IRFB17N60K, SiHFB17N60K
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Smaller TO-220 Package
600
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
99
Qgs (nC)
32
Qgd (nC)
• Low Gate Charge Qg Results in Simple Drive
Requirement
0.35
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
47
Configuration
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
Single
D
• Lead (Pb)-free Available
TO-220
APPLICATIONS
• Switch Mode Power Supply (SMPS)
G
• Uninterruptible Power Supply
• High Speed Power Switching
S
G
D
• Hard Switched and High Frequency Circuits
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRFB17N60KPbF
SiHFB17N60K-E3
IRFB17N60K
SiHFB17N60K
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
UNIT
V
17
11
A
IDM
68
2.7
W/°C
EAS
330
mJ
Currenta
IAR
17
A
Repetitive Avalanche Energya
EAR
34
mJ
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
PD
340
W
dV/dt
11
V/ns
TJ, Tstg
- 55 to + 150
for 10 s
300d
6-32 or M3 screw
10
°C
N
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 2.3 mH, RG = 25 Ω, IAS = 17 A (see fig. 12).
c. ISD ≤ 17 A, dI/dt ≤ 380 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91099
S-81243-Rev. B, 21-Jul-08
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IRFB17N60K, SiHFB17N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
58
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
0.37
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 µA
600
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
600
-
mV/°C
VGS(th)
VDS = VGS, ID = 250 µA
3.0
-
5.0
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
-
-
50
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
250
µA
-
0.35
0.42
Ω
gfs
VDS = 50 V, ID = 10 A
5.9
-
-
S
Input Capacitance
Ciss
VGS = 0 V,
-
2700
-
Output Capacitance
Coss
VDS = 25 V,
-
240
-
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
-
21
-
-
2950
-
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
ID = 10 Ab
VGS = 10 V
Dynamic
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Coss
Coss eff.
VGS = 0 V
VDS = 1.0 V , f = 1.0 MHz
VGS = 0 V
VDS = 480 V , f = 1.0 MHz
-
67
-
VGS = 0 V
VDS = 0 V to 480 V
-
120
-
-
-
99
-
-
32
Qg
Qgs
VGS = 10 V
ID = 17 A, VDS = 480 V
Qgd
-
-
47
Turn-On Delay Time
td(on)
-
25
-
-
82
-
-
38
-
-
32
-
-
-
17
-
-
68
-
-
1.5
Rise Time
Fall Time
tr
td(off)
nC
see fig. 6 and 13
Gate-Drain Charge
Turn-Off Delay Time
pF
VDD = 300 V, ID = 17 A,
RG = 7.5 Ω, VGS = 10 V, see fig.
10b
tf
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 17 A, VGS = 0 Vb
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µsb
TJ = 125 °C, IF = 17 A, dI/dt = 100 A/µsb
V
-
520
780
ns
-
5620
8430
nC
-
580
870
ns
-
6470
9700
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating, pulse width limited by max. junction temperature.
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91099
S-81243-Rev. B, 21-Jul-08
IRFB17N60K, SiHFB17N60K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91099
S-81243-Rev. B, 21-Jul-08
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IRFB17N60K, SiHFB17N60K
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91099
S-81243-Rev. B, 21-Jul-08
IRFB17N60K, SiHFB17N60K
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
L
VDS
D.U.T
RG
IAS
20 V
tp
Driver
+
A
- VDD
IAS
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91099
S-81243-Rev. B, 21-Jul-08
A
Fig. 12b - Unclamped Inductive Waveforms
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IRFB17N60K, SiHFB17N60K
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91099
S-81243-Rev. B, 21-Jul-08
IRFB17N60K, SiHFB17N60K
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
•
•
•
•
RG
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
Driver gate drive
P.W.
+
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode
VDD
forward drop
Inductor curent
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91099.
Document Number: 91099
S-81243-Rev. B, 21-Jul-08
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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