IRFB20N50K, SiHFB20N50K
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Low Gate Charge Qg Results in Simple Drive
Requirement
500
RDS(on) (Ω)
VGS = 10 V
0.21
Qg (Max.) (nC)
110
Qgs (nC)
33
Qgd (nC)
54
Configuration
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
Single
• Low RDS(on)
D
TO-220
Available
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
G
• Uninterruptible Power Supply
• High Speed Power Switching
S
G
D
• Hard Switched and High Frequency Circuits
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRFB20N50KPbF
SiHFB20N50K-E3
IRFB20N50K
SiHFB20N50K
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
± 30
VGS at 10 V
Continuous Drain Current
TC = 25 °C
ID
TC = 100 °C
Pulsed Drain Currenta
UNIT
V
20
12
A
IDM
80
2.2
W/°C
EAS
330
mJ
Currenta
IAR
20
A
Repetitive Avalanche Energya
EAR
28
mJ
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche
TC = 25 °C
Maximum Power Dissipation
PD
280
W
dV/dt
6.9
V/ns
TJ, Tstg
- 55 to + 150
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
300d
6-32 or M3 screw
10
°C
N
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 °C, L = 1.6 mH, RG = 25 Ω, IAS = 20 A.
c. ISD ≤ 20 A, dI/dt ≤ 350 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91101
S-Pending-Rev. A, 11-Aug-08
WORK-IN-PROGRESS
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1
IRFB20N50K, SiHFB20N50K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
58
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
0.45
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 µA
500
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.61
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
3.0
-
5.0
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
-
-
50
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
µA
-
0.21
0.25
Ω
gfs
VDS = 50 V, ID = 12 A
11
-
-
S
Input Capacitance
Ciss
VGS = 0 V,
-
2870
-
Output Capacitance
Coss
VDS = 25 V,
-
320
-
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
-
34
-
-
3480
-
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
ID = 12 Ab
VGS = 10 V
Dynamic
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Coss
VDS = 1.0 V, f = 1.0 MHz
VGS = 0 V
Coss eff.
VDS = 400 V, f = 1.0 MHz
-
85
-
VDS = 0 V to 400 V
-
160
-
-
-
110
-
-
33
Qg
VGS = 10 V
ID = 20 A, VDS = 400 V
pF
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
-
54
Turn-On Delay Time
td(on)
-
22
-
-
74
-
-
45
-
-
33
-
-
-
20
S
-
-
80
TJ = 25 °C, IS = 20 A, VGS = 0 Vb
-
-
1.5
-
520
780
ns
-
5.3
8.0
µC
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
see fig. 6 and 13b
VDD = 250 V, ID = 20 A
RG = 7.5 Ω, VGS = 10 V, see fig.
10b
tf
nC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IF = 20 A, dI/dt = 100 A/µsb
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Pulse width ≤ 400 µs; duty cycle ≤ 2 %.
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Document Number: 91101
S-Pending-Rev. A, 11-Aug-08
IRFB20N50K, SiHFB20N50K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
100.0
VGS
Top 15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom 5.0 V
ID, Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
100
1
0.1
5.0V
T J = 150 °C
10.0
T J = 25 °C
1.0
0.1
20 µs Pulse Width
TJ = 25 °C
VDS = 50 V
0.01
20 ms Pulse width
0.0
0.1
1
10
100
5.0
1
5.0V
0.1
20 µs Pulse Width
TJ = 25 °C
9.0
10.0
I D = 20 A
1
10
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Document Number: 91101
S-Pending-Rev. A, 11-Aug-08
2.5
2.0
1.5
1.0
0.5
V GS = 10 V
0.01
0.1
8.0
3.0
rDS(on), Drain-to-Source On-Resistance
(normalised)
ID, Drain-to-Source Current (A)
3.5
VGS
Top 15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom 5.0 V
10
7.0
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
VDS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
100
6.0
100
0.0
- 60
- 40
- 20
0
20
40
60
80
100
120
140
160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFB20N50K, SiHFB20N50K
Vishay Siliconix
100000
100.0
C, Capacitance (pF)
10000
ISD, Reverse Drain Current (A)
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds
shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
100
Crss
TJ = 150 °C
10.0
1.0
TJ = 25 °C
10
VGS = 0 V
0.1
1
10
100
1000
0.2
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1.0
1.2
Operation in this area limited
by rDS(on)
VDS = 400 V
VDS = 250 V
VDS = 100 V
16
12
8
4
For test circuit
see figure 13
20
40
60
80
100
100
10
120
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100 µs
1 ms
1
0.1
0
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4
0.8
1000
?? ? ???
0
0.6
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID, Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
20
0.4
VSD, Source-to Drain Voltage (V)
TC = 25 °C
TJ = 150 °C
Single Pulse
1
10
10 ms
100
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91101
S-Pending-Rev. A, 11-Aug-08
IRFB20N50K, SiHFB20N50K
Vishay Siliconix
RD
VDS
20
VGS
D.U.T.
RG
16
+
ID, Drain Current (A)
- VDD
10 V
12
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
8
Fig. 10a - Switching Time Test Circuit
VDS
4
90 %
0
25
50
75
100
125
150
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
1
Thermal Response ( ZthJC)
D = 0.50
0.20
0.1
0.10
0.01
0.02
0.01
Single Pulse
(Thermal Response)
P DM
0.01
t1
t2
Notes:
1. Duty Factor D = t1/t2
2. Peak TJ = PDM x TthJC + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
tp
15 V
L
VDS
D.U.T
RG
IAS
20 V
tp
Driver
+
A
- VDD
A
A
IAS
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91101
S-Pending-Rev. A, 11-Aug-08
Fig. 12b - Unclamped Inductive Waveforms
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IRFB20N50K, SiHFB20N50K
Vishay Siliconix
600
ID
9.4 A
17 A
20A
EAS, Single Pulse Avalanche Energy (mJ)
Top
500
Bottom
400
300
200
100
0
25
50
75
100
125
150
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91101
S-Pending-Rev. A, 11-Aug-08
IRFB20N50K, SiHFB20N50K
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
•
•
•
•
RG
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
Driver gate drive
P.W.
+
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode
VDD
forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91101.
Document Number: 91101
S-Pending-Rev. A, 11-Aug-08
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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