IRF9Z20, SiHF9Z20
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
-50
RDS(on) ()
VGS = -10 V
Qg max. (nC)
0.28
26
Qgs (nC)
6.2
Qgd (nC)
8.6
Configuration
Single
S
DESCRIPTION
TO-220AB
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The P-channel power MOSFETs are designed for
application which require the convenience of reverse
polarity operation. They retain all of the features of the more
common N-channel power MOSFETs such as voltage
control, very fast switching, ease of paralleling, and
excellent temperature stability.
P-channel power MOSFETs are intended for use in power
stages where complementary symmetry with N-channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by
the reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.
G
G
D
P-channel versatility
Compact plastic package
Fast switching
Low drive current
Ease of paralleling
Excellent temperature stability
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
IRF9Z20PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-50
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a
ID
IDM
Linear Derating Factor
Inductive Current, Clamped
-9.7
-6.1
A
-39
0.32
W/°C
ILM
-39
A
IL
-2.2
A
TC = 25 °C
PD
40
W
TJ, Tstg
-55 to +150
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) c
V
L = 100 μH
Unclamped Inductive Current (Avalanche current)
Maximum Power Dissipation
UNIT
for 10 s
300
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. VDD = - 25 V, starting TJ = 25 °C, L =100 μH, Rg = 25
c. 0.063" (1.6 mm) from case.
S16-0015-Rev. C, 18-Jan-16
Document Number: 90121
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z20, SiHF9Z20
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
80
Case-to-Sink, Flat, Greased Surface
RthCS
1.0
-
Maximum Junction-to-Case (Drain)
RthJC
-
3.1
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = -250 μA
-50
-
-
V
Static
Drain-Source Breakdown Voltage
VGS(th)
VDS = VGS, ID = -250 μA
-2.0
-
-4.0
V
Gate-Source Leakage
Gate-Source Threshold Voltage
IGSS
VGS = ± 20 V
-
-
± 500
nA
Zero Gate Voltage Drain Current
IDSS
VDS = max. rating, VGS = 0 V
-
-
-250
VDS = max. rating x 0,8, VGS = 0 V, TJ =125°C
-
-
-1000
μA
-
0.20
0.28
gfs
VDS = 2 x VGS, IDS = -5.6 A b
2.3
3.5
-
S
Input Capacitance
Ciss
-
480
-
Output Capacitance
Coss
-
320
-
Reverse Transfer Capacitance
Crss
VGS = 0 V,
VDS = -25 V,
f = 1.0 MHz, see fig. 9
-
58
-
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
ID = -5.6 A b
VGS = -10 V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
VGS = -10 V
ID = -9.7 A, VDS = -0.8 max.
rating. see fig. 17
VDD = -25 V, ID = -9.7 A,
Rg = 18 , RD = 2.4, see fig. 16 (MOSFET
switching times are essentially independent
of operating temperature)
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
-
17
26
-
4.1
6.2
-
5.7
8.6
-
8.2
12
-
57
86
-
12
18
-
25
38
-
4.5
-
-
7.5
-
-
-
-9.7
-
-
-39
pF
nC
ns
nH
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
A
S
TJ = 25 °C, IS = - 9.7 A, VGS = 0 V b
TJ = 25 °C, IF = - 9.7 A, dI/dt = 100 A/μs b
-
-
-6.3
V
56
110
280
ns
0.17
0.34
0.85
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width 300 μs; duty cycle 2 %.
S16-0015-Rev. C, 18-Jan-16
Document Number: 90121
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z20, SiHF9Z20
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
VGS = - 10, - 8 V
103
80 µs Pulse Test
Negative ID, Drain Current (A)
Negative ID, Drain Current (A)
15
-7V
12
9
-6V
6
-5V
3
-4V
10
5
15
20
90121_01
100 µs
10
102
1
DC
TC = 25 °C
TJ = 150 °C
Single Pulse
5
2
5
2
10
5
102
Negative VDS, Drain-to-Source Voltage (V)
Fig. 4 - Maximum Safe Operating Area
5.0
gfs,Transconductance (S)
80 µs Pulse Test
VDS < - 50 V
2
10
5
2
1
5
TJ = 150 °C
2
10 ms
2
90121_04
80 µs Pulse Test
VDS = 2 x VGS
5
1 ms
IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22
5
1
Fig. 1 - Typical Output Characteristics
Negative ID, Drain Current (A)
10 µs
2
25
Negative VDS, Drain-to-Source Voltage (V)
TJ = 25 °C
4.0
TJ = 150 °C
3.0
2.0
1.0
TJ = 25 °C
0.0
0.1
0
2
4
6
8
Negative IDR, Reverse Drain Current (A)
-7V
9
-6V
6
-5V
3
-4V
0
0
1
2
3
4
Negative VDS, Drain-to-Source Voltage (V)
Fig. 3 - Typical Saturation Characteristics
S16-0015-Rev. C, 18-Jan-16
8
12
16
20
Fig. 5 - Typical Transconductance vs. Drain Current
-8V
VGS = - 10
12
4
Negative ID, Drain Current (A)
90121_06
Fig. 2 - Typical Transfer Characteristics
80 µs Pulse Test
0
10
Negative VGS, Gate-to-Source Voltage (V)
90121_02
Negative ID, Drain Current (A)
IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22
5
0.1
0
90121_03
2
102
2
0
15
Operation in this area limited
by RDS(on)
5
5
102
5
2
10
TJ = 150 °C
5
TJ = 25 °C
2
1
5
2
0.1
0
90121_07
2
4
6
8
10
Negative VSD, Source-to-Drain Voltage (V)
Fig. 6 - Typical Source-Drain Diode Forward Voltage
Document Number: 90121
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z20, SiHF9Z20
ID = 1 mA
1.15
1.05
0.95
0.85
0.75
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
90121_08
RDS(on), Drain-to-Source On Resistance
RDS(on), Drain-to-Source On Resistance
(Normalized)
2.4
1.8
1.2
0.6
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgs Cgd / (Cgs + Cgd)
≈ Cds + Cgd
C, Capacitance (pF)
800
600
Ciss
400
Coss
200
Crss
0
1
90121_10
2
5
10
2
5
8
4
For test circuit
see figure 17
0
0
8
16
24
32
40
QG, Total Gate Charge (nC)
2.0
80 µs Pulse Test
1.6
1.2
VGS = - 10 V
0.8
0.4
VGS = - 20 V
0.0
0
8
16
24
32
40
Negative ID, Drain Current (A)
Fig. 11 - Typical On-Resistance vs. Drain Current
10
8
IRF9Z20, SiHF9Z20
6
IRF9Z22, SiHF9Z22
4
2
0
102
Negative VDS, Drain-to-Source Voltage (V)
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
S16-0015-Rev. C, 18-Jan-16
VSD = - 40 V
12
90121_12
Fig. 8 - Normalized On-Resistance vs. Temperature
1000
16
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
90121_09
ID = - 9.7 A
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
ID = - 9.7 A
VGS = - 10 V
0.0
- 60 - 40 - 20 0
20
90121_11
Fig. 7 - Breakdown Voltage vs. Temperature
3.0
Negative VGS, Gate-to-Source Voltage (V)
1.25
Vishay Siliconix
Negative ID, Drain Current (A)
BVDSS, Drain-to-Source Breakdown
Voltage (Normalized)
www.vishay.com
25
90121_13
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 12 - Maximum Drain Current vs. Case Temperature
Document Number: 90121
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z20, SiHF9Z20
www.vishay.com
Vishay Siliconix
Fig. 13a - Unclamped Inductive Test Circuit
Fig. 13b - Unclamped Inductive Load Test Waveforms
Thermal Response (ZthJC)
10
D = 0.5
1
0.2
0.1
PDM
0.05
0.1
0.02
0.01
t1
Single Pulse
(Thermal Response)
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
10-4
90121_05
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Fig. 15 - Switching Time Test Circuit
S16-0015-Rev. C, 18-Jan-16
Fig. 16 - Gate Charge Test Circuit
Document Number: 90121
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z20, SiHF9Z20
www.vishay.com
Vishay Siliconix
Random Failure Rate (FIT)
14 V
1010
108
18 V
106
20 V
104
60 % UCL
103
0.1
90 % UCL
99 % UCL
102
10-2
20 FIT’s
10
10-3
1
102
50
70
90121_18
90
110
130
50
150
Temperature (°C)
Fig. 17 - Typical Time to Accumulated 1 % Gate Failure
90121_19
70
90
110
130
% Per 1000 Hours
16 V
Time (H)
1
104
1012
10-4
150
Temperature (°C)
Fig. 18 - Typical High Temperature Reverse Bias (HTRB)
Failure Rate
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90121.
S16-0015-Rev. C, 18-Jan-16
Document Number: 90121
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
C
b
e
J(1)
e(1)
MILLIMETERS
DIM.
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
J(1)
2.41
2.92
0.095
0.115
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
Document Number: 66542
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 04-Nov-2021
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2022
1
Document Number: 91000
