IRF9640, SiHF9640
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
-200
RDS(on) ()
VGS = -10 V
0.50
Qg max. (nC)
44
Qgs (nC)
7.1
Qgd (nC)
27
Configuration
Single
S
Dynamic dV/dt rating
Available
Repetitive avalanche rated
P-channel
Available
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
TO-220AB
G
DESCRIPTION
G
D
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRF9640PbF
Lead (Pb)-free
SiHF9640-E3
IRF9640
SnPb
SiHF9640
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-200
V
Gate-Source Voltage
VGS
± 20
V
VGS at -10 V
Continuous Drain Current
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a
ID
UNIT
-11
-6.8
A
IDM
-44
1.0
W/°C
Single Pulse Avalanche Energy b
EAS
700
mJ
Repetitive Avalanche Current a
IAR
-11
A
EAR
13
mJ
PD
125
W
dV/dt
-5.0
V/ns
TJ, Tstg
-55 to +150
Linear Derating Factor
Repetitive Avalanche Energy
a
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
Mounting Torque
for 10 s
6-32 or M3 screw
300
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = -50 V, starting TJ = 25 °C, L = 8.7 mH, Rg = 25 , IAS = -11 A (see fig. 12).
c. ISD -11 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
S16-0754-Rev. C, 02-May-16
Document Number: 91086
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9640, SiHF9640
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = -250 μA
-200
-
-
V
VDS/TJ
Reference to 25 °C, ID = -1 mA
-
-0.2
-
V/°C
VGS(th)
VDS = VGS, ID = -250 μA
-2.0
-
-4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = -200 V, VGS = 0 V
-
-
-100
VDS = -160 V, VGS = 0 V, TJ = 125 °C
-
-
-500
μA
-
-
0.50
gfs
VDS = -50 V, ID = -6.6 A b
4.1
-
-
S
Input Capacitance
Ciss
1200
-
Coss
-
370
-
Reverse Transfer Capacitance
Crss
VGS = 0 V,
VDS = -25 V,
f = 1.0 MHz, see fig. 5
-
Output Capacitance
-
81
-
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
ID = -6.6 A b
VGS = -10 V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
pF
-
-
44
-
-
7.1
Qgd
-
-
27
td(on)
-
14
-
tr
-
43
-
-
39
-
-
38
-
-
4.5
-
-
7.5
-
0.3
-
1.7
-
-
-11
S
-
-
-44
TJ = 25 °C, IS = -11 A, VGS = 0 V b
-
-
-5
V
-
250
300
ns
-
2.9
3.6
μC
td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Gate Input Resistance
Rg
VGS = -10 V
ID = -11 A, VDS = -160 V,
see fig. 6 and 13 b
VDD = -100 V, ID = -11 A
Rg = 9.1 , RD = 8.6, see fig. 10 b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
nC
ns
nH
G
S
f = 1 MHz, open drain
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current a
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p -n junction diode
D
A
G
TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μs b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S16-0754-Rev. C, 02-May-16
Document Number: 91086
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9640, SiHF9640
www.vishay.com
Vishay Siliconix
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
- ID, Drain Current (A)
Top
101
- 4.5 V
20 µs Pulse Width
TC = 25 °C
100
100
101
- VDS, Drain-to-Source Voltage (V)
91086_01
RDS(on), Drain-to-Source On Resistance
(Normalized)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
ID = - 11 A
VGS = - 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
Fig. 4 - Normalized On-Resistance vs. Temperature
2400
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
2000
- 4.5 V
Capacitance (pF)
- ID, Drain Current (A)
Top
101
60 80 100 120 140 160
TJ, Junction Temperature (°C)
91086_04
Fig. 1 - Typical Output Characteristics, TC = 25 °C
20 40
1600
Ciss
1200
800
Coss
400
100
20 µs Pulse Width
TC = 150 °C
100
0
101
100
- VDS, Drain-to-Source Voltage (V)
91086_02
Crss
- VDS, Drain-to-Source Voltage (V)
91086_05
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
25 °C
101
100
20 µs Pulse Width
VDS = - 50 V
4
91086_03
5
6
7
8
9
- VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S16-0754-Rev. C, 02-May-16
- VGS, Gate-to-Source Voltage (V)
- ID, Drain Current (A)
20
150 °C
101
ID = - 11 A
VDS = - 160 V
16
VDS = - 100 V
VDS = - 40 V
12
8
4
For test circuit
see figure 13
0
10
0
91086_06
10
20
30
40
50
60
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
Document Number: 91086
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9640, SiHF9640
www.vishay.com
Vishay Siliconix
10
- ID, Drain Current (A)
- ISD, Reverse Drain Current (A)
12
101
25 °C
150 °C
100
6
4
2
VGS = 0 V
10-1
0.0
2.0
1.0
3.0
0
5.0
4.0
25
- VSD, Source-to-Drain Voltage (V)
91086_07
50
100
75
125
150
TC, Case Temperature (°C)
91086_09
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
RD
102
Operation in this area limited
by RDS(on)
5
- ID, Drain Current (A)
8
VDS
VGS
10 µs
D.U.T.
RG
+VDD
2
100 µs
- 10 V
10
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
1 ms
5
Fig. 10a - Switching Time Test Circuit
TC = 25 °C
TJ = 150 °C
Single Pulse
2
1
2
1
5
10
2
5
10 ms
102
2
5
VDS
10 %
103
td(on)
td(off) tf
tr
- VDS, Drain-to-Source Voltage (V)
91086_08
Fig. 8 - Maximum Safe Operating Area
90 %
VGS
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
1
D = 0.50
PDM
0.20
0.1
0.10
0.05
t1
t2
Single Pulse
(Thermal Response)
0.02
0.01
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
91086_11
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S16-0754-Rev. C, 02-May-16
Document Number: 91086
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9640, SiHF9640
www.vishay.com
Vishay Siliconix
IAS
L
VDS
RG
VDS
-
D.U.T
+ VDS
VDD
IAS
- 10 V
tp
tp
0.01 Ω
V(BR)DSS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Energy (mJ)
1600
ID
- 4.9 A
- 7.0 A
Bottom - 11 A
Top
1200
800
400
0
VDD = - 50 V
25
91086_12c
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
S16-0754-Rev. C, 02-May-16
Fig. 13b - Gate Charge Test Circuit
Document Number: 91086
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9640, SiHF9640
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
+
• dV/dt controlled by Rg
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91086.
S16-0754-Rev. C, 02-May-16
Document Number: 91086
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
DIM.
Q
H(1)
D
3
2
L(1)
1
M*
L
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
ØP
MILLIMETERS
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xi’an
Document Number: 66542
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 13-Jun-16
1
Document Number: 91000
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