IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective Coss Specified
• Compliant to RoHS Directive 2002/95/EC
600
RDS(on) ()
VGS = 10 V
2.2
Qg (Max.) (nC)
23
Qgs (nC)
5.4
Qgd (nC)
11
Configuration
Single
D
I2PAK (TO-262)
D2PAK (TO-263)
APPLICATIONS
G
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
G
D
S
TYPICAL SMPS TOPOLOGIES
S
• Single Transistor Flyback
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D2PAK (TO-263)
D2PAK (TO-263)
D2PAK (TO-263)
I2PAK (TO-262)
SiHFBC30AS-GE3
SiHFBC30ASTRL-GE3a
SiHFBC30ASTRR-GE3a
SiHFBC30AL-GE3
IRFBC30ASPbF
IRFBC30ASTRLPbFa
IRFBC30ASTRRPbFa
IRFBC30ALPbF
SiHFBC30AS-E3
SiHFBC30ASTL-E3a
SiHFBC30ASTR-E3a
SiHFBC30AL-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta, e
ID
IDM
Linear Derating Factor
Energyb
UNIT
V
3.6
2.3
A
14
0.69
W/°C
mJ
EAS
290
Avalanche Currenta
IAR
3.6
A
Repetiitive Avalanche Energya
EAR
7.4
mJ
Single Pulse Avalanche
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
PD
74
W
dV/dt
7.0
V/ns
TJ, Tstg
- 55 to + 150
300d
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 46 mH, Rg = 25 , IAS = 3.6 A (see fig. 12).
c. ISD 3.6 A, dI/dt 170 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBC30A/SiHFBC30A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91109
S11-1052-Rev. C, 30-May-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
PARAMETER
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
1.7
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0, ID = 250 μA
600
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mAd
-
0.67
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.5
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
-
-
25
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = 2.2 Ab
VGS = 10 V
VDS = 50 V, ID = 2.2 A
μA
-
-
2.2
2.1
-
-
S
-
510
-
-
70
-
-
3.5
-
-
730
-
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Effective Output Capacitance
Coss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VDS = 1.0 V, f = 1.0 MHz
VGS = 0 V
Coss eff.
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 10 V
VDS = 480 V, f = 1.0 MHz
-
19
-
VDS = 0 V to 480 Vc
-
31
-
-
-
23
-
-
5.4
ID = 3.6 A, VDS = 480 V,
see fig. 6 and 13b
pF
nC
Gate-Drain Charge
Qgd
-
-
11
Turn-On Delay Time
td(on)
-
9.8
-
-
13
-
-
19
-
-
12
-
-
-
3.6
-
-
14
-
-
1.6
-
400
600
ns
-
1.1
1.7
μC
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VDD = 300 V, ID = 3.6 A,
Rg = 12 , RD = 82 , see fig. 10b, d
tf
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb,
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
d. Uses IRFBC30A/SiHFBC30A data and test conditions.
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Document Number: 91109
S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
0.1
4.5V
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.01
4.0
Fig. 1 - Typical Output Characteristics
I D , Drain-to-Source Current (A)
1
4.5V
20µs PULSE WIDTH
TJ = 150 ° C
1
10
Fig. 2 - Typical Output Characteristics
Document Number: 91109
S11-1052-Rev. C, 30-May-11
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VDS , Drain-to-Source Voltage (V)
6.0
7.0
8.0
9.0
Fig. 3 - Typical Transfer Characteristics
TOP
0.1
0.1
5.0
VGS , Gate-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
V DS = 50V
20µs PULSE WIDTH
ID = 3.6A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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This document is subject to change without notice.
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IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance(pF)
1000
Ciss
100
Coss
10
ISD , Reverse Drain Current (A)
100
10000
10
TJ = 150° C
TJ = 25 ° C
1
Crss
1
1
10
100
0.1
0.4
1000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
OPERATION IN THIS AREA LIMITED
BY RDS(on)
VDS = 480V
VDS = 300V
VDS = 120V
16
12
8
10us
10
100us
1
1ms
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
4
8
12
16
20
24
QG , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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1.2
100
ID = 3.6A
0
1.0
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID , Drain Current (A)
VGS , Gate-to-Source Voltage (V)
0.8
VSD ,Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
20
V GS = 0 V
0.6
0.1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91109
S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
RD
VDS
4.0
VGS
D.U.T.
ID , Drain Current (A)
Rg
+
- VDD
3.0
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
2.0
Fig. 10a - Switching Time Test Circuit
VDS
1.0
90 %
0.0
25
50
75
100
125
10 %
VGS
150
TC , Case Temperature ( ° C)
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
PDM
0.05
0.1
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
L
VDS
Rg
D.U.T.
IAS
20 V
tp
Driver
+
A
- VDD
IAS
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91109
S11-1052-Rev. C, 30-May-11
Fig. 12b - Unclamped Inductive Waveforms
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This document is subject to change without notice.
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IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
400
TOP
BOTTOM
ID
1.6A
2.3A
3.6A
300
200
100
740
V DSav , Avalanche Voltage ( V )
EAS , Single Pulse Avalanche Energy (mJ)
Vishay Siliconix
720
700
680
660
640
0.0
0
25
50
75
100
125
1.0
150
Starting TJ , Junction Temperature ( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
2.0
3.0
4.0
IAV , Avalanche Current ( A)
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanache Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91109
S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91109.
Document Number: 91109
S11-1052-Rev. C, 30-May-11
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
D2
12.19
12.70
0.480
0.500
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
Document Number: 71195
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 16-Jun-14
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
(Datum A)
3
A
4
4
L1
B
A
E
c2
H
Gauge
plane
4
0° to 8°
5
D
B
Detail A
Seating plane
H
1
2
C
3
C
L
L3
L4
Detail “A”
Rotated 90° CW
scale 8:1
L2
B
A1
B
A
2 x b2
c
2xb
E
0.010 M A M B
± 0.004 M B
2xe
Plating
5
b1, b3
Base
metal
c1
(c)
D1
4
5
(b, b2)
Lead tip
MILLIMETERS
DIM.
MIN.
MAX.
View A - A
INCHES
MIN.
4
E1
Section B - B and C - C
Scale: none
MILLIMETERS
MAX.
DIM.
MIN.
INCHES
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
D1
6.86
-
0.270
-
A1
0.00
0.25
0.000
0.010
E
9.65
10.67
0.380
0.420
6.22
-
0.245
-
b
0.51
0.99
0.020
0.039
E1
b1
0.51
0.89
0.020
0.035
e
b2
1.14
1.78
0.045
0.070
H
14.61
15.88
0.575
0.625
b3
1.14
1.73
0.045
0.068
L
1.78
2.79
0.070
0.110
2.54 BSC
0.100 BSC
c
0.38
0.74
0.015
0.029
L1
-
1.65
-
0.066
c1
0.38
0.58
0.015
0.023
L2
-
1.78
-
0.070
c2
1.14
1.65
0.045
0.065
L3
D
8.38
9.65
0.330
0.380
L4
0.25 BSC
4.78
5.28
0.010 BSC
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
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Package Information
Vishay Siliconix
I2PAK (TO-262) (HIGH VOLTAGE)
A
(Datum A)
E
B
c2
A
E
A
L1
Seating
plane
D1
D
C
L2
C
B
B
L
A
c
3 x b2
E1
A1
3xb
Section A - A
Base
metal
2xe
b1, b3
Plating
0.010 M A M B
c1
c
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
D
8.38
9.65
0.330
0.380
A1
2.03
3.02
0.080
0.119
D1
6.86
-
0.270
-
b
0.51
0.99
0.020
0.039
E
9.65
10.67
0.380
0.420
b1
0.51
0.89
0.020
0.035
E1
6.22
-
0.245
-
b2
1.14
1.78
0.045
0.070
e
b3
1.14
1.73
0.045
0.068
L
13.46
14.10
0.530
0.555
c
0.38
0.74
0.015
0.029
L1
-
1.65
-
0.065
c1
0.38
0.58
0.015
0.023
L2
3.56
3.71
0.140
0.146
c2
1.14
1.65
0.045
0.065
2.54 BSC
0.100 BSC
ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost
extremes of the plastic body.
3. Thermal pad contour optional within dimension E, L1, D1, and E1.
4. Dimension b1 and c1 apply to base metal only.
Document Number: 91367
Revision: 27-Oct-08
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AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
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Document Number: 91000
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