IRFB9N65A
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Vishay Siliconix
Power MOSFET
FEATURES
D
• Low gate charge Qg results in simple drive
requirement
TO-220AB
• Improved gate, avalanche, and dynamic dV/dt
ruggedness
G
G
D
Available
• Fully characterized capacitance and avalanche voltage
and current
S
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
N-Channel MOSFET
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Available
650
VGS = 10 V
APPLICATIONS
0.93
Qg max. (nC)
48
• Switch mode power supply (SMPS)
Qgs (nC)
12
• Uninterruptible power supply
Qgd (nC)
19
Configuration
• High speed power switching
Single
TYPICAL SMPS TOPOLOGIES
• Single transistor flyback
• Single transistor forward
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
IRFB9N65APbF
Lead (Pb)-free and halogen-free
IRFB9N65APbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
650
Gate-source voltage
VGS
± 30
Continuous drain current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed drain current a
ID
UNIT
V
8.5
5.4
A
IDM
21
1.3
W/°C
Single pulse avalanche energy b
EAS
325
mJ
Repetitive avalanche current a
IAR
5.2
A
Repetitive avalanche energy a
EAR
16
mJ
Linear derating factor
Maximum power dissipation
TC = 25 °C
Peak diode recovery dV/dt c
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
Mounting torque
For 10 s
6-32 or M3 screw
PD
167
W
dV/dt
2.8
V/ns
TJ, Tstg
-55 to +150
300
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Starting TJ = 25 °C, L = 24 mH, Rg = 25 Ω, IAS = 5.2 A (see fig. 12)
c. ISD ≤ 5.2 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
S21-0868-Rev. D, 16-Aug-2021
Document Number: 91104
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IRFB9N65A
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THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum junction-to-ambient
RthJA
-
62
Case-to-sink, flat, greased surface
RthCS
0.50
-
Maximum junction-to-case (drain)
RthJC
-
0.75
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage
VDS
VGS = 0 V, ID = 250 μA
650
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA d
-
670
-
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-source leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
VDS = 650 V, VGS = 0 V
-
-
25
VDS = 520 V, VGS = 0 V, TJ = 125 °C
-
-
250
μA
-
-
0.93
Ω
gfs
VDS = 50 V, ID = 3.1 A
3.9
-
-
S
Input capacitance
Ciss
-
1417
-
Output capacitance
Coss
-
177
-
Reverse transfer capacitance
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
7.0
-
Output capacitance
Coss
-
1912
-
Drain-source on-state resistance
Forward transconductance
RDS(on)
ID = 5.1 A b
VGS = 10 V
Dynamic
Effective output capacitance
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Turn-off delay time
VGS = 0 V
Coss eff.
Total gate charge
Rise time
VDS = 1.0 V, f = 1.0 MHz
tr
td(off)
Fall time
tf
Gate input resistance
Rg
VGS = 10 V
VDS = 520 V, f = 1.0 MHz
-
48
-
VDS = 0 V to 520 V c
-
84
-
-
-
48
-
-
12
-
-
19
-
14
-
ID = 5.2 A, VDS = 400 V
see fig. 6 and 13 b
VDD = 325 V, ID = 5.2 A
Rg = 9.1 Ω,RD = 62 Ω,
see fig. 10 b
-
20
-
-
34
-
-
18
-
f = 1 MHz, open drain
0.5
-
3.3
-
-
5.2
-
-
21
pF
nC
ns
Ω
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulsed diode forward current a
Body diode voltage
IS
ISM
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Forward turn-on time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 5.2 A, VGS = 0
S
Vb
TJ = 25 °C, IF = 5.2 A, dI/dt = 100 A/μs b
-
-
1.5
V
-
493
739
ns
-
2.1
3.2
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS
d. Uses SiHFIB5N65A data and test conditions
S21-0868-Rev. D, 16-Aug-2021
Document Number: 91104
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IRFB9N65A
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
1
20µs PULSE WIDTH
4.5V TJ = 25 °C
0.1
0.1
1
10
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
4.0
100
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
10
4.5V
1
20µs PULSE WIDTH
TJ = 150 ° C
10
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
S21-0868-Rev. D, 16-Aug-2021
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
6.0
7.0
8.0
9.0
Fig. 3 - Typical Transfer Characteristics
TOP
0.1
5.0
VGS , Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
100
V DS = 100V
20µs PULSE WIDTH
ID = 5.2A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91104
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IRFB9N65A
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2000
100
ISD , Reverse Drain Current (A)
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
1600
C, Capacitance (pF)
Vishay Siliconix
Ciss
1200
Coss
800
400
Crss
0
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.2
A
1
10
100
1000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
0.8
1.0
1.2
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
ID = 5.2A
OPERATION IN THIS AREA LIMITED
BY RDS(on)
VDS = 520V
VDS = 325V
VDS = 130V
16
10us
ID , Drain Current (A)
VGS , Gate-to-Source Voltage (V)
0.6
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
20
V GS = 0 V
0.4
12
8
10
100us
1ms
1
10ms
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
QG , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S21-0868-Rev. D, 16-Aug-2021
0.1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91104
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IRFB9N65A
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Vishay Siliconix
RD
VDS
10.0
VGS
D.U.T.
RG
+
ID , Drain Current (A)
8.0
- VDD
10V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
6.0
Fig. 10a - Switching Time Test Circuit
4.0
VDS
90 %
2.0
0.0
25
50
75
100
125
150
10 %
VGS
TC , Case Temperature ( ° C)
t d(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
tr
t d(off) t f
Fig. 10b - Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
PDM
0.05
t1
0.02
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.01
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V DS
tp
15 V
L
VDS
D.U.T.
RG
IAS
20 V
tp
Driver
+
A
- VDD
A
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
S21-0868-Rev. D, 16-Aug-2021
A
I AS
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91104
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IRFB9N65A
EAS , Single Pulse Avalanche Energy (mJ)
www.vishay.com
Vishay Siliconix
800
TOP
BOTTOM
ID
2.3A
3.3A
5.2A
QG
600
10 V
QGS
400
Q GD
VG
Charge
200
Fig. 13a - Basic Gate Charge Waveform
0
25
50
75
100
125
Current regulator
Same type as D.U.T.
150
Starting TJ , Junction Temperature ( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
50 kΩ
12 V
0.2 µF
0.3 µF
V DSav , Avalanche Voltage (V)
800
D.U.T.
+
V
- DS
780
VGS
760
3 mA
740
Current sampling resistors
IG
ID
Fig. 13b - Gate Charge Test Circuit
720
700
A
0
1
2
3
4
5
6
I av , Avalanche Current (A)
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanche Current
S21-0868-Rev. D, 16-Aug-2021
Document Number: 91104
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFB9N65A
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Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91104.
S21-0868-Rev. D, 16-Aug-2021
Document Number: 91104
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Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
C
b
e
J(1)
e(1)
MILLIMETERS
DIM.
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
J(1)
2.41
2.92
0.095
0.115
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
Document Number: 66542
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 04-Nov-2021
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
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Document Number: 91000
