay.com
Vishay Siliconix
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 15 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 18a - Basic Gate Charge Waveform
Fig. 18b - Gate Charge Test Circuit
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
+
• dV/dt controlled by Rg
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
Period
P.W.
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 19 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91082.
S21-0867-Rev. C, 16-Aug-2021
Document Number: 91082
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
C
b
e
J(1)
e(1)
MILLIMETERS
DIM.
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
J(1)
2.41
2.92
0.095
0.115
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
Document Number: 66542
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 04-Nov-2021
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000
工商网监
湘ICP备2023018690号
